GaN on SiC

RF Power Amplification 101: Handling Non-Idealities

Oct 12, 2021
Share on FacebookShare on TwitterShare on LinkedInShare in an email
RF Power Amplification 101: Handling Non Idealities
Want more?
Need information?
Request Samples
Visit the Sample Center
Large Signal Models
Want more?
Need information?
Large Signal Models

More Articles

View All
Silicon Carbide

Summer Seminar Series 2021

Join Wolfspeed silicon carbide power experts for a five-week seminar series. Built with the design engineer in mind, the series covers a variety of topics from deciphering data sheets to designing with SiC. In addition to the deep-dive technical sessions, attendees will hear from Wolfspeed Co-Founder Dr. John Palmour as well as a panel of industry leaders.
View Now 
Jamming man-portable pack2
GaN on SiC

Countering RCIEDs with GaN’s Bandwidth & Power Density Advantages

Counter-RCIED devices used by the military and law enforcement rely on jamming wireless trigger signals. This article will discuss how GaN’s high-temperature reliability and power density capability enables jammer equipment to meet system SWaP-C requirements.
Continue Reading 
GaN on SiC

RF Power Amplification 101: Waveform Basics

RF power is delivered by the power amplifier (PA), the final stage of amplification before the antenna, with each application placing on the PA its own set of requirements in terms of frequency, bandwidth, load, power, efficiency, and linearity. This article is the first in a series that will discuss these considerations.
Continue Reading 
 Technical Articles
Wolfspeed Logo
  • Contact
  • Where to Buy
  • Document Library
  • Knowledge Center
  • News
  • Events
  • Privacy Policy
  • Terms of Use
Copyright © 2021 Wolfspeed, Inc.