CGH55015F2/P2

by Raymond S. Pengelly – William Pribble – Thomas Smith

This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site – the PA consumes the bulk of the dc power – generates the most heat – and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs – which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.

by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble

by Raymond S. Pengelly – Brad Millon – Donald Farrell – Bill Pribble – and Simon Wood

Presentation from the 2008 IEEE MTT-S International Microwave Symposium (IMS) Workshop on Challenges in Model-Based HPA DesignThis presentation discusses attributes of GaN HEMTs – Wolfspeed GaN HEMT models – design examples (Broadband CW Amplifiers and Linear WiMAX Amplifier) – and future model improvements.

by Rocco Giofrè; Paolo Colantonio; Franco Giannini; Luca Piazzon – In this letter – a new output combining network for the implementation of a Doherty Power Amplifier (DPA) is presented. The proposed topology simultaneously allows the active load modulation and the output matching – by adopting more realizable elements than the standard DPA – especially when high output power levels are required. The innovative design approach is demonstrated through a practical prototype realization based on GaN-HEMT devices. Experimental results have shown a 65%–48% efficiency at about 42–36 dBm output power with a gain compression lower than 1.5 dB from 1.95 to 2.25 GHz.

by S. Bensmida – K. Morris – J. Lees – P. Wright – J. Benedikt – P. J. Tasker – M. Beach – J. McGeehan – A new and simple Power Amplifier (PA) linearization method is proposed and demonstrated using a very high efficiency yet inherently nonlinear inverse class-F PA.

by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.

This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.

by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour

This paper reports the reliability performance of the Wolfspeed – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.

by R. Marante – L. Cabria – P. Cabral – J. C. Pedro – and J. A. García – In this paper – the impact of self heating on the linearity of a drain modulated GaN HEMT power amplifier (PA) is studied.

by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim

Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.

by Ahmed Sayed and Georg Boeck – This paper describes a two-stage 5-W broad-band amplifier covering the frequency range from 10 MHz to 2.4 GHz. The design procedure is given in detail – and the results are being discussed and compared with simulations.