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50V宽带应用场景

Wolfspeed GaN HEMT 器件非常适合超宽带放大器应用，并具有高击穿电压的特点。其高功率密度、低干扰和高截止频率 FT 的内在特性，使其支持瞬时带宽放大器的多倍频程。该系列产品包括出类拔萃的已封装分立式晶体管（工作电压 50 伏，输出功率 15 W 至 350 W [连续波CW]）和已封装50 欧姆 MMIC放大器（工作电压 50 伏，适合DC-6 GHz 应用）。该产品组合还包括分立式裸芯片和 MMIC 裸芯片，针对混合型放大器和多功能传输/接收模块而设计。

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产品SKU	新设计推荐？	技术	频率（最小值）	频率（最大值）	峰值输出功率	增益	效率	工作电压	类型	封装类型
CMPA0527005F	Yes	GaN on SiC	0.5 GHz	2.4 GHz	5 W	20 dB	47%	50 V	Packaged MMIC	Flange
CMPA0527005F-AMP1	Yes	GaN on SiC	0.5 GHz	2.7 GHz	5 W	20 dB	47%	50 V	Evaluation Board	Flange
CGHV27015S	Yes	GaN on SiC	DC	6 GHz	15 W	21 dB	32%	50 V	Packaged Discrete Transistor	Surface Mount
CMPA0060025F1-AMP	Yes	GaN on SiC	DC	6 GHz	25 W	17 dB	28%	50 V	Evaluation Board	Flange
CMPA0060025F1	Yes	GaN on SiC	DC	6 GHz	25 W	17 dB	28%	50 V	Packaged MMIC	Flange
CMPA0060025F-AMP	Yes	GaN on SiC	DC	6 GHz	25 W	17 dB	28%	50 V	Evaluation Board	Flange
CMPA0060025F	Yes	GaN on SiC	DC	6 GHz	25 W	17 dB	28%	50 V	Packaged MMIC	Flange
CMPA0060025D	Yes	GaN on SiC	DC	6 GHz	25 W	18 dB	33%	50 V	MMIC Bare Die	Die
CGHV27030S-AMP5	Yes	GaN on SiC	1.2 GHz	1.4 GHz	30 W	21 dB	32%	50 V	Evaluation Board	Surface Mount
CGHV27030S-AMP1	Yes	GaN on SiC	2.5 GHz	2.7 GHz	30 W	21 dB	32%	50 V	Evaluation Board	Surface Mount
CGHV27030S	Yes	GaN on SiC	DC	6 GHz	30 W	21 dB	32%	50 V	Packaged Discrete Transistor	Surface Mount
CGHV40030F	Yes	GaN on SiC	DC	6 GHz	30 W	16 dB	70%	50 V	Packaged Discrete Transistor	Flange
CGHV40030F-AMP2	Yes	GaN on SiC	0.5 GHz	2.7 GHz	30 W	16 dB	70%	50 V	Evaluation Board	Flange
CGHV40030P	Yes	GaN on SiC	DC	6 GHz	30 W	16 dB	70%	50 V	Packaged Discrete Transistor	Pill
CGHV27030S-AMP4	Yes	GaN on SiC	1.8 GHz	2.2 GHz	30 W	21 dB	32%	50 V	Evaluation Board	Surface Mount
CGHV27030S-AMP3	Yes	GaN on SiC	1.8 GHz	2.2 GHz	30 W	21 dB	32%	28 V	Evaluation Board	Surface Mount
CGHV27030S-AMP2	Yes	GaN on SiC	2.5 GHz	2.7 GHz	30 W	21 dB	32%	28 V	Evaluation Board	Surface Mount
CGHV60040D-GP4	Yes	GaN on SiC	DC	6 GHz	40 W		65%	50 V	Discrete Bare Die	Die
CGHV40050F-AMP	Yes	GaN on SiC	0.8 GHz	2 GHz	50 W	16 dB	53%	50 V	Evaluation Board	Flange
CGHV40050F	Yes	GaN on SiC	DC	4 GHz	50 W	16 dB	53%	50 V	Packaged Discrete Transistor	Flange
CGHV40050P	Yes	GaN on SiC	DC	4 GHz	50 W	16 dB	53%	50 V	Packaged Discrete Transistor	Pill
CGHV35060MP	Yes	GaN on SiC	2.7 GHz	3.8 GHz	60 W	14.5 dB	67%	50 V	Packaged Discrete Transistor	Plastic
CGHV27060MP	Yes	GaN on SiC	DC	2.7 GHz	60 W	16.5 dB	64%	50 V	Packaged Discrete Transistor	Plastic
CGHV27060MP-AMP3	Yes	GaN on SiC	0.8 GHz	2.7 GHz	60 W	16.5 dB	55%	50 V	Evaluation Board	Plastic
CGHV27060MP-AMP1	Yes	GaN on SiC	2.5 GHz	2.7 GHz	60 W	16.5 dB	64%	50 V	Evaluation Board	Plastic
CGHV27060MP-AMP4	Yes	GaN on SiC	DC	1 GHz	60 W	16.5 dB	60%		Evaluation Board	Plastic
CGHV60075D5-GP4	Yes	GaN on SiC	DC	6 GHz	75 W	>7 dB	65%	50 V	Discrete Bare Die	Die
CG2H30070F-AMP2	Yes	GaN on SiC	0.5 GHz	3 GHz	80 W	15 dB	55%	28 V	Evaluation Board	Flange
CG2H30070F	Yes	GaN on SiC	0.5 GHz	3 GHz	80 W	15 dB	55%	28 V	Packaged Discrete Transistor	Flange
CGHV40100F-AMP	Yes	GaN on SiC	0.5 GHz	2.5 GHz	100 W	17.5 dB	55%	50 V	Evaluation Board	Flange
CGHV40100F	Yes	GaN on SiC	DC	3 GHz	100 W	17.5 dB	55%	50 V	Packaged Discrete Transistor	Flange
CGHV40100P-AMP	Yes	GaN on SiC	0.5 GHz	2.5 GHz	100 W	17.5 dB	55%	50 V	Evaluation Board	Pill
CGHV40100P	Yes	GaN on SiC	DC	3 GHz	100 W	17.5 dB	55%	50 V	Packaged Discrete Transistor	Pill
CGHV60170D-GP4	Yes	GaN on SiC	DC	6 GHz	170 W	17 dB	65%	50 V	Discrete Bare Die	Die
CGHV40180F-AMP3	Yes	GaN on SiC	0.96 GHz	1.25 GHz	200 W	24 dB	70%	28 V / 50 V	Evaluation Board	Flange
CGHV40180F	Yes	GaN on SiC	DC	2 GHz	200 W	24 dB	70%	28 V / 50 V	Packaged Discrete Transistor	Flange
CGHV40180P	Yes	GaN on SiC	DC	2 GHz	200 W	24 dB	70%	28 V / 50 V	Packaged Discrete Transistor	Pill
CGHV40200PP	Yes	GaN on SiC	DC	3 GHz	250 W	21 dB	75%	50 V	Packaged Discrete Transistor	Push-Pull
PTVA042502FC-V1	Yes	LDMOS	0.47 GHz	0.806 GHz	250 W	19 dB	26%	50 V	Packaged Discrete Transistor	Earless
PTVA042502EC-V1	Yes	LDMOS	0.47 GHz	0.806 GHz	250 W	19 dB	26%	50 V	Packaged Discrete Transistor	Bolt Down
CGHV40200PP-AMP1	Yes	GaN on SiC	1.7 GHz	1.9 GHz	250 W	21 dB	75%	50 V	Evaluation Board	Push-Pull
CGHV40320D-GP4	Yes	GaN on SiC	DC	4 GHz	320 W	19 dB	65%	50 V	Discrete Bare Die	Die
PTVA043502FC-V1	Yes	LDMOS	DC	1.35 GHz	350 W	18 dB	30%	50 V	Packaged Discrete Transistor	Earless
PTVA043502EC-V1	Yes	LDMOS	DC	1.35 GHz	350 W	18 dB	30%	50 V	Packaged Discrete Transistor	Bolt Down

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50V宽带应用场景

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