Features
- Input matched
- Typical Pulsed CW performance; 960 – 1215 MHz; 50 V; single side; 128 μs pulse width; 10% duty cycle; Output power at P3dB = 1400 W; Efficiency = 68%; Gain = 17 dB
- Pb-free and RoHS compliant
GTVA101K4
High Power RF GaN on SiC HEMT 1400 W; 50 V; 0.96 - 1.4 GHz
The GTVA101K4 is a GaN on SiC high electron mobility transistor (HEMT) designed specifically with high efficiency; high gain and wide bandwidth capabilities. This makes the GTVA101K4 ideal for applications in the 0.96 – 1.4 GHz frequency band. The transistor could be utilized for band-specific applications ranging from UHF through 1.4 GHz.
Products
GTVA101K4
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GTVA101K4
Product SKU | Buy Online | Data Sheet | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
GTVA101K42EV-V1 | Yes | GaN on SiC | 0.96 GHz | 1.4 GHz | 1400 W | 17 dB | 68% | 50 V | Packaged Discrete Transistor | Bolt Down | ||
LTN/GTVA101K42EV-V1 | Yes | GaN on SiC | 0.96 GHz | 1.4 GHz | 1400 W | 17 dB | 68% | 50 V | Packaged Discrete Transistor | Bolt Down |
Applications
- Radar Amplifiers
Documents, Tools & Support
- Technical & Sales Documents
- Tools & Support
- Compliance
Documents
Document Type | Document Name |
|---|---|
| Data Sheets | |
| Product Catalog | |
| Sales Terms |
Knowledge Center
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