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GTVA101K4

High Power RF GaN on SiC HEMT 1400 W; 50 V; 0.96 - 1.4 GHz
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The GTVA101K4 is a GaN on SiC high electron mobility transistor (HEMT) designed specifically with high efficiency; high gain and wide bandwidth capabilities. This makes the GTVA101K4 ideal for applications in the 0.96 – 1.4 GHz frequency band. The transistor could be utilized for band-specific applications ranging from UHF through 1.4 GHz.

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Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
GTVA101K42EV-V1
Yes
GaN on SiC
0.96 GHz
1.4 GHz
1400 W
17 dB
68%
50 V
Packaged Discrete Transistor
Bolt Down
LTN/GTVA101K42EV-V1
Yes
GaN on SiC
0.96 GHz
1.4 GHz
1400 W
17 dB
68%
50 V
Packaged Discrete Transistor
Bolt Down
Features
  • Input matched
  • Typical Pulsed CW performance; 960 – 1215 MHz; 50 V; single side; 128 μs pulse width; 10% duty cycle; Output power at P3dB = 1400 W; Efficiency = 68%; Gain = 17 dB
  • Pb-free and RoHS compliant
Applications
  • Radar Amplifiers
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Knowledge Center

RF
|
Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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