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GTVA101K4

GTVA101K4

High Power RF GaN on SiC HEMT 1400 W; 50 V; 0.96 - 1.4 GHz
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The GTVA101K4 is a GaN on SiC high electron mobility transistor (HEMT) designed specifically with high efficiency; high gain and wide bandwidth capabilities. This makes the GTVA101K4 ideal for applications in the 0.96 – 1.4 GHz frequency band. The transistor could be utilized for band-specific applications ranging from UHF through 1.4 GHz.

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Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
GTVA101K42EV-V1
Yes
GaN on SiC
0.96 GHz
1.4 GHz
1400 W
17 dB
68%
50 V
Packaged Discrete Transistor
Bolt Down
LTN/GTVA101K42EV-V1
Yes
GaN on SiC
0.96 GHz
1.4 GHz
1400 W
17 dB
68%
50 V
Packaged Discrete Transistor
Bolt Down
Features
  • Input matched
  • Typical Pulsed CW performance; 960 – 1215 MHz; 50 V; single side; 128 μs pulse width; 10% duty cycle; Output power at P3dB = 1400 W; Efficiency = 68%; Gain = 17 dB
  • Pb-free and RoHS compliant
Applications
  • Radar Amplifiers
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RF
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Radar / Avionics

Improving Pulse Fidelity in RF Power Amplifiers

A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
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