Features
- 0.5 – 3.0 GHz Application Circuit
- 85 W POUT typical at 28 V
- 10 dB Power Gain
- 58% Drain Efficiency
- Internally Matched
CG2H30070
70-W; 0.5-3.0 GHz; GaN HEMT
Wolfspeed’s CG2H30070F is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT). It has an input match to deliver the best possible instantaneous broadband performance from 0.5-3.0 GHz. GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This device is available in a 2-lead metal/ceramic flanged package for optimal electrical and thermal performance.
Products
CG2H30070
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CG2H30070
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CG2H30070F-AMP2 | Yes | GaN on SiC | 0.5 GHz | 3 GHz | 80 W | 15 dB | 55% | 28 V | Evaluation Board | Flange | ||||
CG2H30070F | Yes | GaN on SiC | 0.5 GHz | 3 GHz | 80 W | 15 dB | 55% | 28 V | Packaged Discrete Transistor | Flange |
Applications
- Broadband Amplifiers
- Electronic Counter Measures
- Signal Jamming
- Milcom
- Radar
- Data Link
Documents, Tools & Support
- Technical & Sales Documents
- Tools & Support
- Compliance
Documents
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Document Type | Document Name |
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| Design Files | |
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| Application Notes | |
| Application Notes | |
| Application Notes | |
| Application Notes | |
| Data Sheets | |
| Technical Papers & Articles | by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
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| Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Wolfspeed – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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| Technical Papers & Articles | by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
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| Product Catalog | |
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Knowledge Center
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