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CG2H30070

Wolfspeed CG2H30070 RF flange package
70-W; 0.5-3.0 GHz; GaN HEMT
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Wolfspeed’s CG2H30070F is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT). It has an input match to deliver the best possible instantaneous broadband performance from 0.5-3.0 GHz. GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This device is available in a 2-lead metal/ceramic flanged package for optimal electrical and thermal performance.

Products

CG2H30070

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CG2H30070

Product SKU
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Data Sheet
CAD Model
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CG2H30070F-AMP2
Yes
GaN on SiC
0.5 GHz
3 GHz
80 W
15 dB
55%
28 V
Evaluation Board
Flange
CG2H30070F
Yes
GaN on SiC
0.5 GHz
3 GHz
80 W
15 dB
55%
28 V
Packaged Discrete Transistor
Flange
Features
  • 0.5 – 3.0 GHz Application Circuit
  • 85 W POUT typical at 28 V
  • 10 dB Power Gain
  • 58% Drain Efficiency
  • Internally Matched
Applications
  • Broadband Amplifiers
  • Electronic Counter Measures
  • Signal Jamming
  • Milcom
  • Radar
  • Data Link

Documents, Tools & Support

Documents

Document Type
Document Name
Application Notes
Application Notes
Application Notes
Application Notes
Design Files
Design Files
Data Sheets
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Wolfspeed – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Technical Papers & Articles
by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
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Knowledge Center

RF
|
Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Continue Reading  Technical Articles

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