Skip to Main Content
Contact
浏览产品 (中文)

CGHV35120F

120-W; 2.9 - 3.8 GHz; 50 V; GaN HEMT for S-Band Radar Systems

Wolfspeed’s CGHV35120F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) designed specifically for high efficiency; high gain; and wide bandwidth capabilities; which makes CGHV35120F ideal for 2.9 – 3.8 GHz Radar amplifier applications. The transistor is supplied in a ceramic/metal flange package.

Product SKU
Buy Online
Data Sheet
CAD Model
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGHV35120F
Yes
GaN on SiC
3.1 GHz
3.5 GHz
120 W
12.8 dB
62%
50 V
Packaged Discrete Transistor
Flange
Features
  • Rated Power = 120 W @ TCASE = 85°C
  • Operating Frequency = 2.9 – 3.8 GHz
  • Transient 100 μsec – 300 μsec @ 20% Duty Cycle
  • 13 dB Power Gain @ TCASE = 85°C
  • 62% Typical Drain Efficiency @ TCASE = 85°C
  • Input Matched
  • <0.3 dB Pulsed Amplitude Droop
Applications
  • S-Band Radar Amplifiers
Apply Filters
Document Type
Document Name
Application Notes
Data Sheets
Design Files
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Wolfspeed – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Technical Papers & Articles
by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
Product Catalog
Sales Terms
Need information?
Buy Online
Find a Distributor
Stay Informed

Knowledge Center

RF
|
Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
Continue Reading 
 Technical Articles

Footer

Wolfspeed Logo

Social Media

  • Facebook
  • Twitter
  • LinkedIn
  • YouTube
Copyright © 2022 Wolfspeed, Inc.