Features
- 3.3 – 3.8 GHz Operation
- 525 W Typical Output Power
- 11.5 dB Power Gain
- 55% Typical Drain Efficiency
- 50 Ohm Internally Matched
- <0.3 dB Pulsed Amplitude Droop
CGHV37400F
400-W; 3300 – 3700-MHz; 50-Ohm Input/Output Matched; GaN HEMT for S-Band Radar Systems
Wolfspeed’s CGHV37400F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency; high gain and wide bandwidth capabilities; which makes the CGHV37400F ideal for 3.3 – 3.7 GHz S-Band radar amplifier applications. The transistor is matched to 50-ohms on the input and 50-ohms on the output. The CGHV37400 is based on Wolfspeed’s high power density 50 V; 0.4 µm GaN on silicon carbide (SiC) foundry process. The transistor is supplied in a ceramic/metal flange package.
Products
CGHV37400F
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CGHV37400F
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CGHV37400F | Yes | GaN on SiC | 3.3 GHz | 3.7 GHz | 550 W | 14 dB | 55% | 48 V | Packaged Discrete Transistor | Flange |
Applications
- S-Band Radar Amplifiers
Documents, Tools & Support
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Documents
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Document Type | Document Name |
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| Design Files | |
| Data Sheets | |
| Technical Papers & Articles | by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
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| Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Wolfspeed – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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| Technical Papers & Articles | by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
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| Product Catalog | |
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