Features
- 34 dB Small Signal Gain
- 85 W Typical PSAT
- Operation up to 50 V
- High Breakdown Voltage
- High Temperature Operation
CMPA2738060
80 W; 2.7 - 3.8 GHz; GaN MMIC; Power Amplifier
Wolfspeed's CMPA2738060 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved. This MMIC enables extremely wide bandwidths to be achieved in a small footprint screw-down package.
Products
CMPA2738060
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CMPA2738060
Product SKU | Buy Online | Data Sheet | CAD Model | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CMPA2738060F-AMP | Yes | GaN on SiC | 2.7 GHz | 3.8 GHz | 80 W | 34 dB | 54% | 50 V | Evaluation Board | Flange | |||
CMPA2738060F | Yes | GaN on SiC | 2.7 GHz | 3.8 GHz | 80 W | 34 dB | 54% | 50 V | Packaged MMIC | Flange |
Applications
- Civil and Military Pulsed Radar Amplifiers
Documents, Tools & Support
- Technical & Sales Documents
- Tools & Support
- Compliance
Documents
Document Type | Document Name |
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| Application Notes | |
| Application Notes | |
| Application Notes | |
| Application Notes | |
| Design Files | |
| Design Files | |
| Data Sheets | |
| Technical Papers & Articles | by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
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| Technical Papers & Articles | by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
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| Technical Papers & Articles | by Simon M. Wood – Ulf Andre – Bradley J. Millon – and Jim Milligan – This paper presents the design – development and characterization of three products for S-Band Radar applications. These products include two 240 Watt hybrid power transistors and a fully integrated 75 Watt packaged MMIC.
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| Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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| Product Catalog | |
| Sales Terms |
Knowledge Center
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Wolfspeed RF GaN meets 5G demands on PA design
Wolfspeed GaN on SiC products can replace inefficient silicon parts in 5G cellular transmitter amplifiers, achieving higher linearization, greater power density and improved thermal conductivity.
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Improving Pulse Fidelity in RF Power Amplifiers
A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
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