Features
- 34 dB Small Signal Gain
- 85 W Typical PSAT
- Operation up to 50 V
- High Breakdown Voltage
- High Temperature Operation
CMPA2738060
80 W; 2.7 - 3.8 GHz; GaN MMIC; Power Amplifier
Wolfspeed’s CMPA2738060 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved. This MMIC enables extremely wide bandwidths to be achieved in a small footprint screw-down package.
Products
CMPA2738060
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CMPA2738060
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CMPA2738060F-AMP | Yes | GaN on SiC | 2.7 GHz | 3.8 GHz | 80 W | 34 dB | 54% | 50 V | Evaluation Board | Flange | ||||
CMPA2738060F | Yes | GaN on SiC | 2.7 GHz | 3.8 GHz | 80 W | 34 dB | 54% | 50 V | Packaged MMIC | Flange |
Applications
- Civil and Military Pulsed Radar Amplifiers
Documents, Tools & Support
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Documents
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| Design Files | |
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| Technical Papers & Articles | by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
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| Technical Papers & Articles | by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
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| Technical Papers & Articles | by Simon M. Wood – Ulf Andre – Bradley J. Millon – and Jim Milligan – This paper presents the design – development and characterization of three products for S-Band Radar applications. These products include two 240 Watt hybrid power transistors and a fully integrated 75 Watt packaged MMIC.
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| Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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Knowledge Center
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