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RF

Satellite Communications

Wolfspeed offers high-efficiency and high-gain GaN on SiC components that support satellite communications delivering full video bandwidth for multi-carrier streaming - the fastest bits/sec per MHz. These components also offer outstanding thermal properties; by dissipating heat energy more efficiently, GaN on SiC operates at lower temperatures. With a portfolio that spans RF functionality and showcases the industry's highest reliability, Wolfspeed is the partner of choice in helping develop next-generation satcom solutions.
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Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CMPA1D1E025F-AMP
Yes
GaN on SiC
13.5 GHz
14.5 GHz
25 W
26 dB
16%
40 V
Evaluation Board
Flange
Yes
GaN on SiC
13.5 GHz
14.5 GHz
25 W
26 dB
16%
40 V
Packaged MMIC
Flange
Yes
GaN on SiC
5.5 GHz
8.5 GHz
30 W
25 dB
30%
28 V
Evaluation Board
Flange
Yes
GaN on SiC
5.5 GHz
8.5 GHz
30 W
25 dB
30%
28 V
Packaged MMIC
Flange
Yes
GaN on SiC
5.5 GHz
8.5 GHz
30 W
30 dB
44%
28 V
MMIC Bare Die
Die
Yes
GaN on SiC
13.75 GHz
14.5 GHz
30 W
26 dB
25%
40 V
MMIC Bare Die
Die
Yes
GaN on SiC
7.9 GHz
8.4 GHz
50 W
>13 dB
33%
40 V
Evaluation Board
Flange
Yes
GaN on SiC
7.9 GHz
8.4 GHz
50 W
>13 dB
33%
40 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
12.7 GHz
13.25 GHz
65 W
26 dB
30%
40 V
MMIC Bare Die
Die
No
GaN on SiC
12.75 GHz
13.25 GHz
90 W
25 dB
30%
40 V
Packaged MMIC
Flange
Yes
GaN on SiC
4.4 GHz
5 GHz
200 W
11.5 dB
33%
40 V
Evaluation Board
Flange
Yes
GaN on SiC
4.4 GHz
5 GHz
200 W
11.5 dB
33%
40 V
Packaged Discrete Transistor
Flange

Knowledge Center

RF
|
Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
Continue Reading 
 Technical Articles

Improving Pulse Fidelity in RF Power Amplifiers

A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
Continue Reading 
 Technical Articles

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