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Satellite Communications

Wolfspeed offers high-efficiency and high-gain GaN on SiC components that support satellite communications delivering full video bandwidth for multi-carrier streaming - the fastest bits/sec per MHz. These components also offer outstanding thermal properties; by dissipating heat energy more efficiently, GaN on SiC operates at lower temperatures. With a portfolio that spans RF functionality and showcases the industry's highest reliability, Wolfspeed is the partner of choice in helping develop next-generation satcom solutions.
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Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CMPA1D1E025F-AMP
Yes
GaN on SiC
13.5 GHz
14.5 GHz
25 W
26 dB
NA
40 V
Evaluation Board
Flange
Yes
GaN on SiC
13.5 GHz
14.5 GHz
25 W
26 dB
16%
40 V
Packaged MMIC
Flange
Yes
GaN on SiC
5.5 GHz
8.5 GHz
30 W
25 dB
NA
28 V
Evaluation Board
Flange
Yes
GaN on SiC
5.5 GHz
8.5 GHz
30 W
25 dB
30%
28 V
Packaged MMIC
Flange
Yes
GaN on SiC
5.5 GHz
8.5 GHz
30 W
30 dB
44%
28 V
MMIC Bare Die
Die
Yes
GaN on SiC
13.75 GHz
14.5 GHz
30 W
26 dB
25%
40 V
MMIC Bare Die
Die
Yes
GaN on SiC
7.9 GHz
8.4 GHz
50 W
>13 dB
NA
40 V
Evaluation Board
Flange
Yes
GaN on SiC
7.9 GHz
8.4 GHz
50 W
>13 dB
33%
40 V
Packaged Discrete Transistor
Flange
CMPA1H1J050F-AMP
New
Yes
GaN on SiC
60 W
28 dB
32%
28 V
Evaluation Board
Flange
Yes
GaN on SiC
60 W
28 dB
32%
28 V
Packaged MMIC
Flange
Yes
GaN on SiC
12.7 GHz
13.25 GHz
65 W
26 dB
30%
40 V
MMIC Bare Die
Die
Yes
GaN on SiC
13.25 GHz
90 W
25 dB
40 V
Packaged MMIC
Flange
Yes
GaN on SiC
4.4 GHz
5 GHz
200 W
11.5 dB
NA
40 V
Evaluation Board
Flange
Yes
GaN on SiC
4.4 GHz
5 GHz
200 W
11.5 dB
33%
40 V
Packaged Discrete Transistor
Flange
Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
Yes
GaN on SiC
13.5 GHz
14.5 GHz
25 W
26 dB
NA
40 V
Evaluation Board
Flange
Yes
GaN on SiC
13.5 GHz
14.5 GHz
25 W
26 dB
16%
40 V
Packaged MMIC
Flange
Yes
GaN on SiC
5.5 GHz
8.5 GHz
30 W
25 dB
NA
28 V
Evaluation Board
Flange
Yes
GaN on SiC
5.5 GHz
8.5 GHz
30 W
25 dB
30%
28 V
Packaged MMIC
Flange
Yes
GaN on SiC
5.5 GHz
8.5 GHz
30 W
30 dB
44%
28 V
MMIC Bare Die
Die
Yes
GaN on SiC
13.75 GHz
14.5 GHz
30 W
26 dB
25%
40 V
MMIC Bare Die
Die
Yes
GaN on SiC
7.9 GHz
8.4 GHz
50 W
>13 dB
NA
40 V
Evaluation Board
Flange
Yes
GaN on SiC
7.9 GHz
8.4 GHz
50 W
>13 dB
33%
40 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
60 W
28 dB
32%
28 V
Evaluation Board
Flange
Yes
GaN on SiC
60 W
28 dB
32%
28 V
Packaged MMIC
Flange
Yes
GaN on SiC
12.7 GHz
13.25 GHz
65 W
26 dB
30%
40 V
MMIC Bare Die
Die
Yes
GaN on SiC
13.25 GHz
90 W
25 dB
40 V
Packaged MMIC
Flange
Yes
GaN on SiC
4.4 GHz
5 GHz
200 W
11.5 dB
NA
40 V
Evaluation Board
Flange
Yes
GaN on SiC
4.4 GHz
5 GHz
200 W
11.5 dB
33%
40 V
Packaged Discrete Transistor
Flange

Knowledge Center

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Communications Infrastructure

GaN on SiC Range and Thermal Awareness Eases X-Band Radar Design

As the need for smaller and higher performing radar systems is increasing, GaN on SiC has become the technology of choice for next generation radar systems. This article will discuss GaN on SiC MMIC solutions to thermal concerns for next generation radar systems during continuous wave (CW) operation.
Continue Reading 
 Technical Articles
board-in-lab
GaN on SiC

RF Power Amplification 101: Handling Non-Idealities

This is the third and final part of the RF Power Amplification 101 Series and takes real-world waveforms and transistor behavior into account as we revisit gate biasing and efficiency.
Continue Reading 
 Technical Articles
highpower_wideband_lband_image
GaN on SiC

Thermal Considerations for X-Band MMICs Under CW Operation

Join Kasyap Patel of Wolfspeed as we discuss GaN on SiC MMIC solutions to thermal concerns for next generation radar systems during continuous wave (CW) operation.
 View Now
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