RF
Satellite Communications
Wolfspeed offers high-efficiency and high-gain GaN on SiC components that support satellite communications delivering full video bandwidth for multi-carrier streaming - the fastest bits/sec per MHz. These components also offer outstanding thermal properties; by dissipating heat energy more efficiently, GaN on SiC operates at lower temperatures. With a portfolio that spans RF functionality and showcases the industry's highest reliability, Wolfspeed is the partner of choice in helping develop next-generation satcom solutions.
Products
Satellite Communications
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Satellite Communications
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Yes | GaN on SiC | 12.7 GHz | 18 GHz | 1 W | 23 dB | 30% | 28 V | Packaged MMIC | Surface Mount | |||||
CMPA1D1J001S New | Yes | GaN on SiC | 12.7 GHz | 18 GHz | 1 W | 23 dB | 30% | 28 V | Packaged MMIC | Surface Mount | ||||
Yes | GaN on SiC | 13.5 GHz | 14.5 GHz | 25 W | 26 dB | 16% | 40 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | 13.5 GHz | 14.5 GHz | 25 W | 26 dB | 16% | 40 V | Packaged MMIC | Flange | |||||
Yes | GaN on SiC | 5.5 GHz | 8.5 GHz | 30 W | 25 dB | 30% | 28 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | 5.5 GHz | 8.5 GHz | 30 W | 25 dB | 30% | 28 V | Packaged MMIC | Flange | |||||
Yes | GaN on SiC | 5.5 GHz | 8.5 GHz | 30 W | 30 dB | 44% | 28 V | MMIC Bare Die | Die | |||||
Yes | GaN on SiC | 13.75 GHz | 14.5 GHz | 30 W | 26 dB | 25% | 40 V | MMIC Bare Die | Die | |||||
Yes | GaN on SiC | 7.9 GHz | 8.4 GHz | 50 W | >13 dB | 33% | 40 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | 7.9 GHz | 8.4 GHz | 50 W | >13 dB | 33% | 40 V | Packaged Discrete Transistor | Flange | |||||
Yes | GaN on SiC | 12.7 GHz | 13.25 GHz | 65 W | 26 dB | 30% | 40 V | MMIC Bare Die | Die | |||||
No | GaN on SiC | 12.75 GHz | 13.25 GHz | 90 W | 25 dB | 30% | 40 V | Packaged MMIC | Flange | |||||
Yes | GaN on SiC | 4.4 GHz | 5 GHz | 200 W | 11.5 dB | 33% | 40 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | 4.4 GHz | 5 GHz | 200 W | 11.5 dB | 33% | 40 V | Packaged Discrete Transistor | Flange |
Knowledge Center
Wolfspeed RF GaN meets 5G demands on PA design
Wolfspeed GaN on SiC products can replace inefficient silicon parts in 5G cellular transmitter amplifiers, achieving higher linearization, greater power density and improved thermal conductivity.
Improving Pulse Fidelity in RF Power Amplifiers
A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.