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Satellite Communications

Wolfspeed offers high-efficiency and high-gain GaN on SiC components that support satellite communications delivering full video bandwidth for multi-carrier streaming - the fastest bits/sec per MHz. These components also offer outstanding thermal properties; by dissipating heat energy more efficiently, GaN on SiC operates at lower temperatures. With a portfolio that spans RF functionality and showcases the industry's highest reliability, Wolfspeed is the partner of choice in helping develop next-generation satcom solutions.
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Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CMPA1D1E025F
Yes
GaN on SiC
13.5 GHz
14.5 GHz
25 W
26 dB
16%
40 V
Packaged MMIC
Flange
Yes
GaN on SiC
13.5 GHz
14.5 GHz
25 W
26 dB
NA
40 V
Evaluation Board
Flange
Yes
GaN on SiC
13.75 GHz
14.5 GHz
30 W
26 dB
25%
40 V
MMIC Bare Die
Die
Yes
GaN on SiC
5.5 GHz
8.5 GHz
30 W
30 dB
44%
28 V
MMIC Bare Die
Die
Yes
GaN on SiC
5.5 GHz
8.5 GHz
30 W
25 dB
NA
28 V
Evaluation Board
Flange
Yes
GaN on SiC
5.5 GHz
8.5 GHz
30 W
25 dB
30%
28 V
Packaged MMIC
Flange
Yes
GaN on SiC
7.9 GHz
8.4 GHz
50 W
>13 dB
33%
40 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
7.9 GHz
8.4 GHz
50 W
>13 dB
NA
40 V
Evaluation Board
Flange
Yes
GaN on SiC
12.7 GHz
13.25 GHz
65 W
26 dB
30%
40 V
MMIC Bare Die
Die
Yes
GaN on SiC
13.25 GHz
90 W
25 dB
40 V
Packaged MMIC
Flange
Yes
GaN on SiC
4.4 GHz
5 GHz
200 W
11.5 dB
33%
40 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
4.4 GHz
5 GHz
200 W
11.5 dB
NA
40 V
Evaluation Board
Flange
Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
Yes
GaN on SiC
13.5 GHz
14.5 GHz
25 W
26 dB
16%
40 V
Packaged MMIC
Flange
Yes
GaN on SiC
13.5 GHz
14.5 GHz
25 W
26 dB
NA
40 V
Evaluation Board
Flange
Yes
GaN on SiC
13.75 GHz
14.5 GHz
30 W
26 dB
25%
40 V
MMIC Bare Die
Die
Yes
GaN on SiC
5.5 GHz
8.5 GHz
30 W
30 dB
44%
28 V
MMIC Bare Die
Die
Yes
GaN on SiC
5.5 GHz
8.5 GHz
30 W
25 dB
NA
28 V
Evaluation Board
Flange
Yes
GaN on SiC
5.5 GHz
8.5 GHz
30 W
25 dB
30%
28 V
Packaged MMIC
Flange
Yes
GaN on SiC
7.9 GHz
8.4 GHz
50 W
>13 dB
33%
40 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
7.9 GHz
8.4 GHz
50 W
>13 dB
NA
40 V
Evaluation Board
Flange
Yes
GaN on SiC
12.7 GHz
13.25 GHz
65 W
26 dB
30%
40 V
MMIC Bare Die
Die
Yes
GaN on SiC
13.25 GHz
90 W
25 dB
40 V
Packaged MMIC
Flange
Yes
GaN on SiC
4.4 GHz
5 GHz
200 W
11.5 dB
33%
40 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
4.4 GHz
5 GHz
200 W
11.5 dB
NA
40 V
Evaluation Board
Flange

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Recommendations for Improving Pulse Fidelity in RF Power Amplifiers

Join Scott Blum, RF Applications Engineer with Wolfspeed as he discusses how to design areas of a pulsed amplifier circuit to achieve a high degree of pulse fidelity. Also, what parts of the amplifier circuit help or hurt the pulse fidelity and how the parts of the amplifier circuit are best designed.
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