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Satellite Communications

Wolfspeed offers high-efficiency and high-gain GaN on SiC components that support satellite communications delivering full video bandwidth for multi-carrier streaming - the fastest bits/sec per MHz. These components also offer outstanding thermal properties; by dissipating heat energy more efficiently, GaN on SiC operates at lower temperatures. With a portfolio that spans RF functionality and showcases the industry's highest reliability, Wolfspeed is the partner of choice in helping develop next-generation satcom solutions.
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Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CMPA1D1E025F-AMP
Yes
GaN on SiC
13.5 GHz
14.5 GHz
25 W
26 dB
NA
40 V
Evaluation Board
Flange
Yes
GaN on SiC
13.5 GHz
14.5 GHz
25 W
26 dB
16%
40 V
Packaged MMIC
Flange
Yes
GaN on SiC
13.5 GHz
14.5 GHz
25 W
26 dB
16%
40 V
Packaged MMIC
Flange
Yes
GaN on SiC
5.5 GHz
8.5 GHz
30 W
25 dB
NA
28 V
Evaluation Board
Flange
Yes
GaN on SiC
5.5 GHz
8.5 GHz
30 W
25 dB
30%
28 V
Packaged MMIC
Flange
Yes
GaN on SiC
5.5 GHz
8.5 GHz
30 W
30 dB
44%
28 V
MMIC Bare Die
Die
Yes
GaN on SiC
13.75 GHz
14.5 GHz
30 W
26 dB
25%
40 V
MMIC Bare Die
Die
Yes
GaN on SiC
13.75 GHz
14.5 GHz
30 W
26 dB
25%
40 V
MMIC Bare Die
Die
Yes
GaN on SiC
5.5 GHz
8.5 GHz
30 W
25 dB
NA
28 V
Evaluation Board
Flange
Yes
GaN on SiC
5.5 GHz
8.5 GHz
30 W
25 dB
30%
28 V
Packaged MMIC
Flange
Yes
GaN on SiC
7.9 GHz
8.4 GHz
50 W
>13 dB
NA
40 V
Evaluation Board
Flange
Yes
GaN on SiC
7.9 GHz
8.4 GHz
50 W
>13 dB
33%
40 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
7.9 GHz
8.4 GHz
50 W
>13 dB
33%
40 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
7.9 GHz
8.4 GHz
50 W
>13 dB
NA
40 V
Evaluation Board
Flange
CMPA1H1J050F
New
Yes
GaN on SiC
60 W
28 dB
32%
28 V
Packaged MMIC
Flange
Yes
GaN on SiC
12.7 GHz
13.25 GHz
65 W
26 dB
30%
40 V
MMIC Bare Die
Die
Yes
GaN on SiC
12.7 GHz
13.25 GHz
65 W
26 dB
30%
40 V
MMIC Bare Die
Die
Yes
GaN on SiC
13.25 GHz
90 W
25 dB
40 V
Packaged MMIC
Flange
Yes
GaN on SiC
4.4 GHz
5 GHz
200 W
11.5 dB
NA
40 V
Evaluation Board
Flange
Yes
GaN on SiC
4.4 GHz
5 GHz
200 W
11.5 dB
33%
40 V
Packaged Discrete Transistor
Flange
Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
Yes
GaN on SiC
13.5 GHz
14.5 GHz
25 W
26 dB
NA
40 V
Evaluation Board
Flange
Yes
GaN on SiC
13.5 GHz
14.5 GHz
25 W
26 dB
16%
40 V
Packaged MMIC
Flange
Yes
GaN on SiC
13.5 GHz
14.5 GHz
25 W
26 dB
16%
40 V
Packaged MMIC
Flange
Yes
GaN on SiC
5.5 GHz
8.5 GHz
30 W
25 dB
NA
28 V
Evaluation Board
Flange
Yes
GaN on SiC
5.5 GHz
8.5 GHz
30 W
25 dB
30%
28 V
Packaged MMIC
Flange
Yes
GaN on SiC
5.5 GHz
8.5 GHz
30 W
30 dB
44%
28 V
MMIC Bare Die
Die
Yes
GaN on SiC
13.75 GHz
14.5 GHz
30 W
26 dB
25%
40 V
MMIC Bare Die
Die
Yes
GaN on SiC
13.75 GHz
14.5 GHz
30 W
26 dB
25%
40 V
MMIC Bare Die
Die
Yes
GaN on SiC
5.5 GHz
8.5 GHz
30 W
25 dB
NA
28 V
Evaluation Board
Flange
Yes
GaN on SiC
5.5 GHz
8.5 GHz
30 W
25 dB
30%
28 V
Packaged MMIC
Flange
Yes
GaN on SiC
7.9 GHz
8.4 GHz
50 W
>13 dB
NA
40 V
Evaluation Board
Flange
Yes
GaN on SiC
7.9 GHz
8.4 GHz
50 W
>13 dB
33%
40 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
7.9 GHz
8.4 GHz
50 W
>13 dB
33%
40 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
7.9 GHz
8.4 GHz
50 W
>13 dB
NA
40 V
Evaluation Board
Flange
Yes
GaN on SiC
60 W
28 dB
32%
28 V
Packaged MMIC
Flange
Yes
GaN on SiC
12.7 GHz
13.25 GHz
65 W
26 dB
30%
40 V
MMIC Bare Die
Die
Yes
GaN on SiC
12.7 GHz
13.25 GHz
65 W
26 dB
30%
40 V
MMIC Bare Die
Die
Yes
GaN on SiC
13.25 GHz
90 W
25 dB
40 V
Packaged MMIC
Flange
Yes
GaN on SiC
4.4 GHz
5 GHz
200 W
11.5 dB
NA
40 V
Evaluation Board
Flange
Yes
GaN on SiC
4.4 GHz
5 GHz
200 W
11.5 dB
33%
40 V
Packaged Discrete Transistor
Flange

Knowledge Center

highpower_wideband_lband_image
GaN on SiC

Thermal Considerations for X-Band MMICs Under CW Operation

Join Kasyap Patel of Wolfspeed for a live webinar on September 20th as we discuss GaN on SiC MMIC solutions to thermal concerns for next generation radar systems during continuous wave (CW) operation.
Register Now 
 Webinars
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GaN on SiC

RF Power Amplification 101: Amplifier Classes

The purpose of the RF PA is to increase the power of the RF input signal. This is achieved by applying the signal to the gate. This article compares some of the common amplifier classes, starting with the most-linear but least-efficient Class A to the still-linear (due to the ideal transistor) but more-efficient Class F and inverse-F.
Continue Reading 
 Technical Articles
xband-hero-image
GaN on SiC

Integrated Expertise Delivers the Best GaN Solutions for X-Band PAs

Gallium nitride is the undisputed technology for achieving high-efficiency operation in high-frequency applications, such as those at X-band (8–12 GHz). But device selection for X-band applications doesn’t end with choosing the material technology, because turning the bulk material characteristics into high-performance GaN on SiC devices is quite another matter.
Continue Reading 
 Technical Articles
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