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产品SKU | 在线购买 | 索取样品 | 数据手册 | CAD模型 | 新设计推荐？ | 技术 | 频率（最小值） | 频率（最大值） | 峰值输出功率 | 增益 | 效率 | 工作电压 | 类型 | 封装类型 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CMPA1D1J001S-AMP1 New | Yes | GaN on SiC | 12.7 GHz | 18 GHz | 1 W | 23 dB | 30% | 28 V | Packaged MMIC | Surface Mount | ||||
CMPA1D1J001S New | Yes | GaN on SiC | 12.7 GHz | 18 GHz | 1 W | 23 dB | 30% | 28 V | Packaged MMIC | Surface Mount | ||||
CMPA1D1E025F-AMP | Yes | GaN on SiC | 13.5 GHz | 14.5 GHz | 25 W | 26 dB | 16% | 40 V | Evaluation Board | Flange | ||||
CMPA1D1E025F | Yes | GaN on SiC | 13.5 GHz | 14.5 GHz | 25 W | 26 dB | 16% | 40 V | Packaged MMIC | Flange | ||||
CMPA5585030F-AMP | Yes | GaN on SiC | 5.5 GHz | 8.5 GHz | 30 W | 25 dB | 30% | 28 V | Evaluation Board | Flange | ||||
CMPA5585030F | Yes | GaN on SiC | 5.5 GHz | 8.5 GHz | 30 W | 25 dB | 30% | 28 V | Packaged MMIC | Flange | ||||
CMPA5585030D | Yes | GaN on SiC | 5.5 GHz | 8.5 GHz | 30 W | 30 dB | 44% | 28 V | MMIC Bare Die | Die | ||||
CMPA1D1E030D | Yes | GaN on SiC | 13.75 GHz | 14.5 GHz | 30 W | 26 dB | 25% | 40 V | MMIC Bare Die | Die | ||||
CGHV96050F1-AMP | Yes | GaN on SiC | 7.9 GHz | 8.4 GHz | 50 W | >13 dB | 33% | 40 V | Evaluation Board | Flange | ||||
CGHV96050F1 | Yes | GaN on SiC | 7.9 GHz | 8.4 GHz | 50 W | >13 dB | 33% | 40 V | Packaged Discrete Transistor | Flange | ||||
CMPA1E1F060F New | Yes | GaN on SiC | 13.4 GHz | 15.5 GHz | 60 W | 26 dB | 28 V | Packaged MMIC | Flange | |||||
CMPA1H1J050F-AMP New | Yes | GaN on SiC | 17.3 GHz | 18.4 GHz | 60 W | 25 dB | 30% | 28 V | Evaluation Board | Flange | ||||
CMPA1H1J050F New | Yes | GaN on SiC | 17.3 GHz | 18.4 GHz | 60 W | 25 dB | 30% | 28 V | Packaged MMIC | Flange | ||||
CMPA1E1F060D New | Yes | GaN on SiC | 13.75 GHz | 15.5 GHz | 60 W | 26 dB | 28 V | MMIC Bare Die | Die | |||||
CMPA1C1D060D | Yes | GaN on SiC | 12.7 GHz | 13.25 GHz | 65 W | 26 dB | 30% | 40 V | MMIC Bare Die | Die | ||||
CMPA1C1D080F | No | GaN on SiC | 12.75 GHz | 13.25 GHz | 90 W | 25 dB | 30% | 40 V | Packaged MMIC | Flange | ||||
CGHV50200F-AMP | Yes | GaN on SiC | 4.4 GHz | 5 GHz | 200 W | 11.5 dB | 33% | 40 V | Evaluation Board | Flange | ||||
CGHV50200F | Yes | GaN on SiC | 4.4 GHz | 5 GHz | 200 W | 11.5 dB | 33% | 40 V | Packaged Discrete Transistor | Flange |
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Wolfspeed RF GaN meets 5G demands on PA design
Wolfspeed GaN on SiC products can replace inefficient silicon parts in 5G cellular transmitter amplifiers, achieving higher linearization, greater power density and improved thermal conductivity.
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Improving Pulse Fidelity in RF Power Amplifiers
A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
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