RF
Communications Infrastructure
Wolfspeed offers an extensive portfolio of GaN on SiC and LDMOS power transistors for use in the design of telecommunication systems supporting all global standards and frequency bands, from 450 MHz to 5 GHz and power levels to 1,000 W. Key features include high-power Doherty designs, ease of use with DPD systems, open-cavity and plastic package options, and reference designs. As 5G continues to expand and mature, we will continue to expand and explore the advantages inherent in wide bandgap GaN on SiC for designers and developers seeking better performance everywhere. With over 30 years of wide bandgap materials and product innovation enabling industry-leading devices that power more and consume less, Wolfspeed is the complete design partner for your RF needs.
Products
Communications Infrastructure
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Communications Infrastructure
Product SKU | Buy Online | Data Sheet | Recommended For New Design? | Technology | Frequency Min | Frequency Max | P3dB Output Power | Gain | Efficiency | Operating Voltage | Package Type |
---|---|---|---|---|---|---|---|---|---|---|---|
Yes | GaN on SiC | DC | 5 GHz | 10 W | 18 dB | 19% | 48 V | Surface Mount | |||
Discontinued | LDMOS | 0.9 GHz | 2.7 GHz | 12 W | 20 dB | 60% | 28 V | Surface Mount | |||
Yes | LDMOS | 0.5 GHz | 1.4 GHz | 25 W | 19 dB | 64% | 48 V | Surface Mount | |||
Discontinued | LDMOS | 1.8 GHz | 2.2 GHz | 27 W | 17 dB | 49% | 28 V | Earless | |||
Discontinued | LDMOS | 1.8 GHz | 2.2 GHz | 28 W | 21 dB | 29% | 28 V | Earless | |||
Yes | LDMOS | 0.5 GHz | 1 GHz | 30 W | 32 dB | 19% | 48 V | Surface Mount | |||
Yes | LDMOS | 1.8 GHz | 2.2 GHz | 37 W | 30 dB | 18.5% | 28 V | Surface Mount | |||
Discontinued | GaN on SiC | 2.515 GHz | 2.675 GHz | 45 W | 16 dB | 57% | 48 V | Surface Mount | |||
Yes | GaN on SiC | 1.8 GHz | 2.2 GHz | 45 W | 19 dB | 27% | 50 V | Earless | |||
Discontinued | LDMOS | 2.3 GHz | 2.7 GHz | 45.7 W | 14 dB | 44% | 28 V | Earless | |||
Discontinued | GaN on SiC | 3.4 GHz | 3.8 GHz | 50 W | 15 dB | 55% | 48 V | Surface Mount | |||
Yes | GaN on SiC | 2.496 GHz | 2.69 GHz | 50 W | 16.5 dB | 57% | 48 V | Surface Mount | |||
Yes | GaN on SiC | 3.7 GHz | 3.98 GHz | 60 W | 13 dB | 52% | 48 V | Surface Mount | |||
Yes | GaN on SiC | 3.3 GHz | 3.8 GHz | 60 W | 13.5 dB | 52% | 48 V | Surface Mount | |||
Yes | LDMOS | 1.8 GHz | 2.2 GHz | 63 W | 27 dB | 37% | 28 V | Surface Mount | |||
No | LDMOS | 1.805 GHz | 1.99 GHz | 140 W | 20.5 dB | 31% | 28 V | Earless | |||
Yes | GaN on SiC | 2.62 GHz | 2.69 GHz | 170 W | 16.8 dB | 43% | 48 V | Earless | |||
Yes | GaN on SiC | 2.3 GHz | 2.7 GHz | 170 W | 17 dB | 43% | 50 V | Earless | |||
Yes | GaN on SiC | 3.3 GHz | 3.9 GHz | 200 W | 13.5 dB | 42% | 48 V | Earless | |||
Discontinued | LDMOS | 2.11 GHz | 2.17 GHz | 208 W | 18 dB | 35% | 28 V | Earless | |||
Discontinued | LDMOS | 1.805 GHz | 1.99 GHz | 220 W | 20.5 dB | 32% | 28 V | Earless | |||
Discontinued | LDMOS | 1.805 GHz | 1.88 GHz | 222 W | 20 dB | 36% | 28 V | Earless | |||
Yes | GaN on SiC | 3.7 GHz | 4.1 GHz | 235 W | 11.5 dB | 45% | 48 V | Earless | |||
Yes | LDMOS | 2.515 GHz | 2.675 GHz | 240 W | 13.5 dB | 47% | 28 V | Plastic | |||
Yes | GaN on SiC | 2.49 GHz | 2.69 GHz | 250 W | 14 dB | 54% | 48 V | Earless | |||
Yes | LDMOS | 0.79 GHz | 0.82 GHz | 250 W | 15.5 dB | 45% | 48 V | Plastic | |||
Yes | LDMOS | 0.5 GHz | 1 GHz | 250 W | 22.5 dB | 36% | 48 V | Plastic | |||
Yes | GaN on SiC | 2.62 GHz | 2.69 GHz | 270 W | 17 dB | 42% | 48 V | Earless | |||
Yes | LDMOS | 0.5 GHz | 1 GHz | 275 W | 18 dB | 56% | 48 V | Surface Mount | |||
Yes | GaN on SiC | 3.3 GHz | 3.9 GHz | 280 W | 13.5 dB | 46% | 48 V | Earless | |||
Yes | LDMOS | 0.5 GHz | 1 GHz | 287 W | 22.5 dB | 40% | 48 V | Plastic | |||
Yes | LDMOS | 2.11 GHz | 2.2 GHz | 290 W | 16 dB | 52% | 28 V | Plastic | |||
Yes | GaN on SiC | 2.62 GHz | 2.69 GHz | 300 W | 18 dB | 39% | 48 V | Earless | |||
Yes | GaN on SiC | 1.8 GHz | 2.2 GHz | 300 W | 19 dB | 38% | 48 V | Earless | |||
Yes | LDMOS | 1.8 GHz | 2.2 GHz | 315 W | 16 dB | 50.5% | 28 V | Plastic | |||
Yes | GaN on SiC | 2.3 GHz | 2.7 GHz | 340 W | 17 dB | 40% | 48 V | Earless | |||
Yes | GaN on SiC | 1.93 GHz | 2.02 GHz | 350 W | 16.3 dB | 58% | 48 V | Earless | |||
Yes | GaN on SiC | 2.495 GHz | 2.69 GHz | 370 W | 13.8 dB | 54% | 48 V | Earless | |||
Yes | LDMOS | 0.5 GHz | 1 GHz | 370 W | 17 dB | 52% | 48 V | Plastic | |||
Yes | LDMOS | 0.5 GHz | 1 GHz | 370 W | 23.5 dB | 39% | 48 V | Plastic | |||
Yes | LDMOS | 0.5 GHz | 1 GHz | 380 W | 18.5 dB | 52% | 48 V | Plastic | |||
Yes | GaN on SiC | 3.3 GHz | 3.9 GHz | 400 W | 13 dB | 40% | 48 V | Earless | |||
Yes | GaN on SiC | 3.6 GHz | 3.8 GHz | 400 W | 13 dB | 42% | 48 V | Earless | |||
Yes | LDMOS | 2.62 GHz | 2.69 GHz | 400 W | 13.5 dB | 47% | 28 V | Plastic | |||
Yes | GaN on SiC | 2.5 GHz | 2.7 GHz | 400 W | 14 dB | 50% | 48 V | Earless | |||
Yes | GaN on SiC | 2.11 GHz | 2.2 GHz | 400 W | 15.5 dB | 55% | 48 V | Earless | |||
No | LDMOS | 1.805 GHz | 1.88 GHz | 420 W | 16 dB | 51.5% | 28 V | Earless | |||
Yes | LDMOS | 0.5 GHz | 1 GHz | 420 W | 17.5 dB | 53% | 48 V | Plastic | |||
No | LDMOS | 1.8 GHz | 2.3 GHz | 436 W | 16 dB | 48.7% | 28 V | Earless | |||
Yes | GaN on SiC | 3.3 GHz | 3.8 GHz | 440 W | 12.3 dB | 41 % | 48 V | Earless | |||
Yes | GaN on SiC | 3.7 GHz | 3.98 GHz | 450 W | 12 dB | 42% | 48 V | Earless | |||
Yes | GaN on SiC | 3.6 GHz | 3.7 GHz | 450 W | 12 dB | 38% | 48 V | Earless | |||
Yes | GaN on SiC | 2.11 GHz | 2.2 GHz | 450 W | 15 dB | 60% | 48 V | Earless | |||
Yes | GaN on SiC | 0.758 GHz | 0.96 GHz | 450 W | 18 dB | 59% | 48 V | Earless | |||
Yes | GaN on SiC | 1.805 GHz | 1.88 GHz | 460 W | 15.5 dB | 60% | 48 V | Earless | |||
Yes | LDMOS | 0.92 GHz | 0.96 GHz | 460 W | 17.5 dB | 52% | 48 V | Surface Mount | |||
Yes | GaN on SiC | 2.11 GHz | 2.17 GHz | 490 W | 14.4 dB | 59% | 48 V | Earless | |||
Yes | GaN on SiC | 1.93 GHz | 2.02 GHz | 500 W | 14.8 dB | 53% | 48 V | Earless | |||
Yes | GaN on SiC | 2.515 GHz | 2.675 GHz | 500 W | 15 dB | 52% | 48 V | Earless | |||
Yes | GaN on SiC | 2.3 GHz | 2.4 GHz | 500 W | 15.7 dB | 54% | 48 V | Earless | |||
Yes | GaN on SiC | 1.805 GHz | 1.88 GHz | 500 W | 15.7 dB | 54% | 48 V | Earless | |||
Discontinued | LDMOS | 0.859 GHz | 0.96 GHz | 500 W | 17 dB | 52% | 48 V | Plastic | |||
Yes | LDMOS | 0.5 GHz | 1 GHz | 550 W | 18 dB | 55% | 48 V | Plastic | |||
Yes | LDMOS | 0.5 GHz | 1 GHz | 600 W | 19 dB | 49% | 48 V | Plastic | |||
Yes | LDMOS | 0.73 GHz | 0.96 GHz | 615 W | 19 dB | 50% | 48 V | Earless | |||
Yes | GaN on SiC | 2.496 GHz | 2.69 GHz | 620 W | 14 dB | 52% | 48 V | Earless | |||
Yes | GaN on SiC | 2.62 GHz | 2.69 GHz | 630 W | 14 dB | 49% | 48 V | Earless | |||
Yes | LDMOS | 0.73 GHz | 0.96 GHz | 800 W | 18 dB | 48% | 48 V | Plastic |
Knowledge Center
Wolfspeed RF GaN meets 5G demands on PA design
Wolfspeed GaN on SiC products can replace inefficient silicon parts in 5G cellular transmitter amplifiers, achieving higher linearization, greater power density and improved thermal conductivity.
Resolving mMIMO PA Design Challenges
Massive multiple-input-multiple output (mMIMO) system designers are being challenged to improve system efficiency. Balancing wideband linearity with efficiency is a requirement to fit the size, weight, and power requirements of mMIMO systems. View the whitepaper from Wolfspeed and Analog Devices.