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Communications Infrastructure

Wolfspeed offers an extensive portfolio of GaN on SiC and LDMOS power transistors for use in the design of telecommunication systems supporting all global standards and frequency bands, from 450 MHz to 5 GHz and power levels to 1,000 W. Key features include high-power Doherty designs, ease of use with DPD systems, open-cavity and plastic package options, and reference designs. As 5G continues to expand and mature, we will continue to expand and explore the advantages inherent in wide bandgap GaN on SiC for designers and developers seeking better performance everywhere. With over 30 years of wide bandgap materials and product innovation enabling industry-leading devices that power more and consume less, Wolfspeed is the complete design partner for your RF needs.
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Communications Infrastructure

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Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
WSGPA01-V1-R3K
Yes
GaN on SiC
DC
5 GHz
10 W
18 dB
19%
48 V
Surface Mount
No
LDMOS
0.9 GHz
2.7 GHz
12 W
20 dB
60%
28 V
Surface Mount
Yes
LDMOS
0.5 GHz
1.4 GHz
25 W
19 dB
64%
48 V
Surface Mount
No
LDMOS
1.8 GHz
2.2 GHz
27 W
17 dB
49%
28 V
Earless
No
LDMOS
1.8 GHz
2.2 GHz
28 W
21 dB
29%
28 V
Earless
Yes
LDMOS
0.5 GHz
1 GHz
30 W
32 dB
19%
48 V
Surface Mount
Yes
LDMOS
1.8 GHz
2.2 GHz
37 W
30 dB
18.5%
28 V
Surface Mount
Yes
GaN on SiC
2.515 GHz
2.675 GHz
45 W
16 dB
57%
48 V
Surface Mount
Yes
GaN on SiC
1.8 GHz
2.2 GHz
45 W
19 dB
27%
50 V
Earless
No
LDMOS
2.3 GHz
2.7 GHz
45.7 W
14 dB
44%
28 V
Earless
Yes
GaN on SiC
3.4 GHz
3.8 GHz
50 W
15 dB
55%
48 V
Surface Mount
Yes
GaN on SiC
2.496 GHz
2.69 GHz
50 W
16.5 dB
57%
48 V
Surface Mount
Yes
GaN on SiC
3.7 GHz
3.98 GHz
60 W
13 dB
52%
48 V
Surface Mount
Yes
GaN on SiC
3.3 GHz
3.8 GHz
60 W
13.5 dB
52%
48 V
Surface Mount
Yes
LDMOS
1.8 GHz
2.2 GHz
63 W
27 dB
37%
28 V
Surface Mount
No
LDMOS
1.805 GHz
1.99 GHz
140 W
20.5 dB
31%
28 V
Earless
Yes
GaN on SiC
2.62 GHz
2.69 GHz
170 W
16.8 dB
43%
48 V
Earless
Yes
GaN on SiC
2.3 GHz
2.7 GHz
170 W
17 dB
43%
50 V
Earless
Discontinued
LDMOS
0.746 GHz
0.768 GHz
175 W
17 dB
52%
50 V
Earless
Yes
GaN on SiC
3.3 GHz
3.9 GHz
200 W
13.5 dB
42%
48 V
Earless
No
LDMOS
2.11 GHz
2.17 GHz
208 W
18 dB
35%
28 V
Earless
No
LDMOS
1.805 GHz
1.99 GHz
220 W
20.5 dB
32%
28 V
Earless
No
LDMOS
1.805 GHz
1.88 GHz
222 W
20 dB
36%
28 V
Earless
Yes
GaN on SiC
3.7 GHz
4.1 GHz
235 W
11.5 dB
45%
48 V
Earless
Yes
LDMOS
2.515 GHz
2.675 GHz
240 W
13.5 dB
47%
28 V
Plastic
Yes
GaN on SiC
2.49 GHz
2.69 GHz
250 W
14 dB
54%
48 V
Earless
Yes
LDMOS
0.79 GHz
0.82 GHz
250 W
15.5 dB
45%
48 V
Plastic
Discontinued
LDMOS
0.746 GHz
0.96 GHz
250 W
18.5 dB
48%
48 V
Earless
Yes
LDMOS
0.5 GHz
1 GHz
250 W
22.5 dB
36%
48 V
Plastic
Yes
GaN on SiC
2.62 GHz
2.69 GHz
270 W
17 dB
42%
48 V
Earless
Yes
LDMOS
0.5 GHz
1 GHz
275 W
18 dB
56%
48 V
Surface Mount
Yes
GaN on SiC
3.3 GHz
3.9 GHz
280 W
13.5 dB
46%
48 V
Earless
Yes
LDMOS
0.5 GHz
1 GHz
287 W
22.5 dB
40%
48 V
Plastic
Yes
LDMOS
2.11 GHz
2.2 GHz
290 W
16 dB
52%
28 V
Plastic
Yes
GaN on SiC
2.62 GHz
2.69 GHz
300 W
18 dB
39%
48 V
Earless
Yes
GaN on SiC
1.8 GHz
2.2 GHz
300 W
19 dB
38%
48 V
Earless
Yes
LDMOS
1.8 GHz
2.2 GHz
315 W
16 dB
50.5%
28 V
Plastic
Yes
GaN on SiC
2.3 GHz
2.7 GHz
340 W
17 dB
40%
48 V
Earless
Yes
GaN on SiC
1.93 GHz
2.02 GHz
350 W
16.3 dB
58%
48 V
Earless
Yes
GaN on SiC
2.495 GHz
2.69 GHz
370 W
13.8 dB
54%
48 V
Earless
Yes
LDMOS
0.5 GHz
1 GHz
370 W
17 dB
52%
48 V
Plastic
Yes
LDMOS
0.5 GHz
1 GHz
370 W
23.5 dB
39%
48 V
Plastic
Yes
LDMOS
0.5 GHz
1 GHz
380 W
18.5 dB
52%
48 V
Plastic
Yes
GaN on SiC
3.3 GHz
3.9 GHz
400 W
13 dB
40%
48 V
Earless
Yes
GaN on SiC
3.6 GHz
3.8 GHz
400 W
13 dB
42%
48 V
Earless
Yes
LDMOS
2.62 GHz
2.69 GHz
400 W
13.5 dB
47%
28 V
Plastic
Yes
GaN on SiC
2.5 GHz
2.7 GHz
400 W
14 dB
50%
48 V
Earless
Yes
GaN on SiC
2.11 GHz
2.2 GHz
400 W
15.5 dB
55%
48 V
Earless
No
LDMOS
1.805 GHz
1.88 GHz
420 W
16 dB
51.5%
28 V
Earless
Yes
LDMOS
0.5 GHz
1 GHz
420 W
17.5 dB
53%
48 V
Plastic
No
LDMOS
1.8 GHz
2.3 GHz
436 W
16 dB
48.7%
28 V
Earless
GTRB384608FC-V1
New
Yes
GaN on SiC
3.3 GHz
3.8 GHz
440 W
12.3 dB
41 %
48 V
Earless
Yes
GaN on SiC
3.7 GHz
3.98 GHz
450 W
12 dB
42%
48 V
Earless
Yes
GaN on SiC
3.6 GHz
3.7 GHz
450 W
12 dB
38%
48 V
Earless
Yes
GaN on SiC
2.11 GHz
2.2 GHz
450 W
15 dB
60%
48 V
Earless
Yes
GaN on SiC
0.758 GHz
0.96 GHz
450 W
18 dB
59%
48 V
Earless
Yes
GaN on SiC
1.805 GHz
1.88 GHz
460 W
15.5 dB
60%
48 V
Earless
Yes
LDMOS
0.92 GHz
0.96 GHz
460 W
17.5 dB
52%
48 V
Surface Mount
Yes
GaN on SiC
2.11 GHz
2.17 GHz
490 W
14.4 dB
59%
48 V
Earless
Yes
GaN on SiC
1.93 GHz
2.02 GHz
500 W
14.8 dB
53%
48 V
Earless
Yes
GaN on SiC
2.515 GHz
2.675 GHz
500 W
15 dB
52%
48 V
Earless
Yes
GaN on SiC
2.3 GHz
2.4 GHz
500 W
15.7 dB
54%
48 V
Earless
Yes
GaN on SiC
1.805 GHz
1.88 GHz
500 W
15.7 dB
54%
48 V
Earless
No
LDMOS
0.859 GHz
0.96 GHz
500 W
17 dB
52%
48 V
Plastic
Yes
LDMOS
0.5 GHz
1 GHz
550 W
18 dB
55%
48 V
Plastic
Yes
LDMOS
0.5 GHz
1 GHz
600 W
19 dB
49%
48 V
Plastic
Yes
LDMOS
0.73 GHz
0.96 GHz
615 W
19 dB
50%
48 V
Earless
Yes
GaN on SiC
2.62 GHz
2.69 GHz
630 W
14 dB
49%
48 V
Earless
Yes
LDMOS
0.73 GHz
0.96 GHz
800 W
18 dB
48%
48 V
Plastic
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