Skip to Main Content

RF

Communications Infrastructure

Wolfspeed offers an extensive portfolio of GaN on SiC and LDMOS power transistors for use in the design of telecommunication systems supporting all global standards and frequency bands, from 450 MHz to 5 GHz and power levels to 1,000 W. Key features include high-power Doherty designs, ease of use with DPD systems, open-cavity and plastic package options, and reference designs. As 5G continues to expand and mature, we will continue to expand and explore the advantages inherent in wide bandgap GaN on SiC for designers and developers seeking better performance everywhere. With over 30 years of wide bandgap materials and product innovation enabling industry-leading devices that power more and consume less, Wolfspeed is the complete design partner for your RF needs.

Wolfspeed has entered into a definitive agreement to sell its RF business to MACOM Technology Solutions Holdings, Inc. Learn More

Products

Communications Infrastructure

No filters selected, showing all 69 products

Communications Infrastructure - Filter By

Communications Infrastructure

Product SKU	Buy Online	Data Sheet	Recommended For New Design?	Technology	Frequency Min	Frequency Max	P3dB Output Power	Gain	Efficiency	Operating Voltage	Package Type
WSGPA01-V1-R3K			Yes	GaN on SiC	DC	5 GHz	10 W	18 dB	19%	48 V	Surface Mount
PTFC270101M-V1			Discontinued	LDMOS	0.9 GHz	2.7 GHz	12 W	20 dB	60%	28 V	Surface Mount
PTVA120252MT-V1			Yes	LDMOS	0.5 GHz	1.4 GHz	25 W	19 dB	64%	48 V	Surface Mount
PXAC210552FC-V1			Discontinued	LDMOS	1.8 GHz	2.2 GHz	27 W	17 dB	49%	28 V	Earless
PTFC210202FC-V1			Discontinued	LDMOS	1.8 GHz	2.2 GHz	28 W	21 dB	29%	28 V	Earless
PTGA090304MD-V2			Yes	LDMOS	0.5 GHz	1 GHz	30 W	32 dB	19%	48 V	Surface Mount
PTMC210404MD-V2			Yes	LDMOS	1.8 GHz	2.2 GHz	37 W	30 dB	18.5%	28 V	Surface Mount
GTRA260502M-V1			Discontinued	GaN on SiC	2.515 GHz	2.675 GHz	45 W	16 dB	57%	48 V	Surface Mount
GTVA220701FA-V1			Yes	GaN on SiC	1.8 GHz	2.2 GHz	45 W	19 dB	27%	50 V	Earless
PTAC240502FC-V1			Discontinued	LDMOS	2.3 GHz	2.7 GHz	45.7 W	14 dB	44%	28 V	Earless
GTRA360502M-V1			Discontinued	GaN on SiC	3.4 GHz	3.8 GHz	50 W	15 dB	55%	48 V	Surface Mount
WS1A2639-V1-R3K			Yes	GaN on SiC	2.496 GHz	2.69 GHz	50 W	16.5 dB	57%	48 V	Surface Mount
WS1A3940-V1-R3K			Yes	GaN on SiC	3.7 GHz	3.98 GHz	60 W	13 dB	52%	48 V	Surface Mount
WS1A3640-V1-R3K			Yes	GaN on SiC	3.3 GHz	3.8 GHz	60 W	13.5 dB	52%	48 V	Surface Mount
PTNC210604MD-V2			Yes	LDMOS	1.8 GHz	2.2 GHz	63 W	27 dB	37%	28 V	Surface Mount
PXFC191507FC-V1			No	LDMOS	1.805 GHz	1.99 GHz	140 W	20.5 dB	31%	28 V	Earless
GTVA261802FC-V1			Yes	GaN on SiC	2.62 GHz	2.69 GHz	170 W	16.8 dB	43%	48 V	Earless
GTVA261701FA-V1			Yes	GaN on SiC	2.3 GHz	2.7 GHz	170 W	17 dB	43%	50 V	Earless
GTRA362002FC-V1			Yes	GaN on SiC	3.3 GHz	3.9 GHz	200 W	13.5 dB	42%	48 V	Earless
PXFE211507FC-V1			Discontinued	LDMOS	2.11 GHz	2.17 GHz	208 W	18 dB	35%	28 V	Earless
PXFC192207FH-V3			Discontinued	LDMOS	1.805 GHz	1.99 GHz	220 W	20.5 dB	32%	28 V	Earless
PXFE181507FC-V1			Discontinued	LDMOS	1.805 GHz	1.88 GHz	222 W	20 dB	36%	28 V	Earless
GTRA412852FC-V1			Yes	GaN on SiC	3.7 GHz	4.1 GHz	235 W	11.5 dB	45%	48 V	Earless
PXAE261908NF-V1			Yes	LDMOS	2.515 GHz	2.675 GHz	240 W	13.5 dB	47%	28 V	Plastic
GTRA262802FC-V2			Yes	GaN on SiC	2.49 GHz	2.69 GHz	250 W	14 dB	54%	48 V	Earless
PTRA082808NF-V1			Yes	LDMOS	0.79 GHz	0.82 GHz	250 W	15.5 dB	45%	48 V	Plastic
PTVA082407NF-V2			Yes	LDMOS	0.5 GHz	1 GHz	250 W	22.5 dB	36%	48 V	Plastic
GTVA262701FA-V2			Yes	GaN on SiC	2.62 GHz	2.69 GHz	270 W	17 dB	42%	48 V	Earless
PTRA083818NF-V1			Yes	LDMOS	0.5 GHz	1 GHz	275 W	18 dB	56%	48 V	Surface Mount
GTRA362802FC-V1			Yes	GaN on SiC	3.3 GHz	3.9 GHz	280 W	13.5 dB	46%	48 V	Earless
PTVA092407NF-V2			Yes	LDMOS	0.5 GHz	1 GHz	287 W	22.5 dB	40%	48 V	Plastic
PXAE213708NB-V1			Yes	LDMOS	2.11 GHz	2.2 GHz	290 W	16 dB	52%	28 V	Plastic
GTVA262711FA-V2			Yes	GaN on SiC	2.62 GHz	2.69 GHz	300 W	18 dB	39%	48 V	Earless
GTVA212701FA-V2			Yes	GaN on SiC	1.8 GHz	2.2 GHz	300 W	19 dB	38%	48 V	Earless
PXAE183708NB-V1			Yes	LDMOS	1.8 GHz	2.2 GHz	315 W	16 dB	50.5%	28 V	Plastic
GTVA263202FC-V1			Yes	GaN on SiC	2.3 GHz	2.7 GHz	340 W	17 dB	40%	48 V	Earless
GTRB204402FC/1-V1			Yes	GaN on SiC	1.93 GHz	2.02 GHz	350 W	16.3 dB	58%	48 V	Earless
GTRA263902FC-V2			Yes	GaN on SiC	2.495 GHz	2.69 GHz	370 W	13.8 dB	54%	48 V	Earless
PTRA093818NF-V1			Yes	LDMOS	0.5 GHz	1 GHz	370 W	17 dB	52%	48 V	Plastic
PTVA084007NF-V1			Yes	LDMOS	0.5 GHz	1 GHz	370 W	23.5 dB	39%	48 V	Plastic
PTRA087008NB-V1			Yes	LDMOS	0.5 GHz	1 GHz	380 W	18.5 dB	52%	48 V	Plastic
GTRA364002FC-V1			Yes	GaN on SiC	3.3 GHz	3.9 GHz	400 W	13 dB	40%	48 V	Earless
GTRA384802FC-V1			Yes	GaN on SiC	3.6 GHz	3.8 GHz	400 W	13 dB	42%	48 V	Earless
PXAE263708NB-V1			Yes	LDMOS	2.62 GHz	2.69 GHz	400 W	13.5 dB	47%	28 V	Plastic
GTRB264318FC-V1			Yes	GaN on SiC	2.5 GHz	2.7 GHz	400 W	14 dB	50%	48 V	Earless
GTRB224402FC-V1			Yes	GaN on SiC	2.11 GHz	2.2 GHz	400 W	15.5 dB	55%	48 V	Earless
PXAD184218FV-V1			No	LDMOS	1.805 GHz	1.88 GHz	420 W	16 dB	51.5%	28 V	Earless
PTRA094808NF-V1			Yes	LDMOS	0.5 GHz	1 GHz	420 W	17.5 dB	53%	48 V	Plastic
PXAD214218FV-V1			No	LDMOS	1.8 GHz	2.3 GHz	436 W	16 dB	48.7%	28 V	Earless
GTRB384608FC-V1			Yes	GaN on SiC	3.3 GHz	3.8 GHz	440 W	12.3 dB	41 %	48 V	Earless
GTRB184402FC-V1 New			Yes	GaN on SiC	1.805 GHz	1.88 GHz	440 W	16.7 dB	56.3%	48 V	Earless
GTRB424908FC/1-V1			Yes	GaN on SiC	3.7 GHz	3.98 GHz	450 W	12 dB	42%	48 V	Earless
GTRA374902FC-V1			Yes	GaN on SiC	3.6 GHz	3.7 GHz	450 W	12 dB	38%	48 V	Earless
GTRB226002FC-V1			Yes	GaN on SiC	2.11 GHz	2.2 GHz	450 W	15 dB	60%	48 V	Earless
GTRB097152FC-V1			Yes	GaN on SiC	0.758 GHz	0.96 GHz	450 W	18 dB	59%	48 V	Earless
GTRA184602FC-V1			Yes	GaN on SiC	1.805 GHz	1.88 GHz	460 W	15.5 dB	60%	48 V	Earless
PTRA095908NB-V1			Yes	LDMOS	0.92 GHz	0.96 GHz	460 W	17.5 dB	52%	48 V	Surface Mount
GTRA214602FC-V1			Yes	GaN on SiC	2.11 GHz	2.17 GHz	490 W	14.4 dB	59%	48 V	Earless
GTRB206002FC/1-V1			Yes	GaN on SiC	1.93 GHz	2.02 GHz	500 W	14.8 dB	53%	48 V	Earless
GTRB266908FC-V1			Yes	GaN on SiC	2.515 GHz	2.675 GHz	500 W	15 dB	52%	48 V	Earless
GTRB246608FC-V1			Yes	GaN on SiC	2.3 GHz	2.4 GHz	500 W	15.7 dB	54%	48 V	Earless
GTRB186002FC-V1			Yes	GaN on SiC	1.805 GHz	1.88 GHz	500 W	15.7 dB	54%	48 V	Earless
PTRA094858NF-V1			Discontinued	LDMOS	0.859 GHz	0.96 GHz	500 W	17 dB	52%	48 V	Plastic
PTRA084808NF-V1			Yes	LDMOS	0.5 GHz	1 GHz	550 W	18 dB	55%	48 V	Plastic
PTRA097008NB-V1			Yes	LDMOS	0.5 GHz	1 GHz	600 W	19 dB	49%	48 V	Plastic
PTRA084858NF-V1			Yes	LDMOS	0.73 GHz	0.96 GHz	615 W	19 dB	50%	48 V	Earless
GTRB267008FC-V1			Yes	GaN on SiC	2.496 GHz	2.69 GHz	620 W	14 dB	52%	48 V	Earless
GTRB266502FC-V1			Yes	GaN on SiC	2.62 GHz	2.69 GHz	630 W	14 dB	49%	48 V	Earless
PTRA097058NB-V1			Yes	LDMOS	0.73 GHz	0.96 GHz	800 W	18 dB	48%	48 V	Plastic

Buy OnlineFind a Distributor

Knowledge Center

|

Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Continue Reading Technical Articles

|

Communications Infrastructure

Wolfspeed RF GaN meets 5G demands on PA design

Wolfspeed GaN on SiC products can replace inefficient silicon parts in 5G cellular transmitter amplifiers, achieving higher linearization, greater power density and improved thermal conductivity.

Continue Reading Technical Articles

|

Communications Infrastructure

Resolving mMIMO PA Design Challenges

Massive multiple-input-multiple output (mMIMO) system designers are being challenged to improve system efficiency. Balancing wideband linearity with efficiency is a requirement to fit the size, weight, and power requirements of mMIMO systems. View the whitepaper from Wolfspeed and Analog Devices.

Continue Reading White Paper