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Wolfspeed offers an extensive portfolio of GaN on SiC and LDMOS power transistors for use in the design of telecommunication systems supporting all global standards and frequency bands, from 450 MHz to 5 GHz and power levels to 1,000 W. Key features include high-power Doherty designs, ease of use with DPD systems, open-cavity and plastic package options, and reference designs. As 5G continues to expand and mature, we will continue to expand and explore the advantages inherent in wide bandgap GaN on SiC for designers and developers seeking better performance everywhere. With over 30 years of wide bandgap materials and product innovation enabling industry-leading devices that power more and consume less, Wolfspeed is the complete design partner for your RF needs.
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Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
PTRA084858NF-V1
New
Yes
LDMOS
0.96 GHz
19 dB
50%
48 V
Earless
Yes
LDMOS
0.96 GHz
1.6 GHz
18.5 dB
60%
50 V
Bolt Down
No
LDMOS
0.9 GHz
2.7 GHz
7.3 W
20 dB
60%
28 V
Surface Mount
Yes
GaN on SiC
DC
5 GHz
10 W
18 dB
19%
48 V
Plastic
Yes
LDMOS
0.9 GHz
2.7 GHz
12 W
20 dB
60%
28 V
Surface Mount
No
LDMOS
0.5 GHz
1.4 GHz
12 W
22 dB
62%
50 V
Surface Mount
Yes
LDMOS
1.8 GHz
2.2 GHz
20 W
30.5 dB
19%
28 V
Surface Mount
No
LDMOS
2.3 GHz
2.7 GHz
25 W
20 dB
30%
28 V
Earless
Yes
LDMOS
0.5 GHz
1.4 GHz
25 W
19 dB
64%
48 V
Surface Mount
Yes
LDMOS
0.5 GHz
1.4 GHz
25 W
18 dB
54%
50 V
Bolt Down
Yes
LDMOS
1.8 GHz
2.2 GHz
27 W
17 dB
49%
28 V
Earless
Yes
LDMOS
1.8 GHz
2.2 GHz
28 W
21 dB
29%
28 V
Earless
Yes
LDMOS
0.5 GHz
1 GHz
30 W
32 dB
19%
48 V
Surface Mount
No
LDMOS
2.3 GHz
2.7 GHz
30 W
15.5 dB
45%
28 V
Earless
Yes
LDMOS
1.8 GHz
2.2 GHz
37 W
30 dB
18.50%
28 V
Surface Mount
Yes
LDMOS
2.3 GHz
2.7 GHz
45.7 W
14 dB
44%
28 V
Earless
Yes
GaN on SiC
2.515 GHz
2.675 GHz
45 W
16 dB
57%
48 V
Surface Mount
Yes
GaN on SiC
1.8 GHz
2.2 GHz
45 W
19 dB
27%
50 V
Earless
Yes
GaN on SiC
3.4 GHz
3.8 GHz
50 W
15 dB
55%
48 V
Surface Mount
Yes
GaN on SiC
2.496 GHz
2.69 GHz
50 W
16.5 dB
57%
48 V
Plastic
Yes
LDMOS
2.3 GHz
2.7 GHz
50 W
16 dB
39%
28 V
Earless
Yes
LDMOS
2.3 GHz
2.7 GHz
50 W
19.5 dB
29%
28 V
Earless
Yes
GaN on SiC
3.7 GHz
3.98 GHz
60 W
13 dB
52%
48 V
Plastic
Yes
GaN on SiC
3.3 GHz
3.8 GHz
60 W
13.5 dB
52%
48 V
Plastic
Yes
LDMOS
1.8 GHz
2.2 GHz
63 W
27 dB
37%
28 V
Surface Mount
Yes
LDMOS
1.805 GHz
2.17 GHz
80 W
16 dB
43%
28 V
Earless
Yes
LDMOS
2.3 GHz
2.7 GHz
81 W
15.5 dB
45%
28 V
Earless
No
LDMOS
1.805 GHz
2.17 GHz
90 W
17 dB
50%
28 V
Earless
Yes
LDMOS
2.49 GHz
2.69 GHz
102 W
15 dB
49%
28 V
Earless
Yes
LDMOS
2.496 GHz
2.69 GHz
120 W
15 dB
48%
28 V
Earless
No
LDMOS
1.8 GHz
2.2 GHz
120 W
17 dB
45%
28 V
Earless
No
LDMOS
1.8 GHz
2 GHz
140 W
16 dB
44%
28 V
Earless
Yes
LDMOS
2.3 GHz
2.7 GHz
140 W
18 dB
25%
28 V
Earless
Yes
LDMOS
1.805 GHz
1.99 GHz
140 W
20.5 dB
31%
28 V
Earless
Yes
LDMOS
2.3 GHz
2.4 GHz
150 W
16.5 dB
52%
28 V
Earless
Yes
GaN on SiC
2.62 GHz
2.69 GHz
170 W
16.8 dB
43%
48 V
Earless
Yes
GaN on SiC
2.3 GHz
2.7 GHz
170 W
17 dB
43%
50 V
Earless
Yes
LDMOS
0.746 GHz
0.768 GHz
175 W
17 dB
52%
50 V
Earless
Yes
LDMOS
1.805 GHz
1.88 GHz
194 W
16.5 dB
51%
28 V
Earless
Yes
GaN on SiC
3.3 GHz
3.9 GHz
200 W
13.5 dB
42%
48 V
Earless
Yes
LDMOS
2.11 GHz
2.17 GHz
208 W
18 dB
35%
28 V
Earless
Yes
LDMOS
1.805 GHz
1.99 GHz
220 W
20.5 dB
32%
28 V
Earless
Yes
LDMOS
1.805 GHz
1.88 GHz
220 W
15 dB
51%
28 V
Earless
Yes
LDMOS
1.903 GHz
1.995 GHz
220 W
14 dB
49%
28 V
Earless
Yes
LDMOS
1.805 GHz
1.88 GHz
222 W
20 dB
36%
28 V
Earless
Yes
GaN on SiC
3.7 GHz
4.1 GHz
235 W
11.5 dB
45%
48 V
Earless
Yes
LDMOS
0.79 GHz
0.82 GHz
250 W
15.5 dB
45%
48 V
Surface Mount
Yes
GaN on SiC
2.49 GHz
2.69 GHz
250 W
14 dB
54%
48 V
Earless
Yes
LDMOS
0.746 GHz
0.96 GHz
250 W
18.5 dB
48%
48 V
Earless
Yes
LDMOS
2.3 GHz
2.7 GHz
250 W
15 dB
45%
28 V
Earless
Yes
LDMOS
0.5 GHz
1 GHz
250 W
22.5 dB
36%
48 V
Surface Mount
Yes
GaN on SiC
2.62 GHz
2.69 GHz
270 W
17 dB
42%
48 V
Earless
Yes
LDMOS
0.5 GHz
1 GHz
275 W
18 dB
56%
48 V
Surface Mount
Yes
GaN on SiC
3.3 GHz
3.9 GHz
280 W
13.5 dB
46%
48 V
Earless
No
LDMOS
2.3 GHz
2.7 GHz
280 W
18 dB
24%
28 V
Earless
Yes
LDMOS
0.5 GHz
1 GHz
287 W
22.5 dB
40%
48 V
Earless
Yes
LDMOS
2.11 GHz
2.2 GHz
290 W
16 dB
52%
28 V
Surface Mount
Yes
GaN on SiC
2.62 GHz
2.69 GHz
300 W
18 dB
39%
48 V
Earless
Yes
GaN on SiC
1.8 GHz
2.2 GHz
300 W
19 dB
38%
48 V
Earless
Yes
LDMOS
1.8 GHz
2.2 GHz
315 W
16 dB
50.50%
28 V
Surface Mount
Yes
LDMOS
1.8 GHz
2.2 GHz
320 W
16.5 dB
43.50%
28 V
Earless
Yes
LDMOS
1.88 GHz
2.025 GHz
330 W
17 dB
49%
28 V
Earless
Yes
GaN on SiC
2.3 GHz
2.7 GHz
340 W
17 dB
40%
48 V
Earless
Yes
GaN on SiC
2.495 GHz
2.69 GHz
370 W
13.8 dB
54%
48 V
Earless
Yes
LDMOS
0.5 GHz
1 GHz
370 W
17 dB
52%
48 V
Surface Mount
Yes
LDMOS
0.5 GHz
1 GHz
370 W
23.5 dB
39%
48 V
Surface Mount
Yes
LDMOS
0.5 GHz
1 GHz
380 W
18.5 dB
52%
48 V
Earless
Yes
GaN on SiC
3.3 GHz
3.9 GHz
400 W
13 dB
40%
48 V
Earless
Yes
GaN on SiC
2.5 GHz
2.7 GHz
400 W
14 dB
50%
48 V
Earless
Yes
GaN on SiC
3.6 GHz
3.8 GHz
400 W
13 dB
42%
48 V
Earless
Yes
LDMOS
2.62 GHz
2.69 GHz
400 W
13.5 dB
47%
28 V
Surface Mount
Yes
LDMOS
1.805 GHz
1.88 GHz
420 W
16 dB
51.50%
28 V
Earless
Yes
LDMOS
0.5 GHz
1 GHz
420 W
17.5 dB
53%
48 V
Surface Mount
Yes
LDMOS
1.8 GHz
2.3 GHz
436 W
16 dB
48.70%
28 V
Earless
Yes
GaN on SiC
3.6 GHz
3.7 GHz
450 W
12 dB
38%
48 V
Earless
Yes
LDMOS
0.92 GHz
0.96 GHz
460 W
17.5 dB
52%
48 V
Surface Mount
Yes
GaN on SiC
1.805 GHz
1.88 GHz
460 W
15.5 dB
60%
48 V
Earless
Yes
GaN on SiC
2.11 GHz
2.17 GHz
490 W
14.4 dB
59%
48 V
Earless
Yes
LDMOS
0.859 GHz
0.96 GHz
500 W
17 dB
52%
48 V
Earless
Yes
LDMOS
0.5 GHz
1 GHz
550 W
18 dB
55%
48 V
Surface Mount
Yes
LDMOS
0.5 GHz
1 GHz
600 W
19 dB
49%
48 V
Surface Mount
Yes
LDMOS
0.73 GHz
0.96 GHz
800 W
18 dB
48%
48 V
Earless
Product SKU
Buy Online
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
Yes
LDMOS
0.96 GHz
19 dB
50%
48 V
Earless
Yes
LDMOS
0.96 GHz
1.6 GHz
18.5 dB
60%
50 V
Bolt Down
No
LDMOS
0.9 GHz
2.7 GHz
7.3 W
20 dB
60%
28 V
Surface Mount
Yes
GaN on SiC
DC
5 GHz
10 W
18 dB
19%
48 V
Plastic
Yes
LDMOS
0.9 GHz
2.7 GHz
12 W
20 dB
60%
28 V
Surface Mount
No
LDMOS
0.5 GHz
1.4 GHz
12 W
22 dB
62%
50 V
Surface Mount
Yes
LDMOS
1.8 GHz
2.2 GHz
20 W
30.5 dB
19%
28 V
Surface Mount
No
LDMOS
2.3 GHz
2.7 GHz
25 W
20 dB
30%
28 V
Earless
Yes
LDMOS
0.5 GHz
1.4 GHz
25 W
19 dB
64%
48 V
Surface Mount
Yes
LDMOS
0.5 GHz
1.4 GHz
25 W
18 dB
54%
50 V
Bolt Down
Yes
LDMOS
1.8 GHz
2.2 GHz
27 W
17 dB
49%
28 V
Earless
Yes
LDMOS
1.8 GHz
2.2 GHz
28 W
21 dB
29%
28 V
Earless
Yes
LDMOS
0.5 GHz
1 GHz
30 W
32 dB
19%
48 V
Surface Mount
No
LDMOS
2.3 GHz
2.7 GHz
30 W
15.5 dB
45%
28 V
Earless
Yes
LDMOS
1.8 GHz
2.2 GHz
37 W
30 dB
18.50%
28 V
Surface Mount
Yes
LDMOS
2.3 GHz
2.7 GHz
45.7 W
14 dB
44%
28 V
Earless
Yes
GaN on SiC
2.515 GHz
2.675 GHz
45 W
16 dB
57%
48 V
Surface Mount
Yes
GaN on SiC
1.8 GHz
2.2 GHz
45 W
19 dB
27%
50 V
Earless
Yes
GaN on SiC
3.4 GHz
3.8 GHz
50 W
15 dB
55%
48 V
Surface Mount
Yes
GaN on SiC
2.496 GHz
2.69 GHz
50 W
16.5 dB
57%
48 V
Plastic
Yes
LDMOS
2.3 GHz
2.7 GHz
50 W
16 dB
39%
28 V
Earless
Yes
LDMOS
2.3 GHz
2.7 GHz
50 W
19.5 dB
29%
28 V
Earless
Yes
GaN on SiC
3.7 GHz
3.98 GHz
60 W
13 dB
52%
48 V
Plastic
Yes
GaN on SiC
3.3 GHz
3.8 GHz
60 W
13.5 dB
52%
48 V
Plastic
Yes
LDMOS
1.8 GHz
2.2 GHz
63 W
27 dB
37%
28 V
Surface Mount
Yes
LDMOS
1.805 GHz
2.17 GHz
80 W
16 dB
43%
28 V
Earless
Yes
LDMOS
2.3 GHz
2.7 GHz
81 W
15.5 dB
45%
28 V
Earless
No
LDMOS
1.805 GHz
2.17 GHz
90 W
17 dB
50%
28 V
Earless
Yes
LDMOS
2.49 GHz
2.69 GHz
102 W
15 dB
49%
28 V
Earless
Yes
LDMOS
2.496 GHz
2.69 GHz
120 W
15 dB
48%
28 V
Earless
No
LDMOS
1.8 GHz
2.2 GHz
120 W
17 dB
45%
28 V
Earless
No
LDMOS
1.8 GHz
2 GHz
140 W
16 dB
44%
28 V
Earless
Yes
LDMOS
2.3 GHz
2.7 GHz
140 W
18 dB
25%
28 V
Earless
Yes
LDMOS
1.805 GHz
1.99 GHz
140 W
20.5 dB
31%
28 V
Earless
Yes
LDMOS
2.3 GHz
2.4 GHz
150 W
16.5 dB
52%
28 V
Earless
Yes
GaN on SiC
2.62 GHz
2.69 GHz
170 W
16.8 dB
43%
48 V
Earless
Yes
GaN on SiC
2.3 GHz
2.7 GHz
170 W
17 dB
43%
50 V
Earless
Yes
LDMOS
0.746 GHz
0.768 GHz
175 W
17 dB
52%
50 V
Earless
Yes
LDMOS
1.805 GHz
1.88 GHz
194 W
16.5 dB
51%
28 V
Earless
Yes
GaN on SiC
3.3 GHz
3.9 GHz
200 W
13.5 dB
42%
48 V
Earless
Yes
LDMOS
2.11 GHz
2.17 GHz
208 W
18 dB
35%
28 V
Earless
Yes
LDMOS
1.805 GHz
1.99 GHz
220 W
20.5 dB
32%
28 V
Earless
Yes
LDMOS
1.805 GHz
1.88 GHz
220 W
15 dB
51%
28 V
Earless
Yes
LDMOS
1.903 GHz
1.995 GHz
220 W
14 dB
49%
28 V
Earless
Yes
LDMOS
1.805 GHz
1.88 GHz
222 W
20 dB
36%
28 V
Earless
Yes
GaN on SiC
3.7 GHz
4.1 GHz
235 W
11.5 dB
45%
48 V
Earless
Yes
LDMOS
0.79 GHz
0.82 GHz
250 W
15.5 dB
45%
48 V
Surface Mount
Yes
GaN on SiC
2.49 GHz
2.69 GHz
250 W
14 dB
54%
48 V
Earless
Yes
LDMOS
0.746 GHz
0.96 GHz
250 W
18.5 dB
48%
48 V
Earless
Yes
LDMOS
2.3 GHz
2.7 GHz
250 W
15 dB
45%
28 V
Earless
Yes
LDMOS
0.5 GHz
1 GHz
250 W
22.5 dB
36%
48 V
Surface Mount
Yes
GaN on SiC
2.62 GHz
2.69 GHz
270 W
17 dB
42%
48 V
Earless
Yes
LDMOS
0.5 GHz
1 GHz
275 W
18 dB
56%
48 V
Surface Mount
Yes
GaN on SiC
3.3 GHz
3.9 GHz
280 W
13.5 dB
46%
48 V
Earless
No
LDMOS
2.3 GHz
2.7 GHz
280 W
18 dB
24%
28 V
Earless
Yes
LDMOS
0.5 GHz
1 GHz
287 W
22.5 dB
40%
48 V
Earless
Yes
LDMOS
2.11 GHz
2.2 GHz
290 W
16 dB
52%
28 V
Surface Mount
Yes
GaN on SiC
2.62 GHz
2.69 GHz
300 W
18 dB
39%
48 V
Earless
Yes
GaN on SiC
1.8 GHz
2.2 GHz
300 W
19 dB
38%
48 V
Earless
Yes
LDMOS
1.8 GHz
2.2 GHz
315 W
16 dB
50.50%
28 V
Surface Mount
Yes
LDMOS
1.8 GHz
2.2 GHz
320 W
16.5 dB
43.50%
28 V
Earless
Yes
LDMOS
1.88 GHz
2.025 GHz
330 W
17 dB
49%
28 V
Earless
Yes
GaN on SiC
2.3 GHz
2.7 GHz
340 W
17 dB
40%
48 V
Earless
Yes
GaN on SiC
2.495 GHz
2.69 GHz
370 W
13.8 dB
54%
48 V
Earless
Yes
LDMOS
0.5 GHz
1 GHz
370 W
17 dB
52%
48 V
Surface Mount
Yes
LDMOS
0.5 GHz
1 GHz
370 W
23.5 dB
39%
48 V
Surface Mount
Yes
LDMOS
0.5 GHz
1 GHz
380 W
18.5 dB
52%
48 V
Earless
Yes
GaN on SiC
3.3 GHz
3.9 GHz
400 W
13 dB
40%
48 V
Earless
Yes
GaN on SiC
2.5 GHz
2.7 GHz
400 W
14 dB
50%
48 V
Earless
Yes
GaN on SiC
3.6 GHz
3.8 GHz
400 W
13 dB
42%
48 V
Earless
Yes
LDMOS
2.62 GHz
2.69 GHz
400 W
13.5 dB
47%
28 V
Surface Mount
Yes
LDMOS
1.805 GHz
1.88 GHz
420 W
16 dB
51.50%
28 V
Earless
Yes
LDMOS
0.5 GHz
1 GHz
420 W
17.5 dB
53%
48 V
Surface Mount
Yes
LDMOS
1.8 GHz
2.3 GHz
436 W
16 dB
48.70%
28 V
Earless
Yes
GaN on SiC
3.6 GHz
3.7 GHz
450 W
12 dB
38%
48 V
Earless
Yes
LDMOS
0.92 GHz
0.96 GHz
460 W
17.5 dB
52%
48 V
Surface Mount
Yes
GaN on SiC
1.805 GHz
1.88 GHz
460 W
15.5 dB
60%
48 V
Earless
Yes
GaN on SiC
2.11 GHz
2.17 GHz
490 W
14.4 dB
59%
48 V
Earless
Yes
LDMOS
0.859 GHz
0.96 GHz
500 W
17 dB
52%
48 V
Earless
Yes
LDMOS
0.5 GHz
1 GHz
550 W
18 dB
55%
48 V
Surface Mount
Yes
LDMOS
0.5 GHz
1 GHz
600 W
19 dB
49%
48 V
Surface Mount
Yes
LDMOS
0.73 GHz
0.96 GHz
800 W
18 dB
48%
48 V
Earless
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Knowledge Center

RF PA 101_amplifier classes image
GaN on SiC

RF Power Amplification 101: Amplifier Classes

The purpose of the RF PA is to increase the power of the RF input signal. This is achieved by applying the signal to the gate. This article compares some of the common amplifier classes, starting with the most-linear but least-efficient Class A to the still-linear (due to the ideal transistor) but more-efficient Class F and inverse-F.
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waveform-basics-header
GaN on SiC

RF Power Amplification 101: Waveform Basics

RF power is delivered by the power amplifier (PA), the final stage of amplification before the antenna, with each application placing on the PA its own set of requirements in terms of frequency, bandwidth, load, power, efficiency, and linearity. This article is the first in a series that will discuss these considerations.
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Communication Infrastructure

Wolfspeed RF on the Web: A Virtual Trade Show Experience

We’ve missed seeing you at our industry trade shows this year. Check out our virtual booth to get an in-depth look at some of Wolfspeed’s most popular rf products
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 Technical Articles
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