Features
- GaN on SiC HEMT technology
- Asymmetric Doherty design
- Main: P1dB = 20.5 W Typ
- Peak: P1dB = 35 W Typ
- Typical pulsed CW performance; 2675 MHz; 48 V
- Gain = 16.3 dB
- Efficiency = 57%
- Output power at P3dB = 44.5 W
GTRA260502M-V1
High Power RF GaN on SiC HEMT 45 W; 48 V; 2515 – 2675 MHz
NOTE: Discontinued.
The GTRA260502M is a 45-watt (P3dB) GaN on Sic high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching; high efficiency; and a thermallyenhanced; overmold package.
Products
GTRA260502M-V1
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GTRA260502M-V1
Product SKU | Buy Online | Data Sheet | Recommended For New Design? | Technology | Frequency Min | Frequency Max | P3dB Output Power | Gain | Efficiency | Operating Voltage | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|
GTRA260502M-V1 | Discontinued | GaN on SiC | 2.515 GHz | 2.675 GHz | 45 W | 16 dB | 57% | 48 V | Surface Mount |
Documents, Tools & Support
- Technical & Sales Documents
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Documents
Document Type | Document Name |
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| Application Notes | |
| Data Sheets | |
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| Sales Terms |
Knowledge Center
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