Features
- GaN on SiC HEMT technology
- Asymmetric Doherty design
- Main: P1dB = 20.5 W Typ
- Peak: P1dB = 35 W Typ
- Typical pulsed CW performance; 2675 MHz; 48 V
- Gain = 16.3 dB
- Efficiency = 57%
- Output power at P3dB = 44.5 W
Product SKU | Buy Online | Data Sheet | Recommended For New Design? | Technology | Frequency Min | Frequency Max | P3dB Output Power | Gain | Efficiency | Operating Voltage | Package Type |
---|---|---|---|---|---|---|---|---|---|---|---|
GTRA260502M-V1 | Discontinued | GaN on SiC | 2.515 GHz | 2.675 GHz | 45 W | 16 dB | 57% | 48 V | Surface Mount |
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