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GTRA260502M-V1

High Power RF GaN on SiC HEMT 45 W; 48 V; 2515 – 2675 MHz
NOTE: Discontinued.
The GTRA260502M is a 45-watt (P3dB) GaN on Sic high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching; high efficiency; and a thermallyenhanced; overmold package.

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GTRA260502M-V1

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GTRA260502M-V1

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Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
GTRA260502M-V1
Discontinued
GaN on SiC
2.515 GHz
2.675 GHz
45 W
16 dB
57%
48 V
Surface Mount
Features
  • GaN on SiC HEMT technology
  • Asymmetric Doherty design
    • Main: P1dB = 20.5 W Typ
    • Peak: P1dB = 35 W Typ
  • Typical pulsed CW performance; 2675 MHz; 48 V
    • Gain = 16.3 dB
    • Efficiency = 57%
    • Output power at P3dB = 44.5 W

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RF
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Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

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