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GTRA260502M V1

GTRA260502M-V1

High Power RF GaN on SiC HEMT 45 W; 48 V; 2515 – 2675 MHz

The GTRA260502M is a 45-watt (P3dB) GaN on Sic high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching; high efficiency; and a thermallyenhanced; overmold package.

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Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
GTRA260502M-V1
Yes
GaN on SiC
2.515 GHz
2.675 GHz
45 W
16 dB
57%
48 V
Surface Mount
Features
  • GaN on SiC HEMT technology
  • Asymmetric Doherty design
    • Main: P1dB = 20.5 W Typ
    • Peak: P1dB = 35 W Typ
  • Typical pulsed CW performance; 2675 MHz; 48 V
    • Gain = 16.3 dB
    • Efficiency = 57%
    • Output power at P3dB = 44.5 W
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RF
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Radar / Avionics

Improving Pulse Fidelity in RF Power Amplifiers

A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
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