Skip to Main Content
Contact
浏览产品 (中文)

GTRA260502M-V1

High Power RF GaN on SiC HEMT 45 W; 48 V; 2515 – 2675 MHz

The GTRA260502M is a 45-watt (P3dB) GaN on Sic high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching; high efficiency; and a thermallyenhanced; overmold package.

GTRA260502M-V1

Product SKU
Buy Online
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
GTRA260502M-V1
Yes
GaN on SiC
2.515 GHz
2.675 GHz
45 W
16 dB
57%
48 V
Surface Mount
Features
  • GaN on SiC HEMT technology
  • Asymmetric Doherty design
    • Main: P1dB = 20.5 W Typ
    • Peak: P1dB = 35 W Typ
  • Typical pulsed CW performance; 2675 MHz; 48 V
    • Gain = 16.3 dB
    • Efficiency = 57%
    • Output power at P3dB = 44.5 W

Documents

Apply Filters
Document Type
Document Name
Application Notes
Data Sheets
Product Catalog
Sales Terms
Need information?
Buy Online
Find a Distributor
Stay Informed

Knowledge Center

View All
RF
|
Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Continue Reading 
 Technical Articles

Footer

Wolfspeed Logo

Social Media

  • Facebook
  • Twitter
  • LinkedIn
  • YouTube
Copyright © 2023 Wolfspeed, Inc.