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High Power RF LDMOS FET 50 W; 28 V; 2300 – 2400 MHz
NOTE: Not recommended for new designs.

The PTAC240502FC is a 47-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency band. Features include dual-path design; input matching; high gain and thermally-enhanced package with earless flanges. Manufactured with Wolfspeed’s advanced LDMOS process; this device provides excellent thermal performance and superior reliability.

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Frequency Min
Frequency Max
P3dB Output Power
Operating Voltage
Package Type
2.3 GHz
2.7 GHz
45.7 W
14 dB
28 V
  • Input matched
  • Asymmetric Doherty design: Main P1dB = 17 W Typ; Peak P1dB = 33 W Typ
  • Typical Pulsed CW performance; 2350 MHz; 28 V; Doherty Configuration: Output power at P1dB = 45.7 W; Efficiency = 46.2%; Gain = 14.6 dB
  • Capable of handling 10:1 VSWR @28 V; 50 W (CW) output power
  • Integrated ESD protection
  • Low thermal resistance
  • Pb-free and RoHS compliant
  • Multi-standard Cellular Power Amplifiers
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Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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