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High Power RF LDMOS FET 550 W; 48 V; 734 – 821 MHz

The PTRA084808NF is a 550-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 734 to 821 MHz frequency band. Features include input matching; high gain and thermally-enhanced package with earless flanges. Manufactured with Wolfspeed’s advanced LDMOS process; this device provides excellent thermal performance and superior reliability.

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Frequency Min
Frequency Max
P3dB Output Power
Operating Voltage
Package Type
0.5 GHz
1 GHz
550 W
18 dB
48 V
  • Broadband internal matching
  • Asymmetric design: Main P1dB = 200 W typ; Peak P1dB = 350 W typ
  • Typical pulsed CW performance (class AB); 800 MHz; 48 V; Doherty configuration: Output power at P3dB = 550 W; Effi ciency = 56%; Gain = 18.5 dB
  • Capable of handling 10:1 VSWR at 48 V; 89 W (CW) output power
  • Integrated ESD protection
  • Low thermal resistance
  • Pb-free; RoHS compliant
  • Multi-standard Cellular Power Amplifiers
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Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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