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PTRA095908NB-V1

High Power RF LDMOS FET; 520 W; 48 V; 925 - 960 MHz

The PTRA095908NB is a 520-watt (P3dB) LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 925 to 960 MHz frequency band. Features include input and output matching; high gain and thermally-enhanced plastic overmold package with earless flange.

PTRA095908NB-V1

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Technology
Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
PTRA095908NB-V1
Yes
LDMOS
0.92 GHz
0.96 GHz
460 W
17.5 dB
52%
48 V
Surface Mount
Features
  • Broadband internal input and output matching
  • Asymmetric Doherty design
    • Main: P1dB = 250 W Typ
    • Peak: P1dB = 400 W Typ
  • Typical pulsed CW performance; 942 MHz; 48 V; Doherty configuration; 10 μs; 10% duty cycle
    • Output power at P1dB = 160 W
    • Output power at P3dB = 520 W
    • Efficiency = 58% (POUT = 109 W)
    • Gain = 19 dB (POUT = 109 W)

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