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PTVA082407NF-V2

High Power RF LDMOS FET 240 W; 48 V; 746 – 821 MHz

The PTVA082407NF is a 240-watt LDMOS FET manufactured withWolfspeed’s 48-V LDMOS process. It is designed for use in multi-standard cellular power amplifier applications. It features a single ended design and input matching that allow for use from 746 MHz to 821 MHz. Manufactured with Wolfspeed’s advanced LDMOS process; this device provides excellent thermal performance and superior reliability.

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Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
PTVA082407NF-V2
Yes
LDMOS
0.5 GHz
1 GHz
250 W
22.5 dB
36%
48 V
Plastic
Features
  • Broadband internal input matching
  • Typical CW performance; 755 MHz; 48 V: Output power at P1dB = 225 W; Output power at P3dB = 250 W; Gain = 20.5 dB; Efficiency = 43%
  • Capable of handling 10:1 VSWR @ 48 V; 80 W CW output power
  • Integrated ESD protection
  • Human Body Model class 2 (per ANSI/ESDA/ JEDEC JS-001)
  • Pb-free; RoHS compliant
Applications
  • Multi-standard Cellular Power Amplifiers
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RF
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Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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