PTVA120121M V1


High Power RF LDMOS FET 12 W; 50 V; 500 – 1400 MHz
NOTE: Discontinued.

The PTVA120121M LDMOS FET is a 12-watt LDMOS FET designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and a thermally-enhanced; surface-mount package. Manufactured with Wolfspeed’s advanced LDMOS process; this device provides excellent thermal performance and superior reliability.

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Frequency Min
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P3dB Output Power
Operating Voltage
Package Type
0.5 GHz
1.4 GHz
12 W
22 dB
50 V
Surface Mount
  • Unmatched
  • Target pulsed CW performance at 821 MHz; 48 V: Ouput power = 12 W P1dB; Efficiency = 62%; Gain = 22 dB
  • Capable of withstanding a 10:1 load mismatch at 50 V; 12 W (CW) output power
  • Integrated ESD protection
  • Human Body Model class 1B (per ANSI/ESDA/JEDEC JS-001)
  • Excellent thermal stability
  • Pb-free and RoHS-compliant
  • Multi-standard Cellular Power Amplifiers
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Radar / Avionics

Improving Pulse Fidelity in RF Power Amplifiers

A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
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