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PXAC210552FC V1

PXAC210552FC-V1

High Power RF LDMOS FET 55 W; 28 V; 1805 – 2170 MHz
NOTE: Not recommended for new designs.

The PXAC210552FC is a 55-watt LDMOS FET with an asymmetric design intended for use in multi-standard cellular power amplifier applications in the 1805 to 2170 MHz frequency band. It features dual-path design; input and output matching; and a thermally-enhanced package with earless flange. Manufactured with Wolfspeed’s advanced LDMOS process; this device provides excellent thermal performance and superior reliability.

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Technology
Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
PXAC210552FC-V1
No
LDMOS
1.8 GHz
2.2 GHz
27 W
17 dB
49%
28 V
Earless
Features
  • Broadband internal matching
  • Asymmetric Doherty design: Main P1dB = 20 W Typ; Peak: P1dB = 35 W Typ
  • CW performance; 2170 MHz; 26 V: Output power at P1dB = 27 W; Gain = 17 dB; Efficiency = 59%
  • Integrated ESD protection: Human Body Model; Class 1B (per ANSI/ESDA/JEDEC JS-001)
  • Capable of handling 10:1 VSWR @28 V; 55 W (CW) output power
  • Pb-free and RoHS compliant
Applications
  • Multi-standard Cellular Power Amplifiers
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Radar / Avionics

Improving Pulse Fidelity in RF Power Amplifiers

A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
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