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High Power RF LDMOS FET 55 W; 28 V; 1805 – 2170 MHz
NOTE: Not recommended for new designs.

The PXAC210552FC is a 55-watt LDMOS FET with an asymmetric design intended for use in multi-standard cellular power amplifier applications in the 1805 to 2170 MHz frequency band. It features dual-path design; input and output matching; and a thermally-enhanced package with earless flange. Manufactured with Wolfspeed’s advanced LDMOS process; this device provides excellent thermal performance and superior reliability.

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Frequency Min
Frequency Max
P3dB Output Power
Operating Voltage
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1.8 GHz
2.2 GHz
27 W
17 dB
28 V
  • Broadband internal matching
  • Asymmetric Doherty design: Main P1dB = 20 W Typ; Peak: P1dB = 35 W Typ
  • CW performance; 2170 MHz; 26 V: Output power at P1dB = 27 W; Gain = 17 dB; Efficiency = 59%
  • Integrated ESD protection: Human Body Model; Class 1B (per ANSI/ESDA/JEDEC JS-001)
  • Capable of handling 10:1 VSWR @28 V; 55 W (CW) output power
  • Pb-free and RoHS compliant
  • Multi-standard Cellular Power Amplifiers
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Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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