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PXAC210552FC-V1

High Power RF LDMOS FET 55 W; 28 V; 1805 – 2170 MHz
NOTE: Not recommended for new designs.

The PXAC210552FC is a 55-watt LDMOS FET with an asymmetric design intended for use in multi-standard cellular power amplifier applications in the 1805 to 2170 MHz frequency band. It features dual-path design; input and output matching; and a thermally-enhanced package with earless flange. Manufactured with Wolfspeed’s advanced LDMOS process; this device provides excellent thermal performance and superior reliability.

PXAC210552FC-V1

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Recommended For New Design?
Technology
Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
PXAC210552FC-V1
No
LDMOS
1.8 GHz
2.2 GHz
27 W
17 dB
49%
28 V
Earless
Features
  • Broadband internal matching
  • Asymmetric Doherty design: Main P1dB = 20 W Typ; Peak: P1dB = 35 W Typ
  • CW performance; 2170 MHz; 26 V: Output power at P1dB = 27 W; Gain = 17 dB; Efficiency = 59%
  • Integrated ESD protection: Human Body Model; Class 1B (per ANSI/ESDA/JEDEC JS-001)
  • Capable of handling 10:1 VSWR @28 V; 55 W (CW) output power
  • Pb-free and RoHS compliant
Applications
  • Multi-standard Cellular Power Amplifiers

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