Skip to Main Content
Contact
浏览产品 (中文)

PXAE261908NF-V1

High Power RF LDMOS FET 240 W,28 V, 2515 – 2675 MHz

The PXAE261908NF is a 240-watt (P3dB) LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2515 to 2675 MHz frequency band. Features include input and output matching, high gain and a thermally-enhanced package with earless flange. Manufactured with Wolfspeed’s advanced LDMOS process, this device provides excellent thermal performance and superior reliability.

Product SKU
Buy Online
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
PXAE261908NF-V1
Yes
LDMOS
2.515 GHz
2.675 GHz
240 W
13.5 dB
47%
28 V
Plastic
Features
  • Typical pulsed CW performance, 2675 MHz, 28 V
    • Output power at P1dB = 51 W
    • Output power at P3dB = 240 W
    • Gain = 11.8 dB
    • Efficiency = 60%
  • Integrated ESD protection
  • Human Body Model, Class 2 (per ANSI/ESDA/JEDEC JS-001)
  • Low thermal resistance
  • Pb-free and RoHS compliant
Apply Filters
Document Type
Document Name
Application Notes
Data Sheets
Reference Designs
Product Catalog
Sales Sheets & Flyers
Sales Terms
Need information?
Buy Online
Find a Distributor
Stay Informed

Knowledge Center

View All
RF
|
Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
Continue Reading 
 Technical Articles

Footer

Wolfspeed Logo

Social Media

  • Facebook
  • Twitter
  • LinkedIn
  • YouTube
Copyright © 2022 Wolfspeed, Inc.