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PXFE211507FC-V1

High Power RF LDMOS FET 170 W; 28 V; 2110 – 2170 MHz
NOTE: Not recommended for new designs.

The PXFE211507FC is a 170-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features include input and output matching; high gain and thermally-enhanced package with earless flange. Manufactured with Wolfspeed’s advanced LDMOS process; this device provides excellent thermal performance and superior reliability.

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Technology
Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
PXFE211507FC-V1
No
LDMOS
2.11 GHz
2.17 GHz
208 W
18 dB
35%
28 V
Earless
Features
  • Broadband internal input and output matching
  • Typical Pulsed CW performance; 2140 MHz; 28 V; single side; class AB test: Output power at P1dB = 172 W; Output power at P3dB = 208 W; Efficiency at P3dB = 64.4%; Gain = 20.3 dB
  • Capable of handling 10:1 VSWR @ 28 V; 120 W (CW) output power
  • Integrated ESD protection
  • Pb-free; RoHS compliant
Applications
  • Multi-standard Cellular Power Amplifiers
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RF
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Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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