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WSGPA01-V1

10 W; 5 GHz; GaN on SiC General Purpose Power Amplifier
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The WSGPA01 is a GaN on SiC Discrete General Purpose Amplifier (GPA) designed for applications up to 5 GHz. The device operates from supply voltages up to 50 V and can achieve a P3dB of 10 W. It is housed in a 3 mm X 4 mm DFN package. While it is designed for communications infrastructure applications with crest factor reduced and digitally pre-distorted LTE or 5G NR signals; it may be suitable for other applications at frequencies up to 5 GHz; restricted only by its maximum operating conditions.

WSGPA01-V1

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Technology
Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
WSGPA01-V1-R3K
Yes
GaN on SiC
DC
5 GHz
10 W
18 dB
19%
48 V
Surface Mount
Features
  • GaN on SiC HEMT technology
  • Operating frequency : up to 5 GHz
  • P3dB : up to 10 W
  • Supply voltage : up to 50 V
  • Pb-free and RoHS compliant
Applications
  • Multi-standard Cellular Power Amplifiers

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