Features
- GaN on SiC HEMT technology
- Operating frequency : up to 5 GHz
- P3dB : up to 10 W
- Supply voltage : up to 50 V
- Pb-free and RoHS compliant
WSGPA01-V1
10 W; 5 GHz; GaN on SiC General Purpose Power Amplifier
The WSGPA01 is a GaN on SiC Discrete General Purpose Amplifier (GPA) designed for applications up to 5 GHz. The device operates from supply voltages up to 50 V and can achieve a P3dB of 10 W. It is housed in a 3 mm X 4 mm DFN package. While it is designed for communications infrastructure applications with crest factor reduced and digitally pre-distorted LTE or 5G NR signals; it may be suitable for other applications at frequencies up to 5 GHz; restricted only by its maximum operating conditions.
Products
WSGPA01-V1
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WSGPA01-V1
Product SKU | Buy Online | Data Sheet | Recommended For New Design? | Technology | Frequency Min | Frequency Max | P3dB Output Power | Gain | Efficiency | Operating Voltage | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|
WSGPA01-V1-R3K | Yes | GaN on SiC | DC | 5 GHz | 10 W | 18 dB | 19% | 48 V | Surface Mount |
Applications
- Multi-standard Cellular Power Amplifiers
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Knowledge Center
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