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CMPA901A035

CMPA901A035

CMPA901A035
35-W; 9.0 - 10.0 GHz; 28 V; GaN MMIC for Radar Power Amplifiers

The CMPA901A035F1 is a fully matched MMIC housed in a thermally enhanced air cavity package. Operating at 28V, the device is capable of 40W of CW output power. The device can also be  operated under pulse conditions.

 

Product SKU
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Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CMPA901A035F
Yes
GaN on SiC
9 GHz
10 GHz
40 W
34 dB
35%
28 V
Packaged MMIC
Flange
CMPA901A035F-AMP
Yes
GaN on SiC
9 GHz
10 GHz
40 W
34 dB
NA
28 V
Evaluation Board
Flange
CMPA901A035F1
Yes
GaN on SiC
9 GHz
10 GHz
40 W
34 dB
38%
28 V
Packaged MMIC
Flange
Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CMPA901A035F
Yes
GaN on SiC
9 GHz
10 GHz
40 W
34 dB
35%
28 V
Packaged MMIC
Flange
CMPA901A035F-AMP
Yes
GaN on SiC
9 GHz
10 GHz
40 W
34 dB
NA
28 V
Evaluation Board
Flange
CMPA901A035F1
Yes
GaN on SiC
9 GHz
10 GHz
40 W
34 dB
38%
28 V
Packaged MMIC
Flange
Features
  • Typical Output Power 40 W
  • Typical Power Gain 23 dB
  • Typical PAE 35%
  • Operation up to 28 V
Applications
  • Military Radar
  • Marine Radar
  • Weather Radar
  • Medical Applications
Apply Filters
Document Type
Document Name
Version
Data Sheets
Version: 0.3
Data Sheets
Version: 0
Design Files
Version: 1.0
S-parameters
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Version: Design
Technical Papers & Articles
by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
Version: 1.0
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Cree – Inc. – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Version: Design
Technical Papers & Articles
by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
Version: Design
Product Catalog
Version: 1.0
Sales Terms
Version: M
Document Type
Document Name
Version
Data Sheets
Version: 0.3
Data Sheets
Version: 0
Design Files
Version: 1.0
S-parameters
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Version: Design
Technical Papers & Articles
by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
Version: 1.0
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Cree – Inc. – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Version: Design
Technical Papers & Articles
by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
Version: Design
Product Catalog
Version: 1.0
Sales Terms
Version: M
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