Skip to Main Content
浏览产品 (中文)


Wideband LDMOS Two-stage Integrated Power Amplifier 20 W + 40 W; 28 V; 1805 – 2200 MHz

The PTNC210604MD is a wideband; two-stage; LDMOS integrated power amplifier. It incorporates internal matching for operation from 1805 to 2200 MHz; and dual independent outputs with 20 W and 40 W of output power each. It is available in a 14-lead plastic overmold package with gull wing leads.

Product SKU
Buy Online
Data Sheet
Recommended For New Design?
Frequency Min
Frequency Max
P3dB Output Power
Operating Voltage
Package Type
1.8 GHz
2.2 GHz
63 W
27 dB
28 V
Surface Mount
  • On-chip matching for broadband operation
  • Typical CW performance; 2200 MHz; 28 V; combined outputs: Output power at P3dB = 63 W; Linear Gain = 28 dB; Efficiency = 50.5%
  • Capable of handling 10:1 VSWR @28 V; 10 W mod avg output power
  • Integrated ESD protection
  • Integrated temperature compensation
  • Pb-free and RoHS compliant
  • Multi-standard Cellular Power Amplifiers
Apply Filters
Document Type
Document Name
Application Notes
Data Sheets
Reference Designs
Product Catalog
Sales Sheets & Flyers
Sales Terms
Need information?
Buy Online
Find a Distributor
Stay Informed

Knowledge Center

View All
Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
Continue Reading 
 Technical Articles


Wolfspeed Logo

Social Media

  • Facebook
  • Twitter
  • LinkedIn
  • YouTube
Copyright © 2022 Wolfspeed, Inc.