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PTRA097058NB-V1

High Power RF LDMOS FET; 800 W; 48 V; 730 – 960 MHz

The PTRA097058NB is a 800-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in the 730 to 960 MHz frequency band. Features include input and output matching; high gain and thermally-enhanced package with earless flanges. Manufactured with Wolfspeed’s advanced LDMOS process; this device provides excellent thermal performance and superior reliability.

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Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
PTRA097058NB-V1
Yes
LDMOS
0.73 GHz
0.96 GHz
800 W
18 dB
48%
48 V
Plastic
Features
  • Broadband internal input and output matching
  • Asymmetric design
    • Main: P1dB = 250 W typical
    • Peak: P1dB = 500 W typical
  • Typical pulsed CW performance; 960 MHz; 48 V; 10 μs; 10% duty cycle; class AB test; Doherty configuration
    • Output power at P1dB = 630 W
    • Output power at P3dB = 800 W
    • Efficiency = 55%
    • Gain = 19 dB
  • Integrated ESD protection
Applications

Multi-standard cellular power amplifiers

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RF
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Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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