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Peak Output Power 100W (P1dB)
Application Telecom
Typical Power (PSAT) 16
Operating Voltage 28 V
Frequency 1.8 - 2.2 GHz
Package Type Earless
Efficiency 45 %
Gain 17 dB
Technology LDMOS

High Power RF LDMOS FET
120 W, 28 V, 1800 – 2200 MHz

SKU: PXAC201202FC-V2


The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it ideal for Doherty amplifier designs. It features input and output matching, and a thermally-enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.

Features

  • Broadband internal input and output matching
  • Asymmetric Doherty design
    • Main: P1dB = 35 W Typ
    • Peak: P1dB = 80 W Typ
  • Broadband internal matching
  • CW performance in a Doherty configuration, 1805 MHz, 28 V
    • Output power = 100 W P1dB
    • Gain = 17.3 dB at 17.8 W Avg
    • Efficiency = 46% at 17.8 W Avg
  • CW performance in a Doherty configuration, 2100 MHz, 28 V
    • Output power = 15.8 W Avg
    • Gain = 15.5 dB
    • Efficiency = 46%
  • Capable of handling 10:1 VSWR @ 28 V, 16 W (CW) output power
  • Integrated ESD protection: Human Body Model, Class 1C (per JESD22-A114)
  • Low thermal resistance
  • Pb-free and RoHS compliant

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