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PXAD184218FV-V1

High Power RF LDMOS FET 420 W; 28 V; 1805 – 1880 MHz
NOTE: Not recommended for new designs.

The PXAD184218FV is a 420-watt (P3dB) LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include dual-path design; input and output matching; high gain and thermally-enhanced package with earless flanges. Manufactured with Wolfspeed’s advanded LDMOS process; this device provides excellent thermal performance and superior reliability.

PXAD184218FV-V1

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Recommended For New Design?
Technology
Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
PXAD184218FV-V1
No
LDMOS
1.805 GHz
1.88 GHz
420 W
16 dB
51.5%
28 V
Earless
Features
  • Broadband internal input and output matching
  • Asymmetrical Doherty design: Main P1dB = 130 W Typ; Peak P1dB = 290 W Typ
  • Typical Pulsed CW performance; 1842.5 MHz; 28 V; Doherty configuration: Output power at P3dB = 420 W; Efficiency = 62%; Gain = 14 dB
  • Capable of handling 10:1 VSWR @ 28 V; 110 W (WCDMA) output power
  • Integrated ESD protection
  • Pb-free; RoHS compliant
Applications
  • Multi-standard Cellular Power Amplifiers

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