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PXAD184218FV V1

PXAD184218FV-V1

High Power RF LDMOS FET 420 W; 28 V; 1805 – 1880 MHz
NOTE: Not recommended for new designs.

The PXAD184218FV is a 420-watt (P3dB) LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include dual-path design; input and output matching; high gain and thermally-enhanced package with earless flanges. Manufactured with Wolfspeed’s advanded LDMOS process; this device provides excellent thermal performance and superior reliability.

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Technology
Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
PXAD184218FV-V1
No
LDMOS
1.805 GHz
1.88 GHz
420 W
16 dB
51.50%
28 V
Earless
Features
  • Broadband internal input and output matching
  • Asymmetrical Doherty design: Main P1dB = 130 W Typ; Peak P1dB = 290 W Typ
  • Typical Pulsed CW performance; 1842.5 MHz; 28 V; Doherty configuration: Output power at P3dB = 420 W; Efficiency = 62%; Gain = 14 dB
  • Capable of handling 10:1 VSWR @ 28 V; 110 W (WCDMA) output power
  • Integrated ESD protection
  • Pb-free; RoHS compliant
Applications
  • Multi-standard Cellular Power Amplifiers
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Radar / Avionics

Improving Pulse Fidelity in RF Power Amplifiers

A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
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