Skip to Main Content
Contact
浏览产品 (中文)

PXFE211507FC-V1

High Power RF LDMOS FET 170 W; 28 V; 2110 – 2170 MHz
NOTE: Not recommended for new designs.

The PXFE211507FC is a 170-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features include input and output matching; high gain and thermally-enhanced package with earless flange. Manufactured with Wolfspeed’s advanced LDMOS process; this device provides excellent thermal performance and superior reliability.

PXFE211507FC-V1

Product SKU
Buy Online
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
PXFE211507FC-V1
No
LDMOS
2.11 GHz
2.17 GHz
208 W
18 dB
35%
28 V
Earless
Features
  • Broadband internal input and output matching
  • Typical Pulsed CW performance; 2140 MHz; 28 V; single side; class AB test: Output power at P1dB = 172 W; Output power at P3dB = 208 W; Efficiency at P3dB = 64.4%; Gain = 20.3 dB
  • Capable of handling 10:1 VSWR @ 28 V; 120 W (CW) output power
  • Integrated ESD protection
  • Pb-free; RoHS compliant
Applications
  • Multi-standard Cellular Power Amplifiers

Documents

Apply Filters
Document Type
Document Name
Application Notes
Data Sheets
Reference Designs
Product Catalog
Sales Sheets & Flyers
Sales Terms
Need information?
Buy Online
Find a Distributor
Stay Informed

Knowledge Center

View All
RF
|
Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Continue Reading 
 Technical Articles

Footer

Wolfspeed Logo

Social Media

  • Facebook
  • Twitter
  • LinkedIn
  • YouTube
Copyright © 2023 Wolfspeed, Inc.