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Peak Output Power 200W
Application Satellite Communications
Typical Power Added Efficiency PAE 33 %
Typical Power (PSAT) 180 W
Power Gain 13 dB Minimum
Operating Voltage 40 V
Frequency 4.4 - 5.0 GHz
Package Type Flange
Internal Matching Yes - 50Ω

200-W, 4400 - 5000-MHz, 50-Ohm Input/Output-Matched, GaN HEMT


Wolfspeed’s CGHV50200F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV50200F ideal for troposcatter communications, 4.4 - 5.0-GHz C-Band SatCom applications and beyond line of sight. The transistor is supplied in a ceramic/metal flange package, type 440215.



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