- EV On-Board Charger
- EV Fast Charging
CRD-22DD12N

- Peak efficiencies of 98.5% in both charging and discharging mode
- Power densities of 8kW/L
Specifications
Charging Mode
- Output Voltage : 480V-800V DC Nominal. System capable of 200V-800V DC
- At Vin=650V-900V DC ; Output Power : 22kW ; Output current : 36A
- At Vin=380V-900V DC ; Output Power : 6.6kW ; Output current : 26.4A
Discharging Mode
- Output Voltage : 360V-750V DC Nominal
- Output Power : 6.6kW ; Output current : 19A
- Full bridge CLLC resonant converter operating at 135-250kHz
- Tooled heatsink to simulate cooling plate
- CAN interface
Reference Design Files for
- Main board
- Controller Board
- Aux
- Firmware and GUI
- Mechanical Specifications
Documents, Tools & Support
- Block Diagram
- Technical & Sales Documents
- Tools & Support

2W Isolated DC-DC Converter Vin=15V, Vout= -3V/15V
2W Isolated DC-DC Converter Vin=15V, Vout= -3V/15V
5A, High Voltage, Isolated Gate Driver with Internal Miller Clamp for Q1, Q2, Q3, Q4, Q7, Q16, Q17, Q18
5A, High Voltage, Isolated Gate Driver with Internal Miller Clamp for Q1, Q2, Q3, Q4, Q7, Q16, Q17, Q18
MCU with control algorithms for the AC-DC and DC-DC Stages

Silicon Carbide Power 1200V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode

Silicon Carbide Power 1200V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode

Silicon Carbide Power 1200V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode

Silicon Carbide Power 1200V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode

Silicon Carbide Power 1200V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode

Silicon Carbide Power 1200V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode

Silicon Carbide Power 1200V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode

Silicon Carbide Power 1200V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode