Licensing
Licensing Wolfspeed's GaN Power Device Patents
Wolfspeed’s GaN power technology is available for licensing. A list of patents that may contain claims that are included in the program are listed below; corresponding foreign counterparts are also included. Contact Wolfspeed at licensing@wolfspeed.com for further information.
US Patent Number | Issue Date | Full Title |
|---|---|---|
6,316,793 | 13 Nov 2001 | Nitride based transistors on semi-insulating silicon carbide substrates |
6,475,889 | 05 Nov 2002 | Method of forming vias in silicon carbide and resulting devices and circuits |
6,486,502 | 26 Nov 2002 | Nitride based transistors on semi-insulating silicon carbide substrates |
6,515,303 | 04 Feb 2003 | Method of forming vias in silicon carbide and resulting devices and circuits |
6,548,333 | 15 Apr 2003 | Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment |
6,586,781 | 01 Jul 2003 | Group III nitride based FETs and HEMTs with reduced trapping and method for producing the same |
6,649,497 | 18 Nov 2003 | Method of forming vias in silicon carbide and resulting devices and circuits |
6,727,531 | 27 Apr 2004 | Indium gallium nitride channel high electron mobility transistors, and method of making the same |
6,777,278 | 17 Aug 2004 | Methods of fabricating aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment |
6,849,882 | 01 Feb 2005 | Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer |
6,946,739 | 20 Sep 2005 | Method of forming vias in silicon carbide and resulting devices and circuits |
6,982,204 | 03 Jan 2006 | Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses |
7,030,428 | 18 Apr 2006 | Strain balanced nitride heterojunction transistors |
7,045,404 | 16 May 2006 | Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof |
7,125,786 | 24 Oct 2006 | Method of forming vias in silicon carbide and resulting devices and circuits |
7,170,111 | 30 Jan 2007 | Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same |
7,230,284 | 12 Jun 2007 | Insulating gate AlGaN/GaN HEMT |
7,238,560 | 03 Jul 2007 | Methods of fabricating nitride-based transistors with a cap layer and a recessed gate |
7,253,454 | 07 Aug 2007 | High electron mobility transistor |
7,265,399 | 04 Sep 2007 | Asymetric layout structures for transistors and methods of fabricating the same |
7,326,971 | 05 Feb 2008 | Gallium nitride based high-electron mobility devices |
7,332,795 | 19 Feb 2008 | Dielectric passivation for semiconductor devices |
7,364,988 | 29 Apr 2008 | Method of manufacturing gallium nitride based high-electron mobility devices |
7,419,892 | 02 Sep 2008 | Semiconductor devices including implanted regions and protective layers and methods of forming the same |
7,432,142 | 07 Oct 2008 | Methods of fabricating nitride-based transistors having regrown ohmic contact regions |
7,456,443 | 25 Nov 2008 | Transistors having buried n-type and p-type regions beneath the source region |
7,465,967 | 16 Dec 2008 | Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions |
7,501,669 | 10 Mar 2009 | Wide bandgap transistor devices with field plates |
7,544,963 | 09 Jun 2009 | Binary group III-nitride based high electron mobility transistors |
7,550,783 | 23 Jun 2009 | Wide bandgap HEMTs with source connected field plates |
7,550,784 | 23 Jun 2009 | Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses |
7,573,078 | 11 Aug 2009 | Wide bandgap transistors with multiple field plates |
7,592,211 | 22 Sep 2009 | Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides |
7,612,390 | 03 Nov 2009 | Heterojunction transistors including energy barriers |
7,615,774 | 10 Nov 2009 | Aluminum free group III-nitride based high electron mobility transistors |
7,638,818 | 28 Dec 2009 | Robust transistors with fluorine treatment |
7,678,628 | 16 Mar 2010 | Methods of fabricating nitride-based transistors with a cap layer and a recessed gate |
7,692,263 | 06 Apr 2010 | High voltage GaN transistors |
7,709,269 | 04 May 2010 | Transistors including supported gate electrodes |
7,709,859 | 04 May 2010 | Cap layers including aluminum nitride for nitride-based transistors |
7,745,851 | 29 Jun 2010 | Polytype hetero-interface high electron mobility device and method of making |
7,812,369 | 12 Oct 2010 | Fabrication of single or multiple gate field plates |
7,855,401 | 21 Dec 2010 | Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides |
7,875,537 | 25 Jan 2011 | High temperature ion implantation of nitride based HEMTs |
7,892,974 | 22 Feb 2011 | Method of forming vias in silicon carbide and resulting devices and circuits |
7,893,500 | 22 Feb 2011 | High voltage GaN transistors |
7,901,994 | 08 Mar 2011 | Methods of manufacturing group III nitride semiconductor devices with silicon nitride layers |
7,906,799 | 15 Mar 2011 | Nitride-based transistors with a protective layer and a low-damage recess |
7,915,644 | 29 Mar 2011 | Wide bandgap HEMTs with source connected field plates |
7,919,791 | 05 Apr 2011 | Doped group III-V nitride materials, and microelectronic devices and device precursor structures comprising same |
7,928,475 | 19 Apr 2011 | Wide bandgap transistor devices with field plates |
7,955,918 | 07 Jun 2011 | Robust transistors with fluorine treatment |
7,960,756 | 14 Jun 2011 | Methods of fabricating transistors including dielectrically-supported gate electrodes |
7,985,986 | 26 Jul 2011 | Normally-off semiconductor devices |
8,049,252 | 01 Nov 2011 | Methods of fabricating transistors including dielectrically-supported gate electrodes and related devices |
8,049,252 | 01 Nov 2011 | Methods of fabricating transistors including dielectrically supported gate electrodes and related devices |
8,105,889 | 31 Jan 2012 | Methods of fabricating transistors including self-aligned gate electrodes and source/drain regions |
8,120,064 | 21 Feb 2012 | Wide bandgap transistor devices with filed plates |
8,153,515 | 10 Apr 2012 | Methods of fabricating strain balanced nitride heterojunction transistors |
8,169,005 | 01 May 2012 | High voltage GaN transistors |
8,174,089 | 08 May 2012 | High voltage switching devices and process for forming same |
8,198,178 | 12 Jun 2012 | Methods of fabrication normally-off semiconductor devices |
8,202,796 | 19 Jun 2012 | Method of forming vias in silicon carbide and resulting devices and circuits |
8,203,185 | 19 Jun 2012 | Semiconductor devices having varying electrode widths to provide non-uniform gate pitches and related methods |
8,212,289 | 03 Jul 2012 | Group III nitride field effect transistors (FETs) capable of withstanding high temperature reverse bias test conditions |
8,212,290 | 03 Jul 2012 | High temperature performance capable GaN transistor |
8,216,924 | 10 Jul 2012 | Methods of fabricating transistors using laser annealing of source/drain regions |
8,274,159 | 25 Sep 2012 | Group III nitride based flip chip integrated circuit and method for fabricating |
8,283,699 | 09 Oct 2012 | GaN based HEMTs with buried field plates |
8,330,244 | 11 Dec 2012 | Semiconductor devices including Schottky diodes having doped regions arranged as islands and methods of fabricating same |
8,344,398 | 01 Jan 2013 | Low voltage diodes with reduced parasitic resistance and method for fabricating |
8,357,571 | 22 Jan 2013 | Methods of forming semiconductor contacts and related semiconductor devices |
8,357,996 | 22 Jan 2013 | Devices with crack stops |
8,390,101 | 05 Mar 2013 | High voltage switching devices and process for forming same |
8,421,122 | 16 Apr 2013 | High power gallium nitride field effect transistor switches |
8,432,012 | 30 Apr 2013 | Semiconductor devices including Schottky diodes having overlapping doped regions and methods of fabricating same |