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Licensing Wolfspeed's GaN Power Device Patents

Wolfspeed’s GaN power technology is available for licensing. A list of patents that may contain claims that are included in the program are listed below; corresponding foreign counterparts are also included. Contact Wolfspeed at licensing@wolfspeed.com for further information.

US Patent Number
Issue Date
Full Title
6,316,793
13 Nov 2001
Nitride based transistors on semi-insulating silicon carbide substrates
6,475,889
05 Nov 2002
Method of forming vias in silicon carbide and resulting devices and circuits
6,486,502
26 Nov 2002
Nitride based transistors on semi-insulating silicon carbide substrates
6,515,303
04 Feb 2003
Method of forming vias in silicon carbide and resulting devices and circuits
6,548,333
15 Apr 2003
Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment
6,586,781
01 Jul 2003
Group III nitride based FETs and HEMTs with reduced trapping and method for producing the same 
6,649,497
18 Nov 2003
Method of forming vias in silicon carbide and resulting devices and circuits
6,727,531
27 Apr 2004
Indium gallium nitride channel high electron mobility transistors, and method of making the same 
6,777,278
17 Aug 2004
Methods of fabricating aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment
6,849,882
01 Feb 2005
Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer
6,946,739
20 Sep 2005
Method of forming vias in silicon carbide and resulting devices and circuits
6,982,204
03 Jan 2006
Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses
7,030,428
18 Apr 2006
Strain balanced nitride heterojunction transistors
7,045,404
16 May 2006
Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof
7,125,786
24 Oct 2006
Method of forming vias in silicon carbide and resulting devices and circuits
7,170,111
30 Jan 2007
Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same
7,230,284
12 Jun 2007
Insulating gate AlGaN/GaN HEMT
7,238,560
03 Jul 2007
Methods of fabricating nitride-based transistors with a cap layer and a recessed gate
7,253,454
07 Aug 2007
High electron mobility transistor 
7,265,399
04 Sep 2007
Asymetric layout structures for transistors and methods of fabricating the same
7,326,971
05 Feb 2008
Gallium nitride based high-electron mobility devices
7,332,795
19 Feb 2008
Dielectric passivation for semiconductor devices
7,364,988
29 Apr 2008
Method of manufacturing gallium nitride based high-electron mobility devices 
7,419,892
02 Sep 2008
Semiconductor devices including implanted regions and protective layers and methods of forming the same
7,432,142
07 Oct 2008
Methods of fabricating nitride-based transistors having regrown ohmic contact regions 
7,456,443
25 Nov 2008
Transistors having buried n-type and p-type regions beneath the source region
7,465,967
16 Dec 2008
Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions
7,501,669
10 Mar 2009
Wide bandgap transistor devices with field plates
7,544,963
09 Jun 2009
Binary group III-nitride based high electron mobility transistors
7,550,783
23 Jun 2009
Wide bandgap HEMTs with source connected field plates 
7,550,784
23 Jun 2009
Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses
7,573,078
11 Aug 2009
Wide bandgap transistors with multiple field plates
7,592,211
22 Sep 2009
Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides 
7,612,390
03 Nov 2009
Heterojunction transistors including energy barriers
7,615,774
10 Nov 2009
Aluminum free group III-nitride based high electron mobility transistors
7,638,818
28 Dec 2009
Robust transistors with fluorine treatment 
7,678,628
16 Mar 2010
Methods of fabricating nitride-based transistors with a cap layer and a recessed gate
7,692,263
06 Apr 2010
High voltage GaN transistors
7,709,269
04 May 2010
Transistors including supported gate electrodes 
7,709,859
04 May 2010
Cap layers including aluminum nitride for nitride-based transistors
7,745,851
29 Jun 2010
Polytype hetero-interface high electron mobility device and method of making
7,812,369
12 Oct 2010
Fabrication of single or multiple gate field plates
7,855,401
21 Dec 2010
Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides
7,875,537
25 Jan 2011
High temperature ion implantation of nitride based HEMTs
7,892,974
22 Feb 2011
Method of forming vias in silicon carbide and resulting devices and circuits
7,893,500
22 Feb 2011
High voltage GaN transistors
7,901,994
08 Mar 2011
Methods of manufacturing group III nitride semiconductor devices with silicon nitride layers
7,906,799
15 Mar 2011
Nitride-based transistors with a protective layer and a low-damage recess
7,915,644
29 Mar 2011
Wide bandgap HEMTs with source connected field plates
7,919,791
05 Apr 2011
Doped group III-V nitride materials, and microelectronic devices and device precursor structures comprising same
7,928,475
19 Apr 2011
Wide bandgap transistor devices with field plates
7,955,918
07 Jun 2011
Robust transistors with fluorine treatment 
7,960,756
14 Jun 2011
Methods of fabricating transistors including dielectrically-supported gate electrodes
7,985,986
26 Jul 2011
Normally-off semiconductor devices
8,049,252
01 Nov 2011
Methods of fabricating transistors including dielectrically-supported gate electrodes and related devices
8,049,252
01 Nov 2011
Methods of fabricating transistors including dielectrically supported gate electrodes and related devices
8,105,889
31 Jan 2012
Methods of fabricating transistors including self-aligned gate electrodes and source/drain regions
8,120,064
21 Feb 2012
Wide bandgap transistor devices with filed plates
8,153,515
10 Apr 2012
Methods of fabricating strain balanced nitride heterojunction transistors
8,169,005
01 May 2012
High voltage GaN transistors
8,174,089
08 May 2012
High voltage switching devices and process for forming same
8,198,178
12 Jun 2012
Methods of fabrication normally-off semiconductor devices
8,202,796
19 Jun 2012
Method of forming vias in silicon carbide and resulting devices and circuits
8,203,185
19 Jun 2012
Semiconductor devices having varying electrode widths to provide non-uniform gate pitches and related methods
8,212,289
03 Jul 2012
Group III nitride field effect transistors (FETs) capable of withstanding high temperature reverse bias test conditions
8,212,290
03 Jul 2012
High temperature performance capable GaN transistor
8,216,924
10 Jul 2012
Methods of fabricating transistors using laser annealing of source/drain regions
8,274,159
25 Sep 2012
Group III nitride based flip chip integrated circuit and method for fabricating
8,283,699
09 Oct 2012
GaN based HEMTs with buried field plates
8,330,244
11 Dec 2012
Semiconductor devices including Schottky diodes having doped regions arranged as islands and methods of fabricating same
8,344,398
01 Jan 2013
Low voltage diodes with reduced parasitic resistance and method for fabricating
8,357,571
22 Jan 2013
Methods of forming semiconductor contacts and related semiconductor devices
8,357,996
22 Jan 2013
Devices with crack stops
8,390,101
05 Mar 2013
High voltage switching devices and process for forming same
8,421,122
16 Apr 2013
High power gallium nitride field effect transistor switches
8,432,012
30 Apr 2013
Semiconductor devices including Schottky diodes having overlapping doped regions and methods of fabricating same
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