Materials
ICSCRM 2025
September 14 - 19 in Busan, South Korea
Join us at the International Conference on Silicon Carbide and Related Materials (ICSCRM) 2025
Where: Busan, South Korea
When: Sunday, September 14th - Friday, September 19th
How to find us: BEXCO Exhibition Center 1, Hall 1, Booth 204
Growing Quality at Scale
As a pioneer in silicon carbide, we are leading the industry’s transition to the 200mm n-type wafers with an intense focus on continuous improvement, unwavering quality and cost reduction. We are confident that with years of experience, our passion and the best technology we will succeed in achieving our goal of becoming the undisputed global leader delivering premium quality silicon carbide.
Stop by our booth to witness firsthand the progress we have made in delivering high-quality production-ready 200mm n-type wafers.
Support
Join us for the following presentations
Topic | Presenter(s) | Date | Time | Location | Type |
|---|---|---|---|---|---|
Introduction to Silicon Carbide Power Devices: Power MOSFETs, IGBTs, and GTO Thyristors | Sei-Hyung Ryu | Sunday, September 14 | 1:00 PM - 2:00 PM (GMT+9) | Convention Hall 1F | Tutorial - Short Course |
Investigation of the P-body effect on Reverse Recovery and Static Characteristics of 1.2 kV 4H-SiC Power MOSFET | Jeff Kim | Monday, September 15 | 2:15 PM - 6:00 PM (GMT+9) | Exhibition Hall 1, 1F | Poster Presentation |
Electrical Properties of 4H-SiC MOSFETs on Non-Polar Faces with Various Surface Treatments | Woongsun Kim | Monday, September 15 | 2:15 PM - 6:00 PM (GMT+9) | Exhibition Hall 1, 1F | Poster Presentation |
Wolfspeed Industrial Session - Materials | Tom Barbieri | Monday, September 15 | 8:05 PM - 8:10 PM (GMT+9) | Convention Hall A, 1F | Industrial Session |
Study of interface traps and scattering mechanisms in 4H-SiC MOS channel using gated Hall measurements | Daniel Lichtenwalner | Tuesday September 16 | 9:45 AM - 11:30 AM (GMT+9) | Convention Hall 1F | Oral Presentation |
TCAD modeling of temperature dependent transfer characteristics of 4H-SiC Lateral MOSFETs | Hemant Dixit | Tuesday September 16 | 4:30 PM - 6:30 PM (GMT+9) | Exhibition Hall 1, 1F | Poster Presentation |
Insight into Bias-Temperature Instability of SiC MOSFETs using Charge Pumping and Triple-Sense Threshold Measurements | Shane Stein | Wednesday, September 17 | 9:45 AM - 11:30 AM (GMT+9) | Convention Hall 1F | Oral Presentation |
Enhanced Gate Oxide Reliability in Vertical SiC Power MOSFETs via Optimized Screening | Ayan Biswas | Friday, September 19 | 10:30 AM - 12:00 PM (GMT+9) | Convention Hall C, 1F | Oral Presentation |