Materials
ICSCRM 2026
September 27 - October 2 in Yokohama, Japan
Join us at the International Conference on Silicon Carbide and Related Materials (ICSCRM) 2026
Where: Yokohama, Japan
When: Sunday, September 27th - Friday, October 2nd
How to find us: PACIFICO YOKOHAMA North, Booth I-2
Growing Quality at Scale
As a pioneer in silicon carbide, we are leading the industry’s transition to the 200mm n-type wafers with an intense focus on continuous improvement, unwavering quality and cost reduction. We are confident that with years of experience, our passion and the best technology we will succeed in achieving our goal of becoming the undisputed global leader delivering premium quality silicon carbide.
Stop by our booth to witness firsthand the progress we have made in delivering high-quality production-ready 200mm n-type wafers.
Support
Join us for the following presentations
Topic | Presenter(s) | Date | Time | Location | Presentation Type |
|---|---|---|---|---|---|
3D vs. 2D TCAD: The Right Choice for Simulating 4H-SiC MOSFETs? | Hemant Dixit | Monday, September 28 | 1:00 PM - 3:00 PM | Poster B - 4th Floor, G401+G402 | Poster |
Analytical Method for Parameter Extraction From Hall Measurement Data in Aluminum Implanted SiC Test Structures | Edmund Banghart | Monday, September 28 | 1:00 PM - 3:00 PM | Poster B - 4th Floor, G401+G402 | Poster |
Physics-based Compact Model of SiC Power MOSFET for Process Corner Analysis | Arman Ur Rashid | Monday, September 28 | 1:00 PM - 3:00 PM | Poster B - 4th Floor, G401+G402 | Poster |
Investigation and Improvement of the Trade Off Between Reverse Recovery and Conduction Performance in SiC MOSFETs | Jeff Kim | Tuesday, September 29 | 8:40 AM - 10:20 AM | Oral A - 1st Floor, G7+G8 | Oral |
Experimental and Theoretical Study of P-Channel Mobility Including Temperature and Active Body Bias Effects in 4H-SiC MOSFETs | Hemant Dixit | Tuesday, September 29 | 4:00 PM - 6:00 PM | Poster C - 4th Floor, G403+G404 | Poster |
Investigation of Drain-Induced Threshold Voltage Instability in 1200V SiC MOSFETs and Superiority of Trench MOSFET | Woongsun Kim | Tuesday, September 29 | 4:00 PM - 6:00 PM | Poster B - 4th Floor, G401+G402 | Poster |
Impact of Distributed Gate Resistance on Switching Dynamics in a Segmented 4H-SiC MOSFET Model | Jae Park | Wednesday, September 30 | 10:30 AM - 12:20 PM | Oral A - 1st Floor, G7+G8 | Oral |
Thick Epitaxy on 200mm Silicon Carbide for Ultra-High Voltage Devices | Thomas Kuhr | Wednesday, September 30 | 2:00 PM - 2:30 PM | Oral-B - 3rd Floor, G303+G304 | Invited |
High Voltage MOS Devices in 4H-SiC: From Lab to Reality | Sei-Hyung Ryu | Wednesday, September 30 | 2:00 PM - 3:50 PM | Oral A - 1st Floor, G7+G8 | Invited |
Characterization of Trench Sidewall Channel Mobility in 4H-SiC using Lateral Trench MOSFETs | Woongsun Kim | Wednesday, September 30 | 4:00 PM - 6:00 PM | Poster B - 4th Floor, G401+G402 | Poster |
Split C-V Measurements for the Separate Extraction of Interface Trap Density and Fixed Charge in (0001) 4H-SiC MOSFETs | Shane Stein | Thursday, October, 01 | 1:30 PM - 2:50 PM | Oral A - 1st Floor, G7+G8 | Oral |
Edge Termination Optimization in 1200V 4H-SiC Devices | Naeem Islam | Thursday, October, 01 | 3:00 PM - 5:00 PM | Poster B - 4th Floor, G401+G402 | Poster |
Temperature-Dependent Gated Hall Measurements of 4H-SiC Planar MOSFETs and Coulomb Scattering Effects on Mobility | Dan Lichtenwalner | Friday, October 2 | 2:00 PM - 3:30 PM | Oral A - 1st Floor, G7+G8 | Oral |