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SiC Materials
Silicon Carbide for Power Electronics
Keeping Pace with the World's Demand for SiC Power
Industry-Leading Flexibility and Scale
With more than 30 years of silicon carbide (SiC) development and manufacturing experience, Wolfspeed produces the industry’s broadest range of SiC materials. Offering n-type conductive SiC products and a variety of SiC epitaxy options, Wolfspeed delivers the quality and quantity necessary to support the rapidly expanding demand for high-efficiency, SiC power semiconductors.
When you partner with Wolfspeed, you get the best and most innovative materials.
Materials Portfolio
Polytype
- 4H
Surface Orientation
- 4° Off-axis
Supported Diameters
- 150 mm
- 200 mm
SiC Epitaxy
- n-type
- p-type
- Thick epitaxy
Conductive SiC Substrate Product Descriptions
The Materials Business Unit produces a wide assortment of n-type conductive SiC products. Wolfspeed's industry-leading, high-volume platform process provides our customers with the highest degree of material quality, supply assurance and economies of scale.
Part Number | Description |
|---|---|
W4NRG4C-C1-U200 | 4H-SiC, n-type, Research Grade, 150mm, 4° Off-Axis, 0.015-0.028 Ω-cm, Ultra Low MPD ≤1/cm2, 350um Thick w/ 47.5mm Flat, Double-Sided Polish Si Face CMP Epi Ready, Bare Substrate |
W4NPG4C-C1-U200 | 4H-SiC, n-type, Production Grade, 150mm, 4° Off-Axis, 0.015-0.028 Ω-cm, Ultra Low MPD ≤1/cm2, 350um Thick w/ 47.5mm Flat, Double-Sided Polish Si Face CMP Epi Ready, Bare Substrate |
W4NPG4C-C1-B200 | 4H-SiC, n-type, Production Grade, 150mm, 4° Off-Axis, 0.015-0.028 Ω-cm, Ultra Low MPD ≤1/cm2, Low BPD ≤1500/cm2, 350um Thick w/ 47.5mm Flat, Double-Sided Polish Si Face CMP Epi Ready, Bare Substrate |
W4NPH4A-N1-0200 | 4H-SiC, n-type, Production Grade, 200mm, 4° off-axis, 0.015-0.025 Ω-cm, 350μm Thick w/ Notch, Double-Sided Polish Silicon Face CMP Epi Ready, Bare Substrate |
Dimensional Properties, Terminology and Measurements
Flat Length | Linear dimension of the flat measured with automated optical micrometer. |
Primary Flat | The flat of the longest length on the wafer, oriented such that the chord is parallel with a specified low-index crystal plane. |
Primary Flat Orientation | The primary flat is the (1100) plane with the flat face parallel to the [1120] direction. |
Notch | The notch position is parallel to the [1120] direction, with the notch bisector in the (1100) plane. |
Marking | For silicon face polished material, the carbon face of each individual wafer is laser-marked with OCR-compatible font, similar to definitions and characteristics in SEMI M12. The laser markings are positioned upright when the major flat or notch is oriented up, making the scribe easier to read when the wafers are loaded into cassettes. This format includes a wafer supplier identification code, validating the wafer’s authenticity. It also includes a checksum, which is an error-detection method that prevents OCR mis-read errors and reduces the instance of processing errors associated with such events. |
SiC Epitaxy Product Descriptions
Wolfspeed produces n-type and p-type SiC epitaxial layers on SiC substrates, and has the widest range of available layer thickness from sub-micron to >200μm. Unless noted otherwise on the product quotation, the epitaxial layer structure will meet or exceed the following specifications. Additional comments, terms and conditions may be found in the specification document.
Substrate Orientation: SiC Epitaxy is available only for off-axis substrates
Conductivity | n-type | p-type |
|---|---|---|
Dopant | Nitrogen | Aluminum |
Net doping density | ND-NA | NA-ND |
Silicon face | 5E14 – 1E19/cm3 | 5E14 – 1E20/cm3 |
Tolerance | ±20% | ±50% |
Thickness range | 0.2 - 200 microns | 0.2 - 200 microns |
Tolerance | ±8% of selected thickness | ±10% of selected thickness |
Contact Wolfspeed Materials Sales for specification on multi-layer or custom epitaxy requests
SiC Epitaxy Product Specifications
Characteristics | Maximum Acceptability Limits | Test Methods | Defect Definitions | Methodology |
|---|---|---|---|---|
Scratches | cumulative scratch length ≤150 mm | Diffuse Illumination | D1 | M1,M2 |
Backside cleanliness | 95% clean | Diffuse Illumination | D2 | M1,M2 |
Edge chips | See Substrate Specifications | Diffuse Illumination | D3 | M2 |
Epi defects* | <3/cm3 | Lasertec SICA | D4-D5 | M3 |
Net doping | See Product Description table | CV | - | M4 |
Thickness | See Product Description table | FTIR | - | M5 |
*Note: 3mm edge exclusion, <70μm thickness