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SiC Materials

Silicon Carbide for Power Electronics

  • Conductive SiC Substrate
  • SiC Epitaxy
  • Conductive SiC Substrate
  • SiC Epitaxy

Keeping Pace with the World's Demand for SiC Power

Industry-Leading Flexibility and Scale
With more than 30 years of silicon carbide (SiC) development and manufacturing experience, Wolfspeed produces the industry’s broadest range of SiC materials. Offering n-type conductive SiC products and a variety of SiC epitaxy options, Wolfspeed delivers the quality and quantity necessary to support the rapidly expanding demand for high-efficiency, SiC power semiconductors.

When you partner with Wolfspeed, you get the best and most innovative materials.

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Materials Portfolio

Polytype

  • 4H

Surface Orientation

  • 4° Off-axis

Supported Diameters

  • 150 mm
  • 200 mm

SiC Epitaxy

  • n-type
  • p-type
  • Thick epitaxy

Conductive SiC Substrate Product Descriptions

The Materials Business Unit produces a wide assortment of n-type conductive SiC products. Wolfspeed's industry-leading, high-volume platform process provides our customers with the highest degree of material quality, supply assurance and economies of scale.

Part Number
Description
W4NRG4C-C1-U200
4H-SiC, n-type, Research Grade, 150mm, 4° Off-Axis, 0.015-0.028 Ω-cm, Ultra Low MPD ≤1/cm2, 350um Thick w/ 47.5mm Flat, Double-Sided Polish Si Face CMP Epi Ready, Bare Substrate
W4NPG4C-C1-U200
4H-SiC, n-type, Production Grade, 150mm, 4° Off-Axis, 0.015-0.028 Ω-cm, Ultra Low MPD ≤1/cm2, 350um Thick w/ 47.5mm Flat, Double-Sided Polish Si Face CMP Epi Ready, Bare Substrate
W4NPG4C-C1-B200
4H-SiC, n-type, Production Grade, 150mm, 4° Off-Axis, 0.015-0.028 Ω-cm, Ultra Low MPD ≤1/cm2, Low BPD ≤1500/cm2, 350um Thick w/ 47.5mm Flat, Double-Sided Polish Si Face CMP Epi Ready, Bare Substrate
W4NPH4A-N1-0200
4H-SiC, n-type, Production Grade, 200mm, 4° off-axis, 0.015-0.025 Ω-cm, 350μm Thick w/ Notch, Double-Sided Polish Silicon Face CMP Epi Ready, Bare Substrate

Dimensional Properties, Terminology and Measurements

Flat Length
Linear dimension of the flat measured with automated optical micrometer.​
Primary Flat
The flat of the longest length on the wafer, oriented such that the chord is parallel with a specified low-index crystal plane.
Primary Flat Orientation
The primary flat is the (1100) plane with the flat face parallel to the [1120] direction.
Notch
The notch position is parallel to the [1120] direction, with the notch bisector in the (1100) plane.
Marking
For silicon face polished material, the carbon face of each individual wafer is laser-marked with OCR-compatible font, similar to definitions and characteristics in SEMI M12. The laser markings are positioned upright when the major flat or notch is oriented up, making the scribe easier to read when the wafers are loaded into cassettes. This format includes a wafer supplier identification code, validating the wafer’s authenticity. It also includes a checksum, which is an error-detection method that prevents OCR mis-read errors and reduces the instance of processing errors associated with such events.

SiC Epitaxy Product Descriptions

Wolfspeed produces n-type and p-type SiC epitaxial layers on SiC substrates, and has the widest range of available layer thickness from sub-micron to >200μm. Unless noted otherwise on the product quotation, the epitaxial layer structure will meet or exceed the following specifications. Additional comments, terms and conditions may be found in the specification document.

Substrate Orientation: SiC Epitaxy is available only for off-axis substrates

Conductivity
n-type
p-type
Dopant
Nitrogen
Aluminum
‎  Net doping density
ND-NA
NA-ND
  Silicon face
5E14 – 1E19/cm3
5E14 – 1E20/cm3
  Tolerance
±20%
±50%
Thickness range
0.2 - 200 microns
0.2 - 200 microns
  Tolerance
±8% of selected thickness
±10% of selected thickness

Contact Wolfspeed Materials Sales for specification on multi-layer or custom epitaxy requests

SiC Epitaxy Product Specifications

Characteristics
Maximum Acceptability Limits
Test Methods
Defect Definitions
Methodology
Scratches
cumulative scratch length ≤150 mm
Diffuse
Illumination
D1
M1,M2
Backside cleanliness
95% clean
Diffuse
Illumination
D2
M1,M2
Edge chips
See Substrate Specifications
Diffuse
Illumination
D3
M2
Epi defects*
<3/cm3
Lasertec SICA
D4-D5
M3
Net doping
See Product Description table
CV
-
M4
Thickness
See Product Description table
FTIR
-
M5

*Note: 3mm edge exclusion, <70μm thickness

Tools & Support

Conductive Silicon Carbide Substrates and Epitaxy
Materials Catalog
Materials Document Library
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Knowledge Center

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Design Resources

Key Testing Considerations for Migrating from Silicon (Si) to Silicon Carbide (SiC) in Power Designs

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