With more than 30 years of development and manufacturing experience, Wolfspeed is driving innovation with the industry’s broadest range of silicon carbide (SiC) and gallium nitride (GaN) materials. Delivering semi-insulating substrates and nitride epitaxy options up to the newly available diameter of 150mm, Wolfspeed materials enable performance far exceeding that of any other technology, for telecom, aerospace, or defense applications with world-leading bandwidth, efficiency and frequency of operation.
When you partner with Wolfspeed, you get the best and most innovative materials.
The Materials Business Unit produces a wide assortment of n-type conductive SiC products. Wolfspeed's industry-leading, high-volume platform process provides our customers with the highest degree of material quality, supply assurance and economies of scale.
Part Number | Description |
|---|---|
W4TRF0R-0200 | 4H-SiC, HPSI, Research Grade, 100mm, On-Axis, ≥1E6 Ω-cm, Standard MPD, 500µm Thick w/ 32.5mm Flat, Double-Sided Polish Si Face CMP Epi Ready, Bare Substrate |
W4TPF0R-0200 | 4H-SiC, HPSI, Production Grade, 100mm, On-Axis, ≥1E6 Ω-cm, Standard MPD, 500µm Thick w/ 32.5mm Flat, Double-Sided Polish Si Face CMP Epi Ready, Bare Substrate |
W4TRG0R-N-0200 | 4H-SiC, HPSI, Research Grade, 150mm, On-Axis, ≥1E6 Ω-cm, Standard MPD, 500µm Thick w/ Notch, Double-Sided Polish Si Face CMP Epi Ready, Bare Substrate |
W4TPG0R-N-0200 | 4H-SiC, HPSI, Production Grade, 150mm, On-Axis, ≥1E6 Ω-cm, Standard MPD, 500µm Thick w/ Notch, Double-Sided Polish Si Face CMP Epi Ready, Bare Substrate |
Wolfspeed’s High Purity Semi-Insulating wafers are not vanadium-doped
Flat Length | Linear dimension of the flat measured with automated optical micrometer. |
Primary Flat | The flat of the longest length on the wafer, oriented such that the chord is parallel with a specified low-index crystal plane. Not applicable to 150mm wafers. |
Primary Flat Orientation | The primary flat is the (1100) plane with the flat face parallel to the [1120] direction. |
Secondary Flat | A flat of shorter length than the primary flat, whose position with respect to the primary flat identifies the face of the wafer. Not applicable to 150mm wafers. |
Secondary Flat Orientation | The secondary flat is 90˚ clockwise from the primary flat, +/-5˚, referencing the silicon face up. |
100 mm HPSI Marking | HPSI products are silicon face polished, and the carbon face of each individual wafer is laser-marked with OCR-compatible font, similar to definitions and characteristics in SEMI T5 specifications. For 100mm wafers, the laser markings are centered when the primary flat is oriented down. |
150 mm HPSI Marking | HPSI products are silicon face polished, and the carbon face of each individual wafer is laser-marked with OCR-compatible font, similar to definitions and characteristics in SEMI M12. The laser markings are offset right when looking at the carbon face with the notch oriented down. |
Wolfspeed produces GaN, AlxGa1-xN and Al1-yInyN epitaxial layers on SiC substrates. Unless noted otherwise on the product quotation, the epitaxial layer structure will meet or exceed the following specifications (1). Contact Wolfspeed Materials Sales for specification on custom epitaxy requests. Additional comments, terms and conditions may be found in the specification document.
Property | Value or Range | Precision | Measurement Technique |
|---|---|---|---|
Substrate | On-axis SiC (Semi-Insulating) | - | - |
Composition (2) | AlxGa1-xN or Al1-yInyN 0 ≤ x ≤ 0.3, 0 ≤ y ≤ 0.2, certain restrictions apply | Δ x = ± 0.015 Δ y = ± 0.02 | XRD peak splitting |
Thickness (3) | 1.0 μm to 3.0 μm GaN 0.5 nm to 1.0 μm AlN 1.0 nm to 1.0 μm AlxGa1-xN 1.0 nm to 1.0 μm Al1-yInyN 2.0 nm to 5.0 nm GaN (Cap Layer) 5.0 nm to 100 nm SiN (Cap Layer) | Average thickness within ± 15% of target thickness and uniformity <10%. (4) | X-ray or white light interferometry |
GaN Crystallinity | < 250 arcsec (3 μm layer on SiC substrate) | - | XRD (0006) FWHM (center point) |
Al0.25Ga0.75N | < 500 arcsec (3 μm layer on SiC substrate) | - | XRD (0006) FWHM (center point) (5) |
Visible Defects | < 50/cm2 | - | Differential interference microscopy at 50x in cross pattern with 5 mm edge exclusion |
Property | Value or Range | Precision | Measurement Technique |
|---|---|---|---|
Dopant type | n-type (Si) HEMT buffer (Fe and/or C) | - | - |
Carrier concentration (unintentionally doped) | < 1E16/cm3, n-type | - | CV |
Carrier concentration (n-type, Si doped) | 1E16 to 2E19/cm3 | ± 50% | CV (wafer center, room temperature) |
Carrier concentration of HEMT structure | >8E12/cm2 (25 nm Al0.25Ga0.75N) | - | Contactless non-destructive carrier concentration |
Mobility of HEMT structure | μ ≥ 1500 cm2 V-1 s-1 (25 nm Al0.25Ga0.75N) | - | Contactless non-destructive mobility |
Sheet resistivity | < 2% uniformity | - | Contactless non-destructive sheet resistivity |
Notes:
