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  • Bare Die Silicon Carbide MOSFETs
  • 1200 V Automotive Qualified Bare Die Silicon Carbide MOSFETs – Gen 4
  • EM4E120-032D10​

EM4E120-032D10​

1200 V, 9.6 mΩ, Gen 4, Automotive qualified, Bare Die SiC MOSFET
Product rendering of three Wolfspeed Silicon Carbide Bare Die MOSFETs.
  • Overview
  • Parametric Data
  • Order Details
  • Product Details
  • Tools & Support
  • Overview
  • Parametric Data
  • Order Details
  • Product Details
  • Tools & Support

Parametric Data

Display All SKUs in Product Family (4)
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Product SKU
Buy Online
Data Sheet
Status
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Gate Charge Total
Output Capacitance
Reverse Recovery Charge (Qrr)
Reverse Recovery Time (Trr)
Tjmax
Generation
Qualification
EM4E120-032D10​
Active
1200 V
9.6 mΩ
202 A
317 nC
259 pF
2184 nC
45 ns
185 °C
Gen 4
Automotive

Ordering & Compliance

EM4E120-032D10​ Ordering

Part Number
EM4E120-032D10​
Order Status
Active
Buy Online
Container Type
Available in Film Frame and Tape & Reel

EM4E120-032D10​ Compliance

Halogen Free
Yes
Lead Free
Yes
RoHS Declaration
Download
REACH Declaration
Download
California Prop 65
Learn More
ECCN
EAR99

Product Details

Features

  • Automotive Qualified
  • High blocking voltage with industry leading low RDS(on) over temperature stability
  • Resistant to latch-up
  • High gate resistance for drives
  • High capacitance ratio

Benefits

  • Improves System Efficiency with lower switching and conduction losses
  • Reduces System Size, Weight, and Cooling Requirements
  • Enables high switching frequency operation
  • Easy to parallel and compatible with standard gate drive design

Typical Applications

  • Automotive Drivetrain
  • Motor Drives
  • Solid State Circuit Breaker
  • Resonant Topologies

Documents, Tools & Support

  • Technical & Sales Documents
  • Tools & Support
  • Compliance

Documents

12 Documents Available
Document Type
Document Name
Last Updated
Application Notes
PRD-04814: Design Options for Wolfspeed® Silicon Carbide MOSFET Gate Bias Power Supplies
01/2025
Application Notes
PRD-08937: Impact of VGS on SiC MOSFET Characteristics
11/2024
Application Notes
PRD-07969: Sintering Considerations and the Die Top System
04/2024
Application Notes
PRD-08296: SiC MOSFET Short Circuit Events
11/2023
Application Notes
PRD-06933: Capacitance Ratio and Parasitic Turn-on
01/2023
White Papers
Designed to Last, Even in the Harshest Environments
New
11/2025
White Papers
Enhancing System Durability with Advanced Packaging for Silicon Carbide
11/2025
White Papers
SiC Power Module Reliability: Wolfspeed’s Power Cycling and Lifetime Modeling Approach
New
11/2025
Product Catalog
Power Product Line Card
01/2025
Sales Sheets & Flyers
Wolfspeed Silicon Carbide Solutions for EV Inverters
03/2022
Sales Terms
Wolfspeed, Inc. Sales Terms and Conditions
04/2025
Packing & Shipping
Power Product Packing & Shipping Reference Guide
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs.
11/2025

Knowledge Center

View All

SiC Power Module Reliability: Wolfspeed’s Power Cycling and Lifetime Modeling Approach

Continue Reading  White Paper

Enhancing System Durability with Advanced Packaging for Silicon Carbide (SiC)

Continue Reading  White Paper

Driven by Partnerships: Turning Automotive Challenges into Breakthroughs 

Continue Reading  Thought Leadership

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