Wolfspeed's Gen 5 SiC MOSFETs are engineered for real-world performance — not just ideal conditions. Built on optimized planar MOSFET design, Gen 5 achieves better RDS(ON) through tightened epitaxy, increased active area, and enhanced soft body diode technology. The result: lower losses, higher reliability, and greater design confidence for automotive and industrial applications.
第四代1200 V 车规级裸芯片碳化硅 MOSFET
Wolfspeed 推出第四代1200 V 车规级碳化硅裸芯片 MOSFET 系列 。
这是Wolfspeed 推出的第四代高性能碳化硅 MOSFET，采用无封装裸芯片设计，可灵活集成于各类定制模块中。凭借高阻断电压、低导通电阻、高速开关及低电容等卓越特性，该器件成为汽车动力总成系统与电机驱动应用的理想解决方案。
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产品SKU | 在线购买 | 数据手册 | Status | 阻断电压 | 导通电阻 RDS(ON) @ 25°C | 额定电流 | 输出电容 | 反向恢复电荷 (Qrr) | 反向恢复时间 (Trr) | 最高结点温度 | 代际 | 认证 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Active | 1200 V | 9.6 mΩ | 202 A | 259 pF | 2184 nC | 45 ns | 185 °C | Gen 4 | Automotive | |||
Active | 1200 V | 11.4 mΩ | 166 A | 203 pF | 512 nC | 17 ns | 185 °C | Gen 4 | Automotive | |||
Active | 1200 V | 11.6 mΩ | 166 A | 220 pF | 700 nC | 31 ns | 185 °C | Gen 4 | Automotive | |||
Active | 1200 V | 12.5 mΩ | 159 A | 206 pF | 1180 nC | 40 ns | 185 °C | Gen 4 | Automotive | |||
Active | 1200 V | 13 mΩ | 149 A | 210 pF | 1133 nC | 33 ns | 185 °C | Gen 4 | Automotive |
知识中心
随着人工智能规模的不断扩展，人们越来越关注上游电力资源能否跟上快速扩张的数据中心部署需求。Amperesand 正通过开发高可靠性、中电压、碳化硅基固态变压器，助力构建未来电网的基石。阅读更多内容，了解 Amperesand 与 Wolfspeed 如何携手实现这一目标。