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  • Bare Die Silicon Carbide MOSFETs
  • 1700 V Industrial Qualified Bare Die Silicon Carbide MOSFETs – Gen 3
  • EPM3-1700-0900A

EPM3-1700-0900A

1700 V, 3.9 A, Gen 3 Bare Die SiC MOSFET
Product rendering of three Wolfspeed Silicon Carbide Bare Die MOSFETs.
  • Overview
  • Parametric Data
  • Order Details
  • Product Details
  • Tools & Support
  • Overview
  • Parametric Data
  • Order Details
  • Product Details
  • Tools & Support

Parametric Data

Display All SKUs in Product Family (2)

1700 V Industrial Qualified Bare Die Silicon Carbide MOSFETs – Gen 3

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1700 V Industrial Qualified Bare Die Silicon Carbide MOSFETs – Gen 3

Product SKU
Buy Online
Data Sheet
Status
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Gate Charge Total
Output Capacitance
Reverse Recovery Charge (Qrr)
Reverse Recovery Time (Trr)
Tjmax
Generation
Qualification
EPM3-1700-0900A
New
Active
1700 V
900 mΩ
3.9 A
10 nC
8 pF
72 nC
40 ns
175 °C
Gen 3
Automotive

End of Section

Ordering & Compliance

EPM3-1700-0900A Ordering

Order StatusActive
Buy Online
Container TypeAvailable in Film Frame and Tape & Reel

EPM3-1700-0900A Compliance

Halogen FreeYes
Lead FreeYes
RoHS Declaration
Download
REACH Declaration
Download
California Prop 65Learn More
ECCN
EAR99

Product Details

Features

  • Enhanced 3rd Generation SiC MOSFET
  • High blocking voltage with low on-resistance
  • High speed switching with low capacitance
  • Fast intrinsic diode with low reverse recovery

Benefits

  • Improves System Efficiency with lower switching and conduction losses
  • Reduces System Size, Weight, and Cooling Requirements
  • Enables high switching frequency operation
  • Easy to parallel and compatible with standard gate drive design

Applications

  • Auxiliary Power Supplies
  • OBC & DC/DC Converters
  • Solar – Residential Applications

Documents, Tools & Support

Display All SKUs in Product Family (2)
  • Technical & Sales Documents
  • Tools & Support
  • Compliance

Documents

7 Documents Available
Document Type
Document Name
Last Updated
Application Notes
PRD-09129: Mitigating Package Induced Failures
New
05/2025
Application Notes
PRD-08937: Impact of VGS on SiC MOSFET Characteristics
New
01/2025
Application Notes
PRD-07969: Sintering Considerations and the Die Top System
04/2024
Application Notes
PRD-08296: SiC MOSFET Short Circuit Events
11/2023
Application Notes
PRD-06933: Capacitance Ratio and Parasitic Turn-on
01/2023
Sales Sheets & Flyers
Wolfspeed Silicon Carbide Solutions for EV Inverters
03/2022
Sales Terms
Wolfspeed, Inc. Sales Terms and Conditions
04/2025

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Design Resources

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