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Product rendering of a Wolfspeed Silicon Carbide Bare Die Schottky diode.
1700 V, 5 A, Gen 6 Bare Die SiC Schottky Diode
6th generation of high voltage, high performance Z-Rec© Silicon Carbide (SiC) Schottky diode in a packageless bare die format to be implemented into any custom module design The lower forward voltage, smaller reverse leakage current, zero reverse recovery, and high thermal conductivity make this schottky diode ideal for high frequency switching applications including high density DC to DC converters. This schottky diode can be used in conjunction with either IGBT or MOSFET as an anti-parallel diode, or as a rectifier.


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1700 V Bare Die Silicon Carbide Schottky Diodes

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1700 V Bare Die Silicon Carbide Schottky Diodes

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Data Sheet
Blocking Voltage
Current Rating
Total Capacitive Charge (QC (typ))
Maximum Junction Temperature
1700 V
5 A
79 nC
175 °C
Gen 6

Product Details

  • Zero Reverse Recovery
  • Zero Forward Recovery
  • High-Frequency Operation
  • Temperature-Independent Switching Behavior
  • Extremely Fast Switching
  • Positive Temperature Coefficient on VF
  • Improves System Efficiency with lower switching and conduction losses
  • Reduces System Size, Weight, and Cooling Requirements
  • Enables high switching frequency operation
  • Easy to parallel and compatible with standard gate drive design
  • Solar Inverters
  • Motor Drives
  • EV Chargers
  • UPS
  • Industrial Power Supplies

Documents, Tools & Support

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This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
Sales Terms
Technical SupportPower Applications Forum

Knowledge Center

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