- Zero Reverse Recovery
- Zero Forward Recovery
- High-Frequency Operation
- Temperature-Independent Switching Behavior
- Extremely Fast Switching
- Positive Temperature Coefficient on VF
6th generation of high voltage, high performance Z-Rec© Silicon Carbide (SiC) Schottky diode in a packageless bare die format to be implemented into any custom module design
The lower forward voltage, smaller reverse leakage current, zero reverse recovery, and high thermal conductivity make this schottky diode ideal for high frequency switching applications including high density DC to DC converters. This schottky diode can be used in conjunction with either IGBT or MOSFET as an anti-parallel diode, or as a rectifier.
Total Capacitive Charge (QC (typ))
Maximum Junction Temperature
Recommended For New Design?
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs