Features
- Zero Reverse Recovery
- Zero Forward Recovery
- High-Frequency Operation
- Temperature-Independent Switching Behavior
- Extremely Fast Switching
- Positive Temperature Coefficient on VF
1700 V Bare Die Silicon Carbide Schottky Diodes
CPW6-1700-Z050A
1700 V; 50 A; Gen 6 Bare Die Silicon Carbide (SiC) Schottky Diode
6th generation of high voltage, high performance Z-Rec© Silicon Carbide (SiC) Schottky diode in a packageless bare die format to be implemented into any custom module design
The lower forward voltage, smaller reverse leakage current, zero reverse recovery, and high thermal conductivity make this schottky diode ideal for high frequency switching applications including high density DC to DC converters. This schottky diode can be used in conjunction with either IGBT or MOSFET as an anti-parallel diode, or as a rectifier.
Products
1700 V Bare Die Silicon Carbide Schottky Diodes
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1700 V Bare Die Silicon Carbide Schottky Diodes
Product SKU | Buy Online | Data Sheet | Blocking Voltage | Current Rating | Total Capacitive Charge (QC (typ)) | Maximum Junction Temperature | Generation | Recommended For New Design? |
|---|---|---|---|---|---|---|---|---|
CPW6-1700-Z050A New | 1700 V | 50 A | 479 nC | 175 °C | Gen 6 | Yes |
Product Details
Benefits
- Improves System Efficiency with lower switching and conduction losses
- Reduces System Size, Weight, and Cooling Requirements
- Enables high switching frequency operation
- Easy to parallel and compatible with standard gate drive design
Applications
- Solar Inverters
- Motor Drives
- EV Chargers
- UPS
- Industrial Power Supplies
Documents, Tools & Support
- Technical & Sales Documents
- Tools & Support
- Compliance
Documents
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Document Type | Document Name |
|---|---|
| Data Sheets | |
| Sales Terms | This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
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| Sales Terms |
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