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CPW6-1700-Z050A

CPW6-1700-Z050A
1700 V, 50 A, Gen 6 Bare Die SiC Schottky Diode
6th generation of high voltage, high performance Z-Rec© Silicon Carbide (SiC) Schottky diode in a packageless bare die format to be implemented into any custom module design The lower forward voltage, smaller reverse leakage current, zero reverse recovery, and high thermal conductivity make this schottky diode ideal for high frequency switching applications including high density DC to DC converters. This schottky diode can be used in conjunction with either IGBT or MOSFET as an anti-parallel diode, or as a rectifier.

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1700 V Bare Die Silicon Carbide Schottky Diodes

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1700 V Bare Die Silicon Carbide Schottky Diodes

Product SKU
Buy Online
Data Sheet
Blocking Voltage
Current Rating
Total Capacitive Charge (QC (typ))
Maximum Junction Temperature
Generation
Recommended For New Design?
CPW6-1700-Z050A
1700 V
50 A
479 nC
175 °C
Gen 6
Yes

Product Details

Features
  • Zero Reverse Recovery
  • Zero Forward Recovery
  • High-Frequency Operation
  • Temperature-Independent Switching Behavior
  • Extremely Fast Switching
  • Positive Temperature Coefficient on VF
Benefits
  • Improves System Efficiency with lower switching and conduction losses
  • Reduces System Size, Weight, and Cooling Requirements
  • Enables high switching frequency operation
  • Easy to parallel and compatible with standard gate drive design
Applications
  • Solar Inverters
  • Motor Drives
  • EV Chargers
  • UPS
  • Industrial Power Supplies

Documents, Tools & Support

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Documents

Document Type
Document Name
Last Updated
Data Sheets
04/2022
Sales Terms
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
02/2024
Sales Terms
12/2021
Technical SupportPower Applications Forum

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