Wolfspeed’s 650 V Silicon Carbide (SiC) Schottky diode technology is optimized for high-performance power electronics applications; including server power supplies; electric vehicle charging systems; energy storage systems; solar (PV) inverters; and consumer electronics.
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Blocking Voltage | Current Rating | Generation | Forward Voltage(VF(type)) | Maximum Continuous Current (IF) | Total Capacitive Charge (QC (typ)) | Total Power Dissipation (PTOT) | Package | Qualification | Recommended For New Design? |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
C6D10065A | 650 V | 10 A | Gen 6 | 1.27 V | 10 A | 35 nC | 109 W | TO-220-2 | Industrial | Yes |
Document Type | Document Name |
|---|---|
| Application Notes | |
| Application Notes | |
| Data Sheets | |
| Technical Papers & Articles | by Zachary D. Schwartz and George E. Ponchak – A SiC Clapp oscillator fabricated on an alumina substrate with chip capacitors and spiral inductors is designed for high temperature operation at 1 GHz. The oscillator operated from 30 to 200 ºC with an output power of 21.8 dBm at 1 GHz and 200 ºC. The efficiency at 200 ºC is 15 %. The frequency variation over the temperature range is less than 0.5 %.
|
| Product Catalog | |
| Sales Sheets & Flyers | |
| Sales Sheets & Flyers | |
| Sales Terms | |
| Sales Terms | This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
|
