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650 V Discrete Silicon Carbide Schottky Diodes

650 V Discrete Silicon Carbide Schottky Diodes

Discrete Silicon Carbide Schottky Diodes 650V Discrete Silicon Carbide Schottky Diodes family image with TO-247-3, TO-252-2, TO-263-2 and TO-220-2 packages
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Wolfspeed’s Silicon Carbide (SiC) 650 V Schottky Diode technology is optimized for high-performance power electronics applications; including server power supplies; electric vehicle charging systems; energy storage systems; solar (PV) inverters; and consumer electronics.

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Data Sheet
Blocking Voltage
Current Rating
Generation
Forward Voltage(VF(type))
Maximum Continuous Current (IF)
Total Capacitive Charge (QC (typ))
Total Power Dissipation (PTOT)
Package
Qualification
Recommended For New Design?
C3D02065E
650 V
2 A
Gen 3
1.5 V
2 A
4.8 nC
39.5 W
TO-252-2
Industrial
Yes
C3D03065E
650 V
3 A
Gen 3
1.5 V
3 A
6.7 nC
53 W
TO-252-2
Industrial
Yes
C6D04065A
650 V
4 A
Gen 6
1.27 V
4 A
16 nC
73 W
TO-220-2
Industrial
Yes
C6D04065E
650 V
4 A
Gen 6
1.27 V
4 A
16 nC
52 W
TO-252-2
Industrial
Yes
C3D04065A
650 V
4 A
Gen 3
1.5 V
4 A
10 nC
52 W
TO-220-2
Industrial
Yes
C3D04065E
650 V
4 A
Gen 3
1.5 V
4 A
8.5 nC
75 W
TO-252-2
Industrial
Yes
C6D06065G
650 V
6 A
Gen 6
1.27 V
6 A
22 nC
73 W
TO-263-2
Industrial
Yes
C6D06065A
650 V
6 A
Gen 6
1.27 V
6 A
23 nC
73 W
TO-220-2
Industrial
Yes
C6D06065E
650 V
6 A
Gen 6
1.27 V
6 A
23 nC
68 W
TO-252-2
Industrial
Yes
C6D06065Q
New
650 V
6 A
Gen 6
1.27 V
6 A
23 nC
69 W
QFN
Industrial
Yes
C3D06065I
650 V
6 A
Gen 3
1.5 V
6 A
15 nC
45.5 W
TO-220 Isolated
Industrial
Yes
C3D06065A
650 V
6 A
Gen 3
1.5 V
6 A
15 nC
88 W
TO-220-2
Industrial
Yes
C3D06065E
650 V
6 A
Gen 3
1.5 V
6 A
15 nC
100 W
TO-252-2
Industrial
Yes
C6D08065G
650 V
8 A
Gen 6
1.27 V
8 A
29 nC
92 W
TO-263-2
Industrial
Yes
C6D08065A
650 V
8 A
Gen 6
1.27 V
8 A
29 nC
92.6 W
TO-220-2
Industrial
Yes
C6D08065E
650 V
8 A
Gen 6
1.27 V
8 A
29 nC
85 W
TO-252-2
Industrial
Yes
C6D08065Q
New
650 V
8 A
Gen 6
1.27 V
8 A
29 nC
92 W
QFN
Industrial
Yes
E3D08065G
650 V
8 A
Gen 3
1.5 V
8 A
176 W
TO-263-2
Automotive
Yes
C3D08065I
650 V
8 A
Gen 3
1.5 V
8 A
21 nC
48 W
TO-220 Isolated
Industrial
Yes
C3D08065A
650 V
8 A
Gen 3
1.5 V
8 A
20 nC
107 W
TO-220-2
Industrial
Yes
C3D08065E
650 V
8 A
Gen 3
1.5 V
8 A
20 nC
120 W
TO-252-2
Industrial
Yes
C6D10065G
650 V
10 A
Gen 6
1.27 V
10 A
34 nC
108 W
TO-263-2
Industrial
Yes
C6D10065A
650 V
10 A
Gen 6
1.27 V
10 A
35 nC
109 W
TO-220-2
Industrial
Yes
C6D10065E
650 V
10 A
Gen 6
1.27 V
10 A
34 nC
99 W
TO-252-2
Industrial
Yes
C6D10065Q
New
650 V
10 A
Gen 6
1.27 V
10 A
34 nC
119 W
QFN
Industrial
Yes
C3D10065E
650 V
10 A
Gen 3
1.5 V
10 A
24 nC
150 W
TO-252-2
Industrial
Yes
C3D10065I
650 V
10 A
Gen 3
1.5 V
10 A
25 nC
60 W
TO-220 Isolated
Industrial
Yes
C3D10065A
650 V
10 A
Gen 3
1.5 V
10 A
24 nC
136.5 W
TO-220-2
Industrial
Yes
C3D12065A
650 V
12 A
Gen 3
1.5 V
12 A
34 nC
143 W
TO-220-2
Industrial
Yes
C6D16065D
650 V
16 A
Gen 6
1.27 V
16 A
29 nC
100 W
TO-247-3
Industrial
Yes
C3D16065D1
650 V
16 A
Gen 3
1.5 V
16 A
40 nC
173 W
TO-247-3
Industrial
Yes
C3D16065A
650 V
16 A
Gen 3
1.5 V
16 A
44 nC
150 W
TO-220-2
Industrial
Yes
C3D16065D
650 V
16 A
Gen 3
1.5 V per leg
16 A
21 nC per leg
200 W
TO-247-3
Industrial
Yes
C6D20065D
650 V
20 A
Gen 6
1.27 V
20 A
35 nC
116 W
TO-247-3
Industrial
Yes
CVFD20065A
650 V
20 A
Gen 5
1.35 V
20 A
62 nC
187.5 W
TO-220-2
Industrial
No
C3D20065D
650 V
20 A
Gen 3
1.5 V per leg
20 A
25 nC per leg
500 W
TO-247-3
Industrial
Yes
E3D20065D
650 V
20 A
Gen 3
1.5 V
20 A
110 nC
TO-247-3
Automotive
Yes
C3D30065D
650 V
30 A
Gen 3
1.5 V
30 A
44.5 nC per leg
300 W
TO-247-3
Industrial
Yes
E3D30065D
650 V
30 A
Gen 3
1.5 V
30 A
TO-247-3
Automotive
Yes
C5D50065D
650 V
50 A
Gen 5
1.5 V
50 A
110 nC
300 W
TO-247-3
Industrial
No
Features
  • Lowest forward voltage (Vf) drop over temperature in the industry
  • Zero reverse-recovery charge (Qrr) for ultra-fast switching operations
  • Robust MPS technology with high surge capability
  • High reverse-voltage blocking capability
  • Direct drop-in replacement for current silicon diodes and other silicon carbide diodes
Benefits
  • Improves System Efficiency with lower conduction loss
  • Enables high switching frequency operation
  • Improves System Level Power Density
  • Reduces System Size; Weight; and Cooling Requirements
Applications
  • Industrial Power Supplies
  • Server/Telecom
  • EV-Charging Systems
  • Energy Storage Systems (ESS)
  • Uninterruptible Power Supplies (UPS)
  • Battery Management Systems (BMS)
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Design Files
Technical Papers & Articles
by Zachary D. Schwartz and George E. Ponchak – A SiC Clapp oscillator fabricated on an alumina substrate with chip capacitors and spiral inductors is designed for high temperature operation at 1 GHz. The oscillator operated from 30 to 200 ºC with an output power of 21.8 dBm at 1 GHz and 200 ºC. The efficiency at 200 ºC is 15 %. The frequency variation over the temperature range is less than 0.5 %.
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