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European Microwave Week 2020

Virtual Exhibition January 12-14. On Demand through February 5

Powering More, Consuming Less. ™

Investing in tomorrow’s innovative RF solutions by partnering with the world’s designers to improve system size, weight and power.

Industry Workshops

An illustrated flow chart showcasing the differences between 5G and other cellular technologies.

Integrated Doherty PAs for Cellular and mmWave Applications

Jangheon Kim and Abdulrhman M. S. Ahmed
Sunday, January 10 | Time: TBD

In this workshop, we will discuss cellular infrastructure trends, 5G spectrum, and mMIMO power amplifier requirements. We will present the advantages and disadvantages of the discrete transistor versus the integrated mMIMO power amplifier approach. Details will also be provided about GaN Doherty power amplifier design topologies. Furthermore, Wolfspeed 5G mMIMO GaN on SiC integrated power amplifier examples are shown.

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A 2-d illustration showing DPD linearization that 5G will bring,

Digital Predistortion for 5G MIMO Wireless Transmitters

John Wood
Tuesday, January 12 | Time: TBD

In this workshop, we will discuss wireless infrastructure; where we are now and where we’re heading. We will detail some challenges with DPD linearization that 5G will bring; bandwidth, mMIMO, and TDD operation. Also, how the industry needs some DPD development to meet the linearity (and other performance) specifications as well as partnerships between industry sectors to make 5G a success.

Wolfspeed GaN on SiC for Aerospace & Defense

Our solutions enable smaller systems with lower system power consumption and lower costs.

GaN Foundry Services

Offering design assistance, proven processes, testing, and support for first pass design success

New! MMICs now available with Environmental Encapsulant and Scratch Coat (EE+SC) for improved robustness

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Wolfspeed RF GaN Foundry Services
Detailed circuitry image with a blue to purple gradient over the top of it.

How to Enable a Successful RF Broadband Design for a 500 – 3000 MHz Amplifier

Live January 14th at 12:00 EST | Today’s modern communications systems require amplifiers that meet a high level of performance over much broader frequency spectrums. This presentation will describe how thermal considerations can set performance thresholds for amplifiers, why broadband designs are difficult, and a methodical design flow to achieve a balanced performance across the target band.

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Knowledge Center

Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

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Primer on BLOS Troposcatter Communications

The latest troposcatter communication system requirements place substantial challenges on RF designers and suppliers, with simultaneous requisites for low weight, ruggedness, reliability, compact size, high bandwidth, excellent electrical performance, and efficiency. Fortunately, Wolfspeed has an innovative line of gallium nitride (GaN) high-electron-mobility transistor (HEMT) power amplifier (PA) solutions.

Why Wolfspeed?

GaN Expertise

We created the industry’s first GaN HEMT on Silicon Carbide and for the last 20 years have focused on investing in tomorrow’s innovative RF solutions by partnering with the world’s designers to improve system size, weight, and power.


As a pioneer in gallium nitride semiconductors, we now field a broad portfolio of the most capable next-generation, GaN on SiC based HEMTs (as packaged & bare die), MMIC power amplifiers, as well as LDMOS devices for all your RF system design needs.


We are the only vertically-integrated semiconductor manufacturer and control 100% of our GaN and SiC material supply. We doubled our production capacity in 2018, are on track to double capacity again by the end of 2020, and will continue to expand our capacity to meet the expected market growth by 2024.

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