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Cree Licenses GaN Power Patents to Nexperia

4/12/2018

Cree, Inc. announces that it signed a non-exclusive, worldwide, royalty-bearing patent license agreement with Nexperia BV, a Dutch company. The agreement provides Nexperia access to Cree’s extensive gallium nitride (GaN) power device patent portfolio, which includes over 300 issued U.S. and foreign patents that describe inventive aspects of high electron mobility transistor (HEMT) and GaN Schottky diode devices. The portfolio addresses novel device structures, materials and processing improvements, and packaging technology. The patent license involves no transfer of technology.


Cree Acquires Infineon RF Power Business

3/6/2018

Cree, Inc. (NASDAQ: CREE) has acquired assets of Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) Radio Frequency (RF) Power Business for approximately € 345 million. The transaction expands the Cree Wolfspeed business unit’s wireless market opportunity. Infineon continues to drive key growth areas such as electro-mobility, autonomous driving, renewables and technologies for a connected world. The transaction has closed and is effective today.


Cree, Inc. Announces Long-Term Silicon Carbide Wafer Supply Agreement with Infineon

2/26/2018

Cree, Inc. (Nasdaq: CREE) announces that it signed a strategic long-term agreement to produce and supply its Wolfspeed™ silicon carbide (SiC) wafers to Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY). The agreement governs Cree’s supply of advanced 150 mm SiC wafers to Infineon, which will broaden Infineon’s product offering to address today’s high-growth markets, such as photovoltaic inverters and electro mobility.


Wolfspeed's Next Generation GaN HEMTs Deliver Unmatched Efficiency

9/12/2017

Wolfspeed, A Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), has introduced a new series of 28V GaN HEMT RF power devices. These new devices are capable of higher frequency operation to 8GHz with increased efficiency and higher gain as well as best-in-class reliability. RF design engineers are now able to build more efficient broadband power amplifiers for commercial and military wireless communications and radar applications.


Wolfspeed Expands Industry-Leading, Third-Generation MOSFET Platform to 1200V

2/23/2017

Wolfspeed, a Cree Company and a leader in silicon carbide (SiC) power products, has expanded its innovative C3Mplatform through the introduction of a 1200V, 75mΩ MOSFET in its recently released low-inductance discrete packaging. The new device simplifies designs and enables an increase in frequency while maintaining efficiency, lowering system cost, reducing circuit EMI and enabling 99 percent efficiency levels in three-phase power factor correction circuits.


Wolfspeed Introduces New SiC MOSFET for EV Drive Trains

1/10/2017

Wolfspeed, a Cree Company and a leader in silicon carbide (SiC) power products, has introduced a 900V, 10mΩ MOSFET rated for 196 A of continuous drain current at a case temperature of 25°C. This device enables the reduction of EV drive-train inverter losses by 78 percent based on EPA combined city/highway mileage standards. This efficiency improvement offers designers new options in terms of range, battery usage and vehicle design.


Wolfspeed Wins 2016 R&D 100 Award

11/8/2016

Wolfspeed, A Cree Company, a leading global supplier of silicon carbide (SiC) power products - including best-in-class SiC MOSFETs, Schottky diodes, and modules - won a 2016 R&D 100 Award for its high temperature, wide bandgap (WBG) underhood inverter for electric vehicles.


Wolfspeed Delivers Industry's First 1000V SiC MOSFET

10/6/2016

Wolfspeed, a Cree Company and a leader in silicon carbide (SiC) power products, has introduced a 1000V MOSFET that enables a reduction in overall system cost, while improving system efficiency and decreasing system-size. The new MOSFET, specially optimized for fast charging and industrial power supplies, enables a 30 percent reduction in component-count while achieving more than 3x increase in power density and a 33 percent increase in output power.


Cree to Sell Wolfspeed to Infineon for $850 Million Cash

7/14/2016

Cree, Inc. (Nasdaq: CREE), a market leader in LED lighting, today announced execution of a definitive agreement to sell its Wolfspeed Power and RF division (“Wolfspeed”), which includes the silicon carbide substrate business for power, RF and gemstone applications, to Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) for $850 million in cash.  


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