SiC Materials

Optical-Grade Silicon Carbide

Wolfspeed TSiC™: Patented technology for unmatched transparency

Building on decades of SiC crystal-growth and wafer processing expertise, Wolfspeed has developed TSiC™ optical-grade SiC substrates. In July 2024, Wolfspeed TSiC was granted a U.S. Patent for its reduced optical absorption techniques, and has been continually enhanced to achieve best-in-class absorption coefficient, high thickness uniformity, and low optical roughness. TSiC’s commercial availability on a variety of wafer diameters offers an immediate path to higher performance and economies of scale for a variety of applications.

Ready to take the next step?

Let’s talk about how Wolfspeed TSiC™ can solve your system’s design challenges. Use the link below to connect directly with a materials team member for further product specifications or sample inquiries.

What you can expect

Commercially available

150 mm, 200 mm and sampling 300 mm

Precision flatness

Optical wafer geometry

Low red, green, blue (RGB) absorption

Across the visible spectrum

Key applications

Augmented reality (AR)

Augmented reality (AR) manufacturers are turning to optical-grade silicon carbide for its excellent refractive index and hardness for lenses that deliver a whole new perspective for users and will endure daily wear and tear. Additionally, SiC’s inherent thermal properties enable a reduction in embedded heat sinks, significantly reducing the weight of AR glasses.

Quantum computing

4H-SiC’s material properties are being explored across the quantum computing stack — as a cryogenic packaging substrate, a low-loss photonic platform, and a host for engineered spin-defect qubits — with potential applications in quantum sensing, communication, and computing.

Properties and specifications

Product Configuration

Parameter	Specification
Diameter	150 mm, 200 mm, 300 mm on request
Product Part Number	W4WPG0S-N-0200 (150 mm) W4WPH0S-N-0200 (200 mm)
Notch Depth / Orientation	1.0 mm / [1100]
Surface Orientation	on-axis
Crystaline Structure	4H
Surface Quality	Double-side polished (CMP both sides)

Optical & Dimensional Performance

Parameter	Target Specification
Thickness	500 µm ± 20µm
Absorption Coefficient (450 – 650nm)	≤ 0.05 cm^-1
TTV	≤ 1.5 µm (3 mm EE)
Optical Roughness (Sq)	≤ 1 nm both sides
Bow/Warp	+ 10 µm / < 20 µm