C4D08120E

1200 V, 8 A, TO-252-2 package, Industrial qualified, Discrete SiC Schottky Diode

Note Obsolete.

Image that includes both the front and back of the TO-252-2 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-252-2 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

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Product SKU	Buy Online	Request Sample	Data Sheet	Blocking Voltage	Current Rating	Generation	Forward Voltage(V_F(type))	Maximum Continuous Current (IF)	Total Capacitive Charge (Q_C (typ))	Total Power Dissipation (P_TOT)	Package	Qualification	Status
C4D08120E				1200 V	8 A	Gen 4	1.5 V	8 A	37 nC	137 W	TO-252-2	Industrial	Obsolete

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Documents

12 Documents Available

Document Type	Document Name	Last Updated
Data Sheets	C4D08120E	11/2024
Application Notes	PRD-05652: Mounting Recommendations and Thermal Measurement for Wolfspeed® SiC Power Devices in Through-Hole Packages	02/2025
Application Notes	PRD-08710: Measuring Stray Inductance in Power Electronics Systems	07/2024
Application Notes	PRD-05653: Recommended Solder Profiles for Power Products	09/2022
Application Notes	PRD-05641: Designing with Silicon Carbide in Energy Storage Applications	02/2022
Application Notes	Selection Guide of SiC Schottky Diode in CCM PFC Applications	09/2015
White Papers	Designed to Last, Even in the Harshest Environments New	11/2025
White Papers	Enhancing System Durability with Advanced Packaging for Silicon Carbide	11/2025
White Papers	SiC Power Module Reliability: Wolfspeed’s Power Cycling and Lifetime Modeling Approach New	11/2025
Product Catalog	Power Product Line Card	01/2025
Sales Terms	Wolfspeed, Inc. Sales Terms and Conditions	04/2025
Packing & Shipping	Power Product Packing & Shipping Reference Guide This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs.	11/2025

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SiC Power Module Reliability: Wolfspeed’s Power Cycling and Lifetime Modeling Approach

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Enhancing System Durability with Advanced Packaging for Silicon Carbide (SiC)

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