Features
- High power density footprint
- Ultra low mass (41 g)
- High junction temperature (175 °C) operation
- Implements Wolfspeed’s Third Generation SiC MOSFET Technology
Document Type | Document Name | Last Updated |
|---|---|---|
| User Guide | 03/2025 | |
| User Guide | 01/2025 | |
| User Guide | 12/2023 | |
| Application Notes | 10/2025 | |
| Application Notes | 05/2025 | |
| Application Notes | 03/2025 | |
| Application Notes | 02/2025 | |
| Application Notes | 01/2025 | |
| Application Notes | 01/2025 | |
| Application Notes | 01/2025 | |
| Application Notes | 07/2024 | |
| Application Notes | 07/2024 | |
| Application Notes | 01/2024 | |
| Application Notes | 01/2024 | |
| Application Notes | 01/2024 | |
| Application Notes | 12/2023 | |
| Application Notes | 11/2023 | |
| Application Notes | 08/2023 | |
| Application Notes | 01/2023 | |
| Application Notes | 02/2022 | |
| White Papers | 11/2025 | |
| White Papers | 11/2025 | |
| White Papers | 11/2025 | |
| Sales Terms | 04/2025 | |
| Product Catalog | 07/2026 |