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Image that includes both the front and back of the TO-252-2 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

E4D02120E

1200 V, 2 A, TO-252-2 package, Automotive qualified, Discrete SiC Schottky Diode
Note Obsolete.

Parametric Data

E4D02120E

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E4D02120E

Product SKU
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Data Sheet
Blocking Voltage
Current Rating
Generation
Forward Voltage(VF(type))
Maximum Continuous Current (IF)
Total Capacitive Charge (QC (typ))
Total Power Dissipation (PTOT)
Package
Qualification
E4D02120E
1200 V
2 A
Gen 4
1.4 V
2 A
16 nC
50 W
TO-252-2
Automotive

Documents, Tools & Support

Documents

Document Type
Document Name
Last Updated
Data Sheets
10/2023
Application Notes
07/2024
Application Notes
05/2023
Application Notes
09/2022
Application Notes
02/2022
Application Notes
09/2015
Product Catalog
05/2024
Sales Terms
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
04/2024
Sales Terms
12/2021
Technical SupportPower Applications Forum

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