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E4D02120E

1200 V, 2 A, TO-252-2 package, Automotive qualified, Discrete SiC Schottky Diode
Note Obsolete. Recommended replacement:C4D02120E
Image that includes both the front and back of the TO-252-2 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Parametric Data

E4D02120E

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E4D02120E

Product SKU
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Data Sheet
Blocking Voltage
Current Rating
Generation
Forward Voltage(VF(type))
Maximum Continuous Current (IF)
Total Capacitive Charge (QC (typ))
Total Power Dissipation (PTOT)
Package
Qualification
E4D02120E
1200 V
2 A
Gen 4
1.4 V
2 A
16 nC
50 W
TO-252-2
Automotive

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Documents, Tools & Support

Documents

Document Type
Document Name
Last Updated
Data Sheets10/2023
Application Notes02/2025
Application Notes07/2024
Application Notes09/2022
Application Notes02/2022
Application Notes09/2015
Product Catalog01/2025
Sales Terms
Power Product Packing & Shipping Reference Guide
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs.
03/2025
Sales Terms12/2021

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