采用顶部散热 (TSC) U2封装的13 kW高效率电机驱动逆变器

CRD-13DA12N-U2

本参考设计展示了如何使用碳化硅 (SiC) MOSFET来优化电动汽车辅助电机、暖通空调 (HVAC) 及其他类似应用中的电机驱动性能。该设计采用顶部散热 (TSC) U2封装，显著提高了系统级功率密度和效率，同时改善了热管理并增加了电路板布局的灵活性。碳化硅更高的导热性和在更高开关频率下更低的损耗，使得系统尺寸和冷却要求得以减小，压缩机运行更快，噪声、振动与声振粗糙度 (NVH) 更低。

本设计实现：

峰值效率达99%，满载效率达98.5%
宽输入直流母线电压范围
无传感器磁场定向闭环控制 (FOC)

规格：

输入电压：550 – 850 VDC
开关频率：10 – 32 kHz
最大RMS输出电压：420 V线电压 (VL-L)
输出功率：13 kW
短路保护
用于静态测试的开环模式
用于永磁同步电机 (PMSM) 的无传感器磁场定向控制 (FOC)
CAN接口至基于PC的用户界面

Wolfspeed Power Reference Design CRD-13DA12N-U2 13 kW High Efficiency Motor Drive

Wolfspeed Power Reference Design CRD-13DA12N-U2 13 kW High Efficiency Motor Drive

应用

电动汽车辅助电机
暖通空调 (HVAC)
工业电机驱动

包含内容

设计文件包括：

主功率板
控制板
辅助电源板

产品兼容

E3M0075120U2

Documents, Tools & Support

Block Diagram
技术和销售文档
工具 & 支持

Circuit block diagram of Wolfspeed Reference Design CRD-13DA12N-J2

Circuit block diagram of Wolfspeed Reference Design CRD-13DA12N-J2

Composite image of the top & bottom of Wolfspeed's Discrete Silicon Carbide (SiC) MOSFET in a TSC (U2) package.

Composite image of the top & bottom of Wolfspeed's Discrete Silicon Carbide (SiC) MOSFET in a TSC (U2) package.

E3M0075120U2

1200 V, 75 mΩ, TO-263-7 XL package, Automotive qualified, Discrete SiC MOSFET

Composite image of the top & bottom of Wolfspeed's Discrete Silicon Carbide (SiC) MOSFET in a TSC (U2) package.

Composite image of the top & bottom of Wolfspeed's Discrete Silicon Carbide (SiC) MOSFET in a TSC (U2) package.

E3M0075120U2

1200 V, 75 mΩ, TO-263-7 XL package, Automotive qualified, Discrete SiC MOSFET

Composite image of the top & bottom of Wolfspeed's Discrete Silicon Carbide (SiC) MOSFET in a TSC (U2) package.

Composite image of the top & bottom of Wolfspeed's Discrete Silicon Carbide (SiC) MOSFET in a TSC (U2) package.

E3M0075120U2

1200 V, 75 mΩ, TO-263-7 XL package, Automotive qualified, Discrete SiC MOSFET

Composite image of the top & bottom of Wolfspeed's Discrete Silicon Carbide (SiC) MOSFET in a TSC (U2) package.

Composite image of the top & bottom of Wolfspeed's Discrete Silicon Carbide (SiC) MOSFET in a TSC (U2) package.

E3M0075120U2

1200 V, 75 mΩ, TO-263-7 XL package, Automotive qualified, Discrete SiC MOSFET

Composite image of the top & bottom of Wolfspeed's Discrete Silicon Carbide (SiC) MOSFET in a TSC (U2) package.

Composite image of the top & bottom of Wolfspeed's Discrete Silicon Carbide (SiC) MOSFET in a TSC (U2) package.

E3M0075120U2

1200 V, 75 mΩ, TO-263-7 XL package, Automotive qualified, Discrete SiC MOSFET

Composite image of the top & bottom of Wolfspeed's Discrete Silicon Carbide (SiC) MOSFET in a TSC (U2) package.

Composite image of the top & bottom of Wolfspeed's Discrete Silicon Carbide (SiC) MOSFET in a TSC (U2) package.

E3M0075120U2

1200 V, 75 mΩ, TO-263-7 XL package, Automotive qualified, Discrete SiC MOSFET

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5A, High Voltage, Isolated Gate Driver with Internal Miller Clamp for Low-Side MOSFETs

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Ultra-low EMI transformer driver for isolated bias supplies

UCC25800-Q1

Ultra-low EMI transformer driver for isolated bias supplies

UCC21710QDWQ1

10A, High Voltage, Isolated Gate Driver With Short-Circuit Protection for High-Side MOSFETs

ACS733KLATR

1 MHz Bandwidth, Galvanically Isolated Current Sensor IC

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32-bit MCU with 100-MHz, FPU, TMU, 256-kb Flash, CLA, InstaSPIN-FOC, CLB, PGAs, SDFM

Knowledge Center

采用先进碳化硅封装技术有效提升系统耐久性

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专为持久耐用而设计，直面最严苛的环境

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通过Wolfspeed即将推出的新型顶部散热（TSC） MOSFET和肖特基二极管，优化热管理并节约能耗。

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