Features
- Easy to parallel and simple to drive
- Temperature-independent high-speed switching
- Enhanced reliability
- Maintains reliable performance during reverse power flow
The MOSFETs enable greater system efficiency and smaller, more power dense systems optimized for use in pulsed power, medium-voltage drives, solid-state transformers, smart grid/grid tie distributed generation, medium voltage UPS systems and nuclear power generation for AI data centers.
Product SKU | Request Sample | Data Sheet | Status | Blocking Voltage | RDS(ON) at 25°C | Current Rating | Gate Charge Total | Output Capacitance | Reverse Recovery Charge (Qrr) | Reverse Recovery Time (Trr) | Tjmax | Generation | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Active | 10000 V | 305 mΩ | 20 A | 268 nC | 76 pF | 2.91 µC | 186 ns | 175 °C | Gen 3 | Industrial |
Document Type | Document Name | Last Updated |
|---|---|---|
| Data Sheets | 02/2026 | |
| Application Notes | 05/2025 | |
| Application Notes | 01/2025 | |
| Application Notes | 11/2024 | |
| Application Notes | 11/2023 | |
| Application Notes | 01/2023 | |
| White Papers | 11/2025 | |
| White Papers | 11/2025 | |
| White Papers | 11/2025 | |
| Product Catalog | 01/2025 | |
| Sales Terms | 04/2025 |